FDN340P

UMW R UMW FDN340P SOT-23 Plastic-Encapsulate MOSFETS FDN340P P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 70mΩ@ -4.5V -20 V -2A 110mΩ@ -2.5V 210mΩ@ -1.8V FEATURE APPLICATION ※ Battery protection ※ Load switch ● TrenchFET Power MOSFET ● Supper high density cell design ※ Battery management MARKING Equivalent Circuit SOT–23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 ID -2 Pulsed Diode Curren IDM -10 Power Dissipation PD 1.1 W RθJA 250 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Thermal Resistance from Junction to Ambient (t≤10s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A 友台半导体有限公司 UMW R UMW FDN340P SOT-23 Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = -250µA VGS(th) VDS =VGS, ID = -250µA Gate-source leakage IGSS Zero gate voltage drain current IDSS Gate-source threshold voltage Drain-source on-state resistancea RDS(on) -20 V -0.4 -1.5 V VDS =0V, VGS = ±8V ±100 nA VDS = -16V, VGS =0V -1 µA VGS = -4.5V, ID = -2A 52 70 mΩ VGS = -2.5V, ID = -1.7A 78 110 mΩ 210 mΩ VGS = -1.8V, ID = -1.2A Forward transconductancea Diode forward voltage gfs VDS = -4.5V, ID = -2A 8 VSD IS= -1A,VGS=0V -0.8 S -1.2 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = -10V,VGS =0V, f=1MHz VDS = -10V,VGS = -4.5V, ID = -2A Rg f=1MHz 600 pF 175 pF 80 pF 8 nC 1.3 nC 2.2 nC 0.5 3.2 Ω Switchingbtr Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDS= -10V RL=3.5Ω, ID ≈ -1A, VGEN= -4.5V,Rg=3Ω tf 6 ns 9 ns 31 ns 26 ns Drain-source body diode characteristicstr Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25℃ ISM -1.2 A -10 A Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 10 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com UMW FDN340P SOT-23 Plastic-Encapsulate MOSFETS 3 友台半导体有限公司