PESDU0781D1F

PESDU0781D1F 1-Line Bi-directional TVS Diode Description Mechanical Characteristics The PESDU0781D1F is an bi-directional TVS diode,  Package: SOD-123FL utilizing leading monolithic silicon technology to provide  Lead Finish: Matte Tin fast response time and low ESD clamping voltage,  Case Material: “Green” Molding Compound. making this device an ideal solution for protecting  Moisture Sensitivity: Level 3 per J-STD-020 voltage The  Terminal Connections: See Diagram Below PESDU0781D1F complies with the IEC 61000-4-2  Marking Information: See Below sensitive data and power lines. (ESD) with ± 30kV air and ± 30kV contact discharge. It is assembled into a SOD-123FL lead-free package. The Applications small size and high ESD/surge protection make  Fast-charge battery chargers PESDU0781D1F an ideal choice to protect cell phone,  Power management system digital cameras, audio players and many other portable  Cellular Handsets and Accessories applications.  Personal Digital Assistants  Notebooks and Handhelds  Portable Instrumentation Features  Protects one data or power line  Digital Cameras  Ultra low leakage: nA level  Peripherals  Low operating voltage: 7V  Ultra low clamping voltage  Complies with following standards: Marking Information – IEC 61000-4-2 (ESD)immunity test 7CA. Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 200A (8/20μs)  7CA. = Device Marking Code RoHS Compliant Pin Configuration Ordering Information Part Number Packaging PESDU0781D1F 3000/Tape & Reel Real Size 7 inch Circuit and Pin Schematic Rev.02.1806 Copyright © 2014 PN-Silicon Co., Ltd www.pn-silicon.com 1/4 PESDU0781D1F Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20μs) PPK 5000 W Peak Pulse Current (8/20μs) IPP 200 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Reverse Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 7 V 7.5 Test Condition IT = 1mA Reverse Leakage Current IR 5 μA VRWM = 7V Clamping Voltage VC 9 V IPP = 5A (8 x 20μs pulse) ESD Clamping Voltage VC 20 Junction Capacitance CJ 400 Rev.02.1806 Copyright © 2014 PN-Silicon Co., Ltd IPP = 200A (8 x 20μs pulse) 25 pF VR = 0V, f = 1MHz www.pn-silicon.com 2/4 PESDU0781D1F Typical Performance Characteristics (TA=25°C unless otherwise Specified) 1000 480 Peak Power_Ppp(kW) Junction Capacitance_Cj (pF) 560 400 320 240 160 10 80 1 0 0 1 2 3 4 5 6 7 0.1 1 10 100 Reverse Voltage_VR(V) Pulse Duration_tp(uS) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time 24 120 21 100 % of Rated Power Clamping Voltage_Vc（V） 100 18 15 12 9 6 80 60 40 20 3 0 0 0 30 60 90 120 150 180 0 210 20 50 75 100 125 Peak Pulse Current_Ipp (A) Ambient Temperature_Ta(℃) Clamping Voltage vs. Peak Pulse Current Power Derating Curve 150 % of Peak Pulse Current 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 CH1 30 5.0V M 10.0ns Time_t(μS) ESD Clamping Voltage 8 X 20uS Pulse Waveform 8 kV Contact per IEC61000−4−2 Rev.02.1806 Copyright © 2014 PN-Silicon Co., Ltd www.pn-silicon.com 3/4 PESDU0781D1F SOD-123FL Package Outline Drawing Millimeters C B DIM A D E Min Nom Max A 2.70 2.80 2.90 B 1.80 1.90 2.00 C 0.80 1.00 1.20 D 1.40 E 0.10 0.20 0.30 H 0.35 0.85 K 3.50 3.90 K Suggested Land Pattern DIMENSIONS A SYM B MILLIMETERS INCHES A 4.19 0.165 B 1.20 0.048 C 0.90 0.036 C Rev.02.1806 Copyright © 2014 PN-Silicon Co., Ltd www.pn-silicon.com 4/4