1N4006W

山东晶导微电子股份有限公司 1N4001W THRU 1N4007W Jingdao Microelectronics co.LTD Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES ▪For surface mounted applications ▪Low profile package ▪Glass Passivated Chip Junction ▪Ideal for automated placement ▪Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code： A1-A7 Simplified outline SOD-123FL and symbol MECHANICAL DATA ▪Case: SOD-123FL ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪Approx. Weight: 15mg / 0.00053oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols 1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 8(TYP.) pF RθJA 90 °C/W T j , T stg -55 ~ +150 °C Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SOD123FL-A-1N4001W~1N4007W-1A1KV Page 1 of 3 山东晶导微电子股份有限公司 1N4001W THRU 1N4007W Jingdao Microelectronics co.LTD Fig.2 Typical Instaneous Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current ( μ A) Fig.1 Forward Current Derating Curve 100 T J=150°C T J=125°C 10 1.0 T J=75°C 0.1 T J =25°C 1N4007W 0.01 0 Junction Capacitance ( pF) TJ = 2 5° C TJ = 10 15 0°C 0°C 0.5 TJ = Instaneous Forward Current (A) 1.0 0.9 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.8 600 Instaneous Reverse Voltage (V) Case Temperature (°C) 0.2 0.1 0.5 400 200 100 T J=25°C 10 1 0.6 0.7 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2016.01 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 1N4001W THRU 1N4007W Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE 7° The recommended mounting pad size Marking Type number 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2016.01 ∠ JD512184B2 Marking code 1N4001W A1 1N4002W A2 1N4003W A3 1N4004W A4 1N4005W A5 1N4006W A6 1N4007W A7 Page 3 of 3