HSBA4204

HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4204 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA4204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS 40 V RDS(ON),typ 11.5 mΩ ID 30 A PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM EAS ±20 V Continuous Drain Current, VGS @ 10V1 30 A Continuous Drain Current, VGS @ 10V1 20 A 100 A 31 mJ Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current 25 A PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJC www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-ambient (Steady State)1 --- 62.5 ℃/W Thermal Resistance Junction-Case1 --- 6 ℃/W Ver 2.0 1 HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=6A --- 11.5 15 VGS=4.5V , ID=3A --- 15 20 1.0 --- 2.5 V --- -5.64 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 31 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 ---  Qg Total Gate Charge (4.5V) --- 10.7 --- --- 3.3 --- VDS=20V , VGS=4.5V , ID=6A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.2 --- Td(on) Turn-On Delay Time --- 8.6 --- nC Rise Time VDD=12V , VGS=10V , RG=3.3 --- 3.4 --- Turn-Off Delay Time ID=6A --- 25 --- Fall Time --- 2.2 --- Ciss Input Capacitance --- 1314 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 30 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Typical Characteristics 22 12 ID=6A VGS=10V 10 VGS=5V 8 18 RDSON (mΩ) ID Drain Current (A) VGS=7V VGS=4.5V 6 VGS=3V 14 4 2 10 0 0 0.25 0.5 0.75 2 1 VDS , Drain-to-Source Voltage (V) 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 6 10 VGS , Gate to Source Voltage (V) IS Source Current(A) VDS=20V 4 TJ=150℃ TJ=25℃ 2 0 0.00 0.25 0.50 0.75 ID=6A 8 6 4 2 0 1.00 0 VSD , Source-to-Drain Voltage (V) 15 20 25 Fig.4 Gate-Charge Characteristics diode Normalized On Resistance 1.8 1.4 Normalized VGS(th) 10 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse 1.8 5 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSBA4204 Dual N-Ch 40V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform waveform www.hs-semi.cn Ver 2.0 4