CI30S120D3

36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI30S120D3 Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway (1) (2) (3) TO-247-3 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current (Per Leg/Device) 44/88 21.5/43 15/30 A TC=25˚C TC=135˚C TC=152˚C Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 68* 44* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 100* 85* A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 900* 750* A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Fig. 8 220/440 95/190 W TC=25˚C TC=110˚C Fig. 4 VR=0-960V Ptot Power Dissipation (Per Leg/Device) dV/dt Diode dV/dt ruggedness 200 V/ns ∫i2dt i2t value 50* 36* A2s TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-247 Mounting Torque * Value Per Leg, ** Per Device www.tokmas.com TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw 36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI30S120D3 Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note IF = 15 A TJ=25°C IF = 15 A TJ=175°C Fig. 1 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 77.5 nC VR = 800 V, IF = 15A di/dt = 200 A/μs TJ = 25°C Fig. 5 Total Capacitance 1200 70 50 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 22.1 μJ VR = 800 V Fig. 7 VF Forward Voltage 1.5 2.0 1.6 2.8 V IR Reverse Current 35 120 160 260 QC Total Capacitive Charge C EC Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.34** 0.68* °C/W Fig. 9 ** ** Per Device, * Per Leg Typical Performance (Per Leg) 2 30 TJ=-55°C TJ= 25°C T = 75°C J T =125°C TJ =175°C J 25 1.8 1.6 1.4 IR (mA) IF (A) 20 15 10 1.2 1 0.8 TJ=-55°C TJ= 25°C TJ= 75°C T =125°C 0.6 TJ =175°C J 0.4 5 0.2 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 200 VF (V) 400 600 800 1000 1200 1400 VR (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics www.tokmas.com 1600 1800 36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI30S120D3 Typical Performance (Per Leg) 240 160 220 140 200 IF(peak) (A) 120 100 Duty Duty Duty Duty Duty 180 160 PTot (W) 10% 20% 30% 50% 70% DC 80 60 140 120 100 80 40 60 40 20 20 0 25 50 75 100 125 150 0 175 25 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 3. Current Derating Figure 4. Power Derating 90 1400 80 1200 70 1000 50 C (pF) Qc (nC) 60 40 30 800 600 400 20 200 10 0 0 200 400 600 800 0 1000 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 1 10 100 VR (V) www.tokmas.com Figure 6. Capacitance vs. Reverse Voltage 1000 36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI30S120D3 Typical Performance 40 40.0 1000 1000 35 35.0 EC Capacitive Energy (uJ) C 30 30.0 (A) IFSMIFSM (A) E (mJ) 25 25.0 20 20.0 15 15.0 100 100 TJ = 25°C T = 110°C J 10.0 10 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Thermal Resistance Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Figure 7. Typical Capacitance Stored Energy, per leg Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform), per leg 0.5 100E-3 0.3 0.1 10E-3 0.05 0.02 0.01 SinglePulse 1E-3 100E-6 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Device Transient Thermal Impedance www.tokmas.com 100E-3 1 36002dc8-79707dfb-44420c97-fd56264f SiC Schottky Barrier Diode CI30S120D3 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS Inches Millimeters Min Max Min A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 N NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai www.tokmas.com Max 3 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF