AP15N10

AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application • 100V, 14.6A • Synchronous buck converter applications. • RDS(ON) =100mΩ (max.) @ VGS = 10V, ID = 5A • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • RoHS Compliant & Halogen-Free Package TO-252 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Max. Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 20 V ID Continuous Drain Current, VGS @ 10Vnonote1,6 TC = 25℃ 14.6 A TC = 100℃ 10 A 25 A 30 W 0.8 mJ 3 ℃/W -55 to +150 ℃ IDM PD EAS Pulsed Drain Current Power Dissipation note2 note4 Single Pulsed Avalanche Energy TC = 25℃ note3 note1 RθJA Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range All Power Semiconductor co.,Ltd 1 v1.0 AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET Electrical Characteristics TC=25℃ unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units VGS = 0V,ID = 250μA 100 - - V VDS = 80V, VGS = 0V - - 10 μA VDS = 80V, TC = 55℃ - - 100 μA VDS = 0V, VGS = ±20V - - ±100 nA VDS = VGS, ID = 250μA 1.2 - 2.9 V VGS = 10V, ID =5A - - 100 mΩ VGS = 4.5V, ID =3A - - 110 mΩ VDS = 5V, ID =5A - 14 - S - 450 - pF - 55 - pF - 16 - pF - 11.9 - nC - 2.8 - nC - 1.7 - nC - 3.8 - ns Off Characteristic BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate to Body Leakage Current On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance note2 gFS Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 15V, VGS = 0V, f = 1.0MHz VDs =50V, ID =5A, VGS = 10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 50V, ID =5A, - 25.8 - ns td(off) Turn-Off Delay Time RG = 3.3Ω, VGS = 10V - 16 - ns tf Turn-Off Fall Time - 8.8 - ns - - 14.6 A - - 25 A - - 1.2 V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current note1,5 ISM Maximum Pulsed Drain to Source Diode Forward Current VSD note2 Drain to Source Diode Forward Voltage note2,5 VGS = 0V, IS = 1A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current is 85A. All Power Semiconductor co.,Ltd 2 v1.0 AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. On Resistance vs. Gate-Source Voltage Figure 3. Body Diode Forward Voltage vs. Figure 4. Gate Charge Characteristics Source Current and Temperature Figure 6. Normalized Threshold Voltage vs. Figure 5. Capacitance Characteristics All Power Semiconductor co.,Ltd Junction Temperature 3 v1.0 AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET Figure 7. N Normalized On Resistance vs. Figure 8. Maximum Safe Operating Area Junction Temperature Figure 9. Effective Transient Thermal Impedance All Power Semiconductor co.,Ltd 4 v1.0 AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET Figure 10. Gate Charge Test Circuit & Waveform Figure 11. Resistive Switching Test Circuit & Waveforms Figure 12. Unclamped Inductive Switching Test Circuit & Waveforms All Power Semiconductor co.,Ltd 5 v1.0 AP15N10 DATA SHEET N-Channel Enhancement Mode Power MOSFET Figure 13. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) . All Power Semiconductor co.,Ltd 6 v1.0