GP3D012A065A

GP3D012A065A VDC QC IF Tj,max 650V SiC Schottky Diode Amp+ TM 650 V 35 nC 12 A 175 °C Package Features • Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ* • All parts tested to greater than 715V Amp+ TM Benefits • Near zero switching loss • Higher efficiency • Reduced heat sink requirements • Easy to parallel Amp+ TM Applications Part # Package Marking GP3D012A065A TO-220-2L 3D012A065 • Switch mode power supplies, UPS • Power factor correction • EV charging stations • Output rectification Maximum Ratings, at Tj=25 °C, unless otherwise specified Characteristics Continuous forward current Symbol IF** Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max i 2t value i 2dt Repetitive peak reverse voltage VRRM Diode dv/dt ruggedness dv/dt Power dissipation Ptot** Operating junction & storage temperature Soldering temperature Mounting torque Conditions TC=25 °C, Tj=175 °C 42 TC=125 °C, Tj=175 °C 22 Unit A TC=150 °C, Tj=175 °C 14 TC=25 °C, tp=8.3 ms 100 TC=110 °C, tp=8.3 ms 90 TC=25 °C, tp=10 μs 850 TC=25 °C, tp=8.3 ms 42 TC=110 °C, tp=8.3 ms 34 Tj=25 °C 650 V 200 V/ns 147 W -55…175 °C 260 °C 1 N-m Turn-on slew rate, repetitive TC=25 °C Tj, Tstorage Continuous Tsolder Values Wave soldering leads M3 Screw A A A2 s Notes: * EAS of 80 mJ is based on starting Tj = 25°C, L = 1.0 mH, IAS = 12.65 A, V = 50 V. ** Typical RthJC used Rev. 1.3, 8/6/2021 www.SemiQ.com p.1 650V SiC Schottky Diode GP3D012A065A Amp +TM Electrical Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol Values Conditions typ. max. - - V V DC blocking voltage VDC Tj=25 °C 650 Breakdown voltage VBR IR=396uA, Tj=25 °C VF Diode forward voltage Reverse current IR Total capacitive charge QC Total capacitance C Unit min. 715 - - IF=12A, Tj=25 °C - 1.38 1.50 IF=12A, Tj=125 °C - 1.47 - IF=12A, Tj=175 °C - 1.57 1.90 VR=650V, Tj=25 °C - 3 30 VR=715V, Tj=25 °C - 9 - VR=650V, Tj=125 °C - 18 - VR=650V, Tj=175 °C - 64 300 VR=400V, Tj=25 °C - 35 - VR=1V, f=1 MHz - 554 - VR=200V, f=1 MHz - 66 - VR=400V, f=1 MHz - 60 - V mA nC pF Thermal Characteristics Characteristics Thermal resistance, junction-case Symbol Conditions RthJC - Values min. typ. max. - 1.02 1.32 Unit o C/W Typical Performance 24 1.E-04 20 -55C -55C 25C 25C 75C 125C 125C 16 175C 175C IR (A) IF (A) 75C 1.E-05 12 1.E-06 8 1.E-07 4 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 0 VF (V) 200 300 400 500 600 VR (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.3, 8/6/2021 100 Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 650V SiC Schottky Diode 10,000 160 -55C 9,000 140 25C 8,000 75C 7,000 125C 120 175C 100 PTotal (W) 6,000 IR (µA) GP3D012A065A Amp +TM 5,000 4,000 80 60 3,000 40 2,000 20 1,000 Tj=175 oC 0 0 200 400 600 800 25 1,000 75 Fig. 3 Reverse Characteristics (parameterized on Tj) 175 Fig. 4 Power Derating 200 800 Duty cycle 180 100% Tj=25 oC 700 70% 50% 160 600 30% 140 20% 500 10% C (pF) 120 IF (A) 125 TC (oC) VR (V) 100 80 400 300 60 200 40 100 20 Tj=175 oC 0 25 45 65 0 85 105 125 145 1 165 Fig. 5 Current Derating Rev. 1.3, 8/6/2021 10 100 VR (V) TC (oC) Fig. 6 Capacitance www.SemiQ.com p.3 650V SiC Schottky Diode GP3D012A065A Amp +TM 60 16 Tj=25 oC Tj=25 oC 14 50 12 10 EC (μJ) QC (nC) 40 30 8 6 20 4 10 2 0 0 0 100 200 300 400 500 0 600 VR (V) 100 200 300 400 500 600 VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 1E-03 1E-06 Single Pulse 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.3, 8/6/2021 www.SemiQ.com p.4 650V SiC Schottky Diode GP3D012A065A Amp +TM Package Dimensions TO-220-2L Sym A A1 A2 b b2 c D D1 D2 E E1 e e1 H1 L L1 φP Q Rev. 1.3, 8/6/2021 www.SemiQ.com Millimeters Max Min 4.70 4.20 1.40 1.14 2.92 2.03 1.02 0.38 1.78 1.02 0.76 0.36 14.22 16.51 9.40 8.38 13.13 12.19 9.65 10.67 8.89 6.86 2.54 BSC 5.08 BSC 6.86 5.84 12.57 14.73 6.35 3.60 4.09 3.53 3.43 2.54 Inches Min Max 0.165 0.185 0.045 0.055 0.080 0.115 0.015 0.040 0.040 0.070 0.014 0.030 0.560 0.650 0.330 0.370 0.480 0.517 0.380 0.420 0.270 0.350 .100 BSC .200 BSC 0.230 0.270 0.495 0.580 0.142 0.250 0.139 0.161 0.100 0.135 p.5 650V SiC Schottky Diode Amp +TM GP3D012A065A Revision History Date 2/20/2020 Revision 1.0 1.1 1.2 8/6/2021 1.3 10/2/2019 12/20/2019 Notes Initial release of datasheet Company name and style change, updated Rthjc spec Using Rthjc typical for IF and Ptot Updated forward voltage spec, surge, Rthjc - valid for date codes after 2101 (YYWW format) Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Rev. 1.3, 8/6/2021 www.SemiQ.com p.6