PPM723T201E0

PPM723T201E0 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D（3） low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(Ω) ID(mA) 0.45@ VGS=-4.5V -20 0.62@ VGS=-2.5V G（1） -800 0.86@ VGS=-1.8V S（2） Absolute maximum rating@25℃ Parameter Symbol Value Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Continuous ID -800 Curren(TJ=150℃) Pulsed IDP -1200 Continuous IS -500 Pulsed ISP -1200 Total power dissipation PD 150 mW Channel temperature TCH 150 ℃ Range of storage temperature TSTG -55 to +150 ℃ Symbol Limits Units Rth(ch-a) 833 ℃/W mA Source current(Body diode) mA Thermal resistance Parameter Channel to ambient Rev.06.2 1 www.prisemi.com P-Channel MOSFET PPM723T201E0 Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Drain-Source Breakdown Voltage BVDSS ID =-1mA,VGS=0V -20 Zero Gate Voltage Drain Current IDSS VDS =-20V,VGS=0V - Gate-Body Leakage Current IGSS VDS =0V,VGS=±8V Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Max. Units - V - -1 μA - - ±10 μA VDS =-10V, ID =-100μA -0.5 - -1.1 V VGS=-4.5V, ID =-700mA - 0.45 0.7 Ω VGS=-2.5V, ID =-300mA - 0.62 0.85 Ω 0.86 1.2 Ω VGS=-1.8V, ID =-250mA Forward transfer admittance ︱Yfs︱ Input Capacitance CISS VDS=-10V, ID =-200mA VGS=0V, VDS =-10V, Typ. 0.3 s - 110 pF - 9 pF Output Capacitance COSS Reverse Transfer Capacitance CRSS - 5 pF Turn-On Delay Time td(on) - 5 ns Turn-Off Delay Time td(off) - 15 ns Turn-On Rise Time tr - 4 ns Turn-On Fall Time tf - 13 ns Total Gate Charge Qg VDD≒-10V , VGS =-4.5V, 1.4 nC Gate-Source Charge Qgs ID =-200mA 0.3 nC 0.3 nC Gate-Drain Charge Qgd Drain-Source Diode Forward Voltage VSD Rev.06.2 f=1MHz VDD≒-10V, VGS =-4.5V, RG=10Ω,RL≒100Ω ID =-100mA RG=10Ω,RL≒50Ω VGS=0V,IS=-200mA 2 - -1.2 V www.prisemi.com P-Channel MOSFET PPM723T201E0 Typical Characteristics 0.2 0.2 TA=25℃ Pulsed VGS=-10.0V VGS=-4.5V VGS=-3.2V VGS=-2.5V VGS=-2.0V VGS=-1.8V 0.1 VGS=-1.5V 0.05 0.15 Drain Current:ID(A) Drain Current: ID(A) 0.15 VGS=-2.5V VGS=-1.8V VGS=-1.5V 0.1 VGS=-1.2V 0.05 VGS=-1.2V VGS=-1.0V VGS=-1.0V 0 0.0 0.2 0.4 0.8 0.6 0 0.0 1.0 0.2 Drain-Source Voltage :VDS (V) Fig 1. Typical output characteristics(Ⅰ) 0.8 0.4 0.6 Drain-Source Voltage :VDS (V) 1.0 Fig 2. Typical output characteristics(Ⅱ) 10000 Static Drain-Source On-State Resistance: RDS(ON)(mΩ) 1 VDS=-10V Pulsed Drain current: ID (A) TA=25℃ Pulsed VGS=-4.5V 0.1 TA=125℃ TA=75℃ TA=25℃ TA=-25℃ 0.01 0.001 0.0001 0.1 1 0.5 Gate-Source Voltage :VGS (V) TA=25℃ Pulsed 1000 VGS=-1.2V VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 100 0.001 1.5 Fig 3. Typical transfer characteristics 0.1 0.01 Drain Current :ID (A) 1 Fig 4. Static drain-source on-state resistance vs. drain current(Ⅰ) 10000 VGS=-4.5V Pulsed Static Drain-Source On-State Resistance: RDS(ON)(mΩ) Static drain-source on-state resistance: RDS(ON) (mΩ) 10000 TA=125℃ TA=75℃ TA=25℃ TA=-25℃ 1000 100 0.001 0.01 0.1 Drain current :ID (A) TA=125℃ TA=75℃ TA=25℃ TA=-25℃ 1000 100 0.001 1 Fig 5. Static drain-source on-state resistance vs. 0.01 0.1 Drain Current :ID (A) 1 Fig 6. Static drain-source on-state resistance vs. drain current(Ⅱ) Rev.06.2 VGS=-2.5V Pulsed drain current(Ⅲ) 3 www.prisemi.com P-Channel MOSFET PPM723T201E0 1.0 10000 VDS=-10V Pulsed Forward transfer admittance:︱Yfs︱(S) Static drain-source on-state resistance: RDS(ON) (mΩ) VGS=-1.8V Pulsed TA=125℃ TA=75℃ TA=25℃ TA=-25℃ 1000 TA=125℃ TA=75℃ TA=25℃ TA=-25℃ 0.1 100 0.001 0.01 0.1 Drain current :ID (A) 0.01 1 Fig 7. Static drain-source on-state resistance vs. 0.1 Drain Current :ID (A) 1 Fig 8. Forward transfer admittance vs. drain current drain current(Ⅳ) 5 Static drain-source on-state resistance: RDS(ON) (Ω) 1 Reverse drain current: IS(A) VGS=0V Pulsed 0.1 TA=125℃ TA=75℃ TA=25℃ TA=-25℃ TA=25℃ Pulsed 4 ID=-0.2A 3 ID=-0.01A 2 1 0 0.01 0 0.5 1 Source-Drain Voltage:VSD (V) 0 1.5 Fig 9. Reverse drain current vs. source-drain voltage 2 4 6 8 Gate-source voltage : VGS (V) 10 Fig 10. Static drain-source on-state resistance vs. gate source voltage 1000 5 tf 100 4 Gate-source voltage: VGS(V) Switching time: t(ns) td(off) TA=25℃ VDD=-10V VGS=-4.5V RG=10Ω Pulsed 10 tr 1 0.01 2 TA=25℃ VDD=-10V ID=-0.2A RG=10Ω Pulsed 1 td(on) 0.1 0 1 Drain-current: ID(A) Fig 11. Switching characteristics Rev.06.2 3 0 1 0.5 Total gate charge: Qg (nC) 1.5 Fig 12. Dynamic input characteristics 4 www.prisemi.com P-Channel MOSFET PPM723T201E0 1000 Capacitance: C(pF) TA=25℃ f=1MHz VGS=0V CISS 100 COSS 10 CRSS 1 0.01 100 1 10 0.1 Drain-source voltage: VDS(V) Fig 13. Typical capacitance vs. drain-source voltage Measurement circuit Pulse width ID VDS VGS VGS 10% 50% 50% 90% RL D.U.T RG 10% 10% VDD 90% 90% VDS td(on) tr td(off) tf toff ton Fig.1-1 Switching time measurement circuit Fig.1-2 Switching time waveforms ID VG VDS VGS Qg RL IG(Const.) RG D.U.T VGS VDD Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Rev.06.2 Fig.2-2 Gate charge waveform 5 www.prisemi.com P-Channel MOSFET PPM723T201E0 Product dimension (SOT-723) Side View (0.11) 0.437±0.013 R0.1-R0.15 9°(4x) 1.2±0.03 0.4 （2） （1） （3） Unit：mm 0.2 Bottom View 1.2±0.025 0.8±0.025 0.25±0.05 0.6 0.6 0.6 0.65 0.4 0.8 1.0 Unit：mm Ordering information Device Package Shipping PPM723T201E0 SOT-723 (Pb-Free) 10000 / Tape & Reel Rev.06.2 6 www.prisemi.com P-Channel MOSFET PPM723T201E0 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 7 www.prisemi.com