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PSBD1DF20V3H

PSBD1DF20V3H

  • 厂商:

    PRISEMI(上海芯导电子)

  • 封装:

    SOD123F

  • 描述:

    PSBD1DF20V3H

  • 详情介绍
  • 数据手册
  • 价格&库存
PSBD1DF20V3H 数据手册
PSBD1DF20V3H THRW PSBD1DF200V3H Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V 2 1 Forward Current 3.0 A SOD123-FL Maximum Ratings and Electrical characteristics per line@25℃( unless otherwise specified) Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 % Parameter Symbols 20V3H 40V3H 60V3H 80V3H 100V3H 120V3H 150V3H 200V3H Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 80 100 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current at Ta = 65 ℃ IF(AV) 3.0 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load IFSM 80 70 A (JEDEC Method) Maximum Instantaneous Forward Voltage at VF 0.55 0.70 0.85 0.95 V 1A Maximum DC Reverse Current Ta = 25 ℃ at Rated DC Blocking Voltage Ta =125 ℃ IR 0.5 0.3 10 5 250 160 mA Typical Junction Capacitance 1 Cj Typical Thermal Resistance 2 RθJA 115 ℃/W Operating and Storage Temperature Range Tj,Tstg -55~+150 ℃ ) ) pF 1)Measured at 1 MHz and applied reverse voltage of 4 V D.C 2)Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted Rev.06.2 1 www.prisemi.com PSBD1DF20V3H THRW PSBD1DF200V3H Instaneous Reverse Current ( μA) Switching Diode Average Forward Current (A) 3.5 100LFM 3.0 2.5 2.0 1.5 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.5 0.0 25 50 75 100 125 150 10 4 T J =75°C 10 2 20V1H/40V3H 60V1H/200V3H 10 1 T J =25°C 10 0 100 80 Fig.2 Typical Reverse Characteristics 500 Junction Capacitance ( pF) 20 10 1.0 20V1H/40V3H 60V1H/80V3H 100V1H/120V3H 150V1H/200V3H 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 20V1H/40V3H 60V1H/200V3H 20 10 1.8 Fig.4 Typical Junction Capacitance Transient Thermal Impedance( °C /W) 8.3 ms Single Half Sine Wave (JEDEC Method) 80 60 20V1H/60V3H 100V1H/120V3H 40 20 00 1 10 100 10 Reverse Voltage (V) Fig.3 Typical Forward Characteristic 100 1 0.1 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 60 Percent of Rated Peak Reverse Voltage(%) Fig.1 Forward Current Derating Curve 100 Number of Cycles at 60Hz 200 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Rev.06.2 40 20 0 Ambient Temperature (°C) Instaneous Forward Current (A) T J =100°C 10 3 Fig.6- Typical Transient Thermal Impedance 2 www.prisemi.com Switching Diode PSBD1DF20V3H THRW PSBD1DF200V3H Product dimension (SOD-123FL) ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE ∠ 7° The recommended mounting pad size 2.0 (79) 1.2 (47) 1.2 (47) 1.2 (47) Unit: mm (mil) Rev.06.2 3 www.prisemi.com Switching Diode PSBD1DF20V3H THRW PSBD1DF200V3H • Recommended condition of flow soldering Preliminary Heating 300 Soldering Cooling (in air) Temperature of Soldering (°C) 265°C 250 245°C 200 150 120°C 100 100°C 50 0 2 to 5 min more than 1 min less than 10s • Recommended condition of reflow soldering Temperature of Soldering (°C) 300 Peak Temperature 245 to 260°C, 10s max. 250 Reflow Heating Rate 1 to 5°C / s 200 150 100 50 0 Pre Heating Rate 1 to 5°C / s Preliminary Heating 130 to 170°C, 50 to 120s Soldering 230°C 20 to 30s Cooling more than 60s 2 times max. Recommended peak temperature is over 245 °C. If peak temperature is below 245 °C, you may adjust the following parameters; time length of peak temperature (longer), time length of soldering (longer), thickness of solder paste (thicker) • Condition of hand soldering Temperature: 370°C Time: 3s max. Times: one time • Remark: Lead free solder paste (96.5Sn/3.0Ag/0.5Cu) Rev.06.2 4 www.prisemi.com Switching Diode PSBD1DF20V3H THRW PSBD1DF200V3H IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 5 www.prisemi.com
PSBD1DF20V3H
物料型号:PSBD1DF20V3H THRW PSBD1DF200V3H

器件简介:文档描述的是一种表面安装肖特基势垒整流器(Switching Diode),用于开关电源中。

引脚分配:文档中未明确提供引脚分配信息,但根据SOD123-FL封装的典型布局,可以推断出有两个引脚,一个阳极(Anode)和一个阴极(Cathode)。

参数特性: - 最大重复峰值反向电压(VRRM):20V至200V - 最大有效值电压(VRMS):14V至140V - 最大直流阻断电压(Voc):与VRRM相同 - 最大平均正向整流电流在65°C(IF(AV)):3.0A - 峰值正向浪涌电流8.3毫秒单半正弦波(IFSM):80A至70A - 最大正向瞬态电压在1A(VF):0.55V至0.95V - 最大直流反向电流在25°C(IR):0.5mA至5mA - 典型结电容(C):250pF至160pF - 典型热阻(RaJA):115°C/W - 工作和存储温度范围(T.Tsg):-55°C至+150°C

功能详解:文档提供了正向电流降额曲线、典型反向特性、典型正向特性、典型结电容和最大非重复峰值正向浪涌电流等图表,用于展示器件在不同条件下的性能。

应用信息:适用于单相半波60Hz、阻性或感性负载的开关电源中,对于电容性负载,电流需降额20%。

封装信息:SOD123-FL封装,文档提供了封装的尺寸和推荐的安装焊盘尺寸。
PSBD1DF20V3H 价格&库存

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