8050D

8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 800 mA Base Current IB 100 mA Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Power Dissipation Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 70 120 160 300 60 - 120 200 300 380 - - ICBO - - 100 nA V(BR)CBO 40 - - V V(BR)CEO 25 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V fT - 100 - MHz Cob - 12 - pF Current Gain Group B C D E at VCE = 1 V, IC = 350 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated : 01/07/2016 Rev:02 8050 Admissible power dissipation versus ambient temperature DC current gain versus collector current Collector current versus base emitter voltage Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case W 1 1000 mA 3 10 25 C 5 500 400 o -50 C 10 2 o 150 C 300 2 0.8 V CE =1V 700 o 150 oC 200 h FE Ta 5 P tot IC 0.6 -50 o C 70 10 50 40 5 0.4 oC =25 100 typical limits at Tamb=25o C 2 mb 30 2 20 1 0.2 5 10 10 -1 2 10 2 10 1 10 -1 0 0 0 o 200 C 100 10 3 IC 1 2V Tamb VBE C o llector satu ration vo ltage versus collector current Base saturation voltage versus collector current V 0.5 Ic IB mA 500 V 2 typical lim its at Tam b =25o C 0.4 Com m on em itter collector characteristics 3.2 typical lim its at Tam b=25o C =10 Ic IB 2.8 2.4 400 2 =10 1.8 V BE sat V C E sat 1.6 0.3 300 IC 1.4 1.2 1 o 1 -50 C 0.2 25 oC 200 0.8 100 0.4 0.6 o o 150 C 25 C 0.1 o 150 C o -50 C I B = 0.2m A 0 0 10 -1 1 10 10 2 0 10 -1 10 3 m A 10 2 10 1 IC Common emitter collector characteristics 1 0 2V V CE Gain bandwidth product versus collector current Common emitter collector characteristics mA 100 mA 500 MHz 10 3 0.9 0.85 0.35 o Tamb=25 C f=20MHz 7 5 80 4 400 0.3 IC 10 3 mA IC 3 0.25 60 IC fT 300 0.2 40 0.15 0.8 2 VCE=5V 1V 10 2 7 200 5 4 0.1 20 100 0.75 3 2 I B =0.05mA V BE =0.7V 0 0 0 10 20V V CE 0 1 2V V CE 10 1 2 5 10 2 5 10 2 2 5 10 3 mA IC SEMTECH ELECTRONICS LTD. ® Dated : 01/07/2016 Rev:02