AO3400-SOT23

AO3400 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance D D SOT-23 G G S A B C D E Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 F 0.45 REF. 0.55 REF. S Millimeter G H K J L Min. 1.80 0.90 0.10 0.35 0.92 Max. 2.00 1.1 0.20 0.70 0.98 M 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current ID 5.8 Pulsed Drain Current IDM 30 Unit V A TA = 25oC Maximum Power Dissipation o 1.4 PD TA = 75 C Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) - 1- W 1 TJ, Tstg -55 to 150 RθJA 145 o o C C/W 2015-5-7 AO3400 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Test Condition Symbol Min. Typ. Miax. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 30 V Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 5.8A 25.0 28.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID =5A 30.0 33.0 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID =4A 40.0 52.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V Forward Transconductance gfs VDS = 5V, ID = 5A 10 15 Gate Resistance Rg F=1.0MHz 6 7 0.7 mΩ 1.4 V 1 uA ±100 nA S 7.5 Ω Dynamic Total Gate Charge Qg 11 VDS = 15V, ID = 5.8A Gate-Source Charge Qgs nC 1.6 VGS = 4.5V Gate-Drain Charge Qgd Turn-On Delay Time td(on) 2.8 7 VDD = 15V, RL=2.7Ω Turn-On Rise Time tr 15 ns ID = 1A, VGEN = 10V Turn-Off Delay Time td(off) 38 RG = 3Ω Turn-Off Fall Time tf Input Capacitance Ciss 3 340 VDS = 10V, VGS = 0V Output Capacitance Coss pF 115 f = 1.0 MHz Reverse Transfer Capacitance Crss 33 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.6A, VGS = 0V 1.6 A 1.2 V Note: Pulse test: pulse width