ME4435

* ME4435/ME4435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4435 is the P-Channel logic enhancement mode power field ● RDS(ON)≦20mΩ@VGS=-10V effect transistors are produced using high cell density , DMOS trench ● RDS(ON)≦35mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low R DS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits APPLICATIONS where high-side switching and low in-line power loss are needed in a ● Power Management in Note book ● Portable Equipment very small outline surface mount package. ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter PIN CONFIGURATION (SOP-8) Top View The Ordering Information: ME4435 (Pb-free) ME4435-G (Green product-Halogen free ) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Parameter TA=25℃ Continuous Drain Current -8.8 ID TA=70℃ Pulsed Drain Current IDM TA=25℃ Maximum Power Dissipation A -7.1 -35 2.5 PD TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* A W 1.6 TJ -55 to 150 ℃ RθJA 50 ℃/W 2 *The device mounted on 1in FR4 board with 2 oz copper DCC 正式發行 Jun,2012-Ver4.5 01 ME4435/ME4435-G P-Channel 30V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.4 -3 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V -1 μA ID(ON) On-State Drain Current RDS(ON) Drain-Source On-State Resistance STATIC VSD a Diode Forward Voltage VDS=-5V, VGS= -10V a -30 A VGS=-10V, ID= -9.1A 15 20 VGS=-4.5V, ID= -6.9A 25 35 -0.8 -1.2 IS=-2.1A, VGS=0V mΩ V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Notes: 38 VDS=-15V, VGS=-10V, ID=-9.1A 7.7 nC 9 VGS=0V, VDS=0V, f=1MHZ Ω 6.9 1490 VDS=-15V, VGS=0V, f=1MHz 209 pF 148 VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V RG=6Ω 38.2 16.7 ns 106 24.1 a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Jun,2012-Ver4.5 02 ME4435/ME4435-G P-Channel 30V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Jun,2012-Ver4.5 03 ME4435/ME4435-G P-Channel 30V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Jun,2012-Ver4.5 04 ME4435/ME4435-G P-Channel 30V (D-S) MOSFET SOP-8 Package Outline MILLIMETERS (mm) DIM MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 L 0.40 1.25 θ 0° 7° * The NNote: 1. Refer to JEDEC MS-012AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs . Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side. , 2. Jun,2012-Ver4.5 DCC 正式發行 05