WPM6207-3/TR

WPM6207 WPM6207 Single P-Channel, -20V, -5.7A, Power MOSFET VDS (V) www.sh-willsemi.com Max Rds(on) (mΩ) 32@ VGS=–4.5V -20 40@ VGS=–2.5V 60@ VGS=–1.8V Descriptions SOT-23-3 The WPM6207 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM6207 is Pb-free. Pin configuration (Top view) 3 Features PBYW ⚫ Trench Technology ⚫ Supper high density cell design ⚫ Excellent ON resistance for higher DC current ⚫ Extremely Low Threshold Voltage ⚫ Small package SOT-23-3 1 2 PB= Specific Device Code Y = Year W= Week Marking Order information Applications ⚫ Power Management in Notebook Computer ⚫ Portable Equipment ⚫ Battery Powered Systems Will Semiconductor Ltd. Device Package Shipping WPM6207-3/TR SOT-23-3 3000/Reel&Tape 1 Mar, 2019 - Rev.1.1 WPM6207 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -6.4 -5.7 -5.1 -4.6 1.5 1.2 1 0.8 -5.5 -4.8 -4.4 -3.9 1.1 0.8 0.7 0.5 A W A W Pulsed Drain Current c IDM -20 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State Typical Maximum 65 80 85 100 90 110 115 140 40 60 RθJA RθJA RθJC a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width