BUJ105AB,118

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105AB Silicon Diffused Power Transistor Product specification October 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage VBE = 0 V Fall time PINNING - SOT404 PIN PIN CONFIGURATION DESCRIPTION 1 base 2 collector 3 emitter mb Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A; VCE = 5 V IC = 5 A; IB1 = 1 A collector TYP. MAX. UNIT 0.3 11 20 700 700 400 8 16 125 1.0 15 50 V V V A A W V ns MIN. MAX. UNIT -65 - 700 400 700 8 16 4 8 125 150 150 V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 55 - K/W SYMBOL mb 2 3 1 D2PAK (SOT404) LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Rth j-a Thermal resistance junction to ambient October 2018 CONDITIONS minimum footprint, FR4 board 1 Rev 1.100 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES,ICBO ICES Collector cut-off current ICEO IEBO VCEOsust Collector cut-off current Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VCEO = VCEOMmax (400V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 4.0 A;IB = 0.8 A IC = 4.0 A;IB = 0.8 A IC = 1 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 4.0 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 0.2 0.5 mA mA 400 - 0.1 1 - mA mA V 10 13 8 0.3 1.0 14 23 11 1.0 1.5 34 36 15 V V TYP. MAX. UNIT 0.65 1.8 0.3 1 2.5 0.5 µs µs µs 1.2 20 1.7 50 µs ns 1.4 25 1.9 100 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 5 A; IBon = -IBoff = 1 A; RL = 75 ohms; VBB2 = 4 V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 5 A; IBon = 1 A; LB = 1 µH; -VBB = 5 V ICon = 5 A; IBon = 1 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). October 2018 2 Rev 1.100 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. VCC IC / mA LC 250 IBon 100 LB T.U.T. 10 0 -VBB min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. VCC Fig.5. Test circuit inductive load. = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts tf t toff tp IB IBon T t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. October 2018 Fig.6. Switching times waveforms with inductive load. 3 Rev 1.100 WeEn Semiconductors Product specification Silicon Diffused Power Transistor 120 BUJ105AB Normalised Power Derating PD% VCEsat/V 110 2.0 100 90 1.6 80 IC=1A 70 2A 3A 4A 1.2 60 50 0.8 40 30 0.4 20 10 0 0 20 40 60 80 Tmb / C 100 120 0.0 0.01 140 0.10 1.00 10.00 IB/A Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. VBESAT/V 1.4 HFE 50 1.3 30 Tj=100C 1.2 20 25C 15 1.1 -40C 10 1 0.9 5 -40C 0.8 Tj=100C 25C 0.7 2 VCE=1V 0.6 0.01 0.05 0.1 0.3 IC/A 1 2 3 5 0.5 0.1 10 0.5 1 IC/A 2 5 10 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE HFE 50 VCESAT/V 0.6 30 0.5 Tj=100C Tj=100C 20 25C 0.4 15 -40C 0.3 10 25C 0.2 5 -40C VCE=5V 2 0.01 0.05 0.1 0.1 0.3 IC/A 1 2 3 5 0 0.2 10 Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE October 2018 0.4 0.6 1 IC/A 2 5 6 Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4. 4 Rev 1.100 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB 10 IC/A 11 Zth(j-mb) (K/W) 10 9 1 8 δ= 0.5 7 6 0.2 P 0.1 δ= tp T 5 -5V 10-1 4 -3V 0.02 0.05 3 t tp T Single pulse 2 -1V 1 10-2 10-4 10-1 10-2 10-3 1 tp (s) 10 0 0 Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter δ = tp/T 100 200 300 400 500 VCEclamp/V 600 700 800 Fig.15. Reverse bias safe operating area (Tj < Tjmax) for -VBE = 5V,3V & 1V. VCC LC VCL(RBSOAR) IBon -VBB PROBE POINT LB T.U.T. Fig.14. Test circuit for reverse bias safe operating area. Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V; LB = 1µH; LC = 200µH. October 2018 5 Rev 1.100 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB MECHANICAL DATA October 2018 6 Rev 1.100 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges whether or not such damages are based on tort (including negligence, warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. WeEn Semiconductors Translations — A non-English (translated version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.