0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
GD25Q256EYIGR

GD25Q256EYIGR

  • 厂商:

    GIGADEVICE(兆易创新)

  • 封装:

    WSON8_6X8MM_EP

  • 描述:

    FLASH存储器 256Mb SPI 133MHz WSON8_6X8MM_EP

  • 数据手册
  • 价格&库存
GD25Q256EYIGR 数据手册
Uniform Sector Dual and Quad Serial Flash GD25Q256E DATASHEET 1 GD25Q256E Uniform Sector Dual and Quad Serial Flash GD25Q256E Contents 1 FEATURES .........................................................................................................................................................4 2 GENERAL DESCRIPTIONS .............................................................................................................................5 3 MEMORY ORGANIZATION ...............................................................................................................................8 4 DEVICE OPERATIONS......................................................................................................................................9 4.1 SPI MODE .............................................................................................................................................................. 9 4.2 HOLD FUNCTION ..................................................................................................................................................... 9 4.3 RESET FUNCTION .................................................................................................................................................. 10 5 DATA PROTECTION ........................................................................................................................................ 11 6 REGISTERS...................................................................................................................................................... 12 7 6.1 STATUS REGISTER ................................................................................................................................................... 12 6.2 EXTENDED ADDRESS REGISTER .................................................................................................................................. 16 COMMAND DESCRIPTIONS .......................................................................................................................... 17 7.1 WRITE ENABLE (WREN) (06H) ................................................................................................................................ 22 7.2 WRITE DISABLE (WRDI) (04H) ................................................................................................................................ 22 7.3 READ STATUS REGISTER (RDSR) (05H OR 35H OR 15H) .............................................................................................. 22 7.4 WRITE STATUS REGISTER (WRSR) (01H OR 31H OR 11H) ........................................................................................... 23 7.5 READ EXTENDED ADDRESS REGISTER (C8H) ................................................................................................................ 23 7.6 WRITE EXTENDED ADDRESS REGISTER (C5H)............................................................................................................... 24 7.7 WRITE ENABLE FOR VOLATILE STATUS REGISTER (50H) ................................................................................................. 24 7.8 READ DATA BYTES (03H/13H) ................................................................................................................................ 25 7.9 READ DATA BYTES AT HIGHER SPEED (0BH/0CH) ........................................................................................................ 25 7.10 DUAL OUTPUT FAST READ (3BH/3CH) ...................................................................................................................... 26 7.11 QUAD OUTPUT FAST READ (6BH/6CH) ..................................................................................................................... 26 7.12 DUAL I/O FAST READ (BBH/BCH) ............................................................................................................................ 27 7.13 QUAD I/O FAST READ (EBH/ECH) ........................................................................................................................... 28 7.14 SET BURST WITH WRAP (77H) ................................................................................................................................. 30 7.15 PAGE PROGRAM (PP 02H OR 4PP 12H) .................................................................................................................... 30 7.16 QUAD PAGE PROGRAM (32H/34H) .......................................................................................................................... 31 7.17 SECTOR ERASE (SE 20H OR 4SE 21H) ....................................................................................................................... 32 7.18 32KB BLOCK ERASE (BE32 52H OR 4BE32 5CH) ....................................................................................................... 32 7.19 64KB BLOCK ERASE (BE64 D8H OR 4BE64 DCH) ...................................................................................................... 33 7.20 CHIP ERASE (CE) (60/C7H) ..................................................................................................................................... 33 7.21 ENTER 4-BYTE ADDRESS MODE (EN4B) (B7H) ........................................................................................................... 34 7.22 EXIT 4-BYTE ADDRESS MODE (EX4B) (E9H) ............................................................................................................... 34 7.23 READ MANUFACTURE ID/ DEVICE ID (REMS) (90H) ................................................................................................... 35 7.24 READ IDENTIFICATION (RDID) (9FH) ......................................................................................................................... 35 2 Uniform Sector Dual and Quad Serial Flash 7.25 READ UNIQUE ID (4BH) .......................................................................................................................................... 36 7.26 ERASE SECURITY REGISTERS (44H) ............................................................................................................................ 36 7.27 PROGRAM SECURITY REGISTERS (42H) ....................................................................................................................... 37 7.28 READ SECURITY REGISTERS (48H) ............................................................................................................................. 38 7.29 ENABLE RESET (66H) AND RESET (99H) ..................................................................................................................... 39 7.30 PROGRAM/ERASE SUSPEND (PES) (75H) ................................................................................................................... 39 7.31 PROGRAM/ERASE RESUME (PER) (7AH) ................................................................................................................... 40 7.32 DEEP POWER-DOWN (DP) (B9H) ............................................................................................................................. 40 7.33 RELEASE FROM DEEP POWER-DOWN AND READ DEVICE ID (RDI) (ABH) ......................................................................... 41 7.34 READ SERIAL FLASH DISCOVERABLE PARAMETER (5AH)................................................................................................. 41 ELECTRICAL CHARACTERISTICS .............................................................................................................. 43 8 8.1 POWER-ON TIMING ................................................................................................................................................ 43 8.2 INITIAL DELIVERY STATE ........................................................................................................................................... 43 8.3 ABSOLUTE MAXIMUM RATINGS ................................................................................................................................ 43 8.4 CAPACITANCE MEASUREMENT CONDITIONS................................................................................................................. 44 8.5 DC CHARACTERISTICS .............................................................................................................................................. 45 8.6 AC CHARACTERISTICS .............................................................................................................................................. 48 ORDERING INFORMATION............................................................................................................................ 55 9 9.1 10 11 GD25Q256E VALID PART NUMBERS ............................................................................................................................................ 56 PACKAGE INFORMATION ......................................................................................................................... 57 10.1 PACKAGE SOP16 300MIL ...................................................................................................................................... 57 10.2 PACKAGE WSON8 (6X5MM) ................................................................................................................................... 58 10.3 PACKAGE WSON8 (8X6MM) ................................................................................................................................... 59 10.4 PACKAGE TFBGA-24BALL (5X5 BALL ARRAY) ............................................................................................................. 60 REVISION HISTORY .................................................................................................................................... 61 3 Uniform Sector Dual and Quad Serial Flash GD25Q256E 1 FEATURES ◆ 256M-bit Serial Flash ◆ Fast Program/Erase Speed - 32M-Byte - Page Program time: 0.25ms typical - 256 Bytes per programmable page - Sector Erase time: 30ms typical - Block Erase time: 0.12s/0.15s typical ◆ Standard, Dual, Quad SPI - Chip Erase time: 70s typical - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#, RESET# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#, RESET# ◆ Flexible Architecture - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET# - Uniform Sector of 4K-Byte - 3 or 4-Byte Address Mode - Uniform Block of 32/64K-Byte ◆ High Speed Clock Frequency ◆ Low Power Consumption - 133MHz for fast read with 30PF load - 16μA typical standby current - Dual I/O Data transfer up to 266Mbits/s - 1μA typical deep power down current - Quad I/O Data transfer up to 532Mbits/s ◆ Advanced Security Features ◆ Software/Hardware Write Protection - 128-bit Unique ID for each device - Write protect all/portion of memory via software - Serial Flash Discoverable parameters (SFDP) register - Enable/Disable protection with WP# Pin - 3x2048-Byte Security Registers With OTP Locks - Top/Bottom Block protection ◆ Single Power Supply Voltage ◆ Endurance and Data Retention - Full voltage range: 2.7-3.6V - Minimum 100,000 Program/Erase Cycles ◆ Package Information - 20-year data retention typical - SOP16 300mil ◆ Allows XiP (eXecute In Place) Operation - WSON8 (6x5mm) - High speed Read reduce overall XiP instruction fetch time - WSON8 (8x6mm) - Continuous Read with Wrap further reduce data latency to - TFBGA-24ball (5x5 Ball Array) fill up SoC cache 4 Uniform Sector Dual and Quad Serial Flash 2 GD25Q256E GENERAL DESCRIPTIONS The GD25Q256E (256M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#/RESET#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s. CONNECTION DIAGRAM CS# 1 8 SO (IO1) 2 HOLD#/ 7 RESET# (IO3) WP# (IO2) 3 6 SCLK VSS 4 5 SI (IO0) Top View VCC 8 - LEAD USON/WSON Top View HOLD# (IO3) 1 16 SCLK VCC 2 15 SI (IO0) 3 14 NC 13 DNU A2 A3 A4 A5 NC NC RESET# DNU B1 B2 B3 B4 B5 NC SCLK VSS VCC NC C1 C2 C3 C4 C5 NC CS# DNU WP# (IO2) NC NC 5 12 NC D3 D4 D5 NC 6 11 NC CS# 7 10 VSS SO (IO1) 8 9 WP# (IO2) D1 D2 NC SO (IO1) E1 E2 E3 E4 E5 NC NC NC NC NC SI(IO0) HOLD# (IO3) RESET# NC 4 Top View NC 16-LEAD SOP 24-BALL TFBGA (5x5 ball array) Note: 1. CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on. 2. The DNU pin/ball must be floating. It may connect to internal signal inside. 3. The NC pin/ball is not connected to any internal signal. It is OK to connect it to the system ground (GND) or leave it floating. 4. The pin of RESET# will remain internal pull up function while this pin is not physically connected in system configuration. However, the internal pull up function will be disabled if the system has physical connection to RESET# pin. 5 Uniform Sector Dual and Quad Serial Flash GD25Q256E PIN DESCRIPTION Table 1. Pin Description for SOP16 Package Pin No. Pin Name I/O Description 1 HOLD# (IO3) I/O 2 VCC 3 RESET# I Reset Input 7 CS# I Chip Select Input 8 SO (IO1) I/O Data Output (Data Input Output 1) 9 WP# (IO2) I/O Write Protect Input (Data Input Output 2) 10 VSS Ground 13 DNU Do Not Use (It may connect to internal signal inside) 15 SI (IO0) I/O 16 SCLK I Hold Input (Data Input Output 3) Power Supply Data Input (Data Input Output 0) Serial Clock Input Table 2. Pin Description for WSON8 Package Pin No. Pin Name I/O Description 1 CS# I 2 SO (IO1) I/O Data Output (Data Input Output 1) 3 WP# (IO2) I/O Write Protect Input (Data Input Output 2) 4 VSS 5 SI (IO0) I/O 6 SCLK I 7 HOLD#/RESET# (IO3) I/O 8 VCC Chip Select Input Ground Data Input (Data Input Output 0) Serial Clock Input Hold or Reset Input (Data Input Output 3) Power Supply Table 3. Pin Description for TFBGA24 Package Pin No. Pin Name I/O Description A4 RESET# I A5/C3 DNU B2 SCLK B3 VSS Ground B4 VCC Power Supply C2 CS# I C4 WP# (IO2) I/O Write Protect Input (Data Input Output 2) D2 SO (IO1) I/O Data Output (Data Input Output 1) D3 SI (IO0) I/O Data Input (Data Input Output 0) D4 HOLD# (IO3) I/O Hold Input (Data Input Output 3) Reset Input Do Not Use (It may connect to internal signal inside) I Serial Clock Input Chip Select Input Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on. 6 Uniform Sector Dual and Quad Serial Flash GD25Q256E BLOCK DIAGRAM Write Control Logic Status Register HOLD#/ RESET# (IO3) SCLK SPI Command & Control Logic High Voltage Generators Page Address Latch/Counter Write Protect Logic and Row Decode WP#(IO2) Flash Memory CS# Column Decode And 256-Byte Page Buffer SI(IO0) SO(IO1) Byte Address Latch/Counter 7 Uniform Sector Dual and Quad Serial Flash 3 GD25Q256E MEMORY ORGANIZATION GD25Q256E Each device has Each block has Each sector has Each page has 32M 64/32K 4K 256 Bytes 128K 256/128 16 - pages 8K 16/8 - - sectors 512/1K - - - blocks UNIFORM BLOCK SECTOR ARCHITECTURE GD25Q256E 64K Bytes Block Sector Architecture Block 511 510 …… …… 2 1 0 Sector Address range 8191 1FFF000H 1FFFFFFH …… …… …… 8176 1FF0000H 1FF0FFFH 8175 1FEF000H 1FEFFFFH …… …… …… 8160 1FE0000H 1FE0FFFH …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… …… 47 02F000H 02FFFFH …… …… …… 32 020000H 020FFFH 31 01F000H 01FFFFH …… …… …… 16 010000H 010FFFH 15 00F000H 00FFFFH …… …… …… 0 000000H 000FFFH 8 Uniform Sector Dual and Quad Serial Flash GD25Q256E 4 DEVICE OPERATIONS 4.1 SPI Mode Standard SPI The GD25Q256E features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK. Dual SPI The GD25Q256E supports Dual SPI operation when using the “Dual Output Fast Read”, “Dual Output Fast Read with 4Byte address”, “Dual I/O Fast Read” and “Dual I/O Fast Read with 4-Byte address” commands (3BH, 3CH, BBH and BCH). These commands allow data to be transferred to or from the device at twice the rate of the standard SPI. When using the Dual SPI command, the SI and SO pins become bidirectional I/O pins: IO0 and IO1. Quad SPI The GD25Q256E supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad Output Fast Read with 4Byte address”, “Quad I/O Fast Read”, “Quad I/O Fast Read with 4-Byte address” (6BH, 6CH, EBH, ECH) commands. These commands allow data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI commands, the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and the WP# and HOLD#/RESET# pins become bidirectional I/O pins: IO2 and IO3. The Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register set to 1. 4.2 HOLD Function The HOLD/RST bit is used to determine whether HOLD or RESET function should be implemented on the hardware pin for 8-pin packages. When HOLD/RST=0, the HOLD#/RESET# pin acts as HOLD# pin. The HOLD function is available when QE=0. If QE=1, The HOLD function is disabled, and the HOLD#/RESET# pin acts as dedicated data I/O pin. The HOLD# signal goes low to stop any serial communications with the device, except the operation of write status register, programming, or erasing in progress. The operation of HOLD needs CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low. If SCLK is not low, HOLD operation will not start until SCLK is low. The HOLD condition ends on rising edge of HOLD# signal with SCLK being low. If SCLK is not low, HOLD operation will not end until SCLK is low. The SO is high impedance, both SI and SCLK don’t care during the HOLD operation. If CS# is driven high during HOLD operation, it will reset the internal logic of the device. To re-start communication with the chip, the HOLD# must be at high and then CS# must be at low. 9 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 1 HOLD Condition CS# SCLK HOLD# HOLD 4.3 HOLD RESET Function The HOLD/RST bit is used to determine whether HOLD or RESET function should be implemented on the hardware pin for 8-pin packages. When HOLD/RST=1, the HOLD#/RESET# pin acts as RESET# pin. The hardware RESET function is available when QE=0. If QE=1, The RESET function is disabled, and the HOLD#/RESET# pin acts as dedicated data I/O pin. For 16-pin and 24-ball packages, a dedicated RESET# is used to do the hardware RESET and it is independent of QE bit setting. The RESET# pin goes low for a minimum period of tRLRH (1μs) will reset the flash. After reset cycle, the flash is at the following states: - Standby mode - All the volatile bits will return to the default status as power on. Figure 2 RESET Condition CS# RESET# RESET 10 Uniform Sector Dual and Quad Serial Flash 5 GD25Q256E DATA PROTECTION The GD25Q256E provide the following data protection methods: ◆ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will return to reset by the following situation: -Power-Up / Software Reset (66H+99H) -Write Disable (WRDI) -Write Status Register (WRSR) -Page Program (PP) -Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE) ◆ Software Protection Mode: The Block Protect bits (BP4-BP0) define the section of the memory array that can be read but not changed. ◆ Hardware Protection Mode: WP# goes low to protect the Block Protect bits (BP4-BP0) and the SRP bits (SRP1 and SRP0). ◆ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down Mode command and Software Reset (66H+99H). ◆ Write Inhibit Voltage (VWI): Device would reset automatically when VCC is below a certain threshold VWI. Table 4. GD25Q256E Protected area size Status Register Content Memory Content BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X 0 0 0 0 NONE NONE NONE NONE 0 0 0 0 1 511 01FF0000h-01FFFFFFh 64KB Upper 1/512 0 0 0 1 0 510 to 511 01FE0000h-01FFFFFFh 128KB Upper 1/256 0 0 0 1 1 508 to 511 01FC0000h-01FFFFFFh 256KB Upper 1/128 0 0 1 0 0 504 to 511 01F80000h-01FFFFFFh 512KB Upper 1/64 0 0 1 0 1 496 to 511 01F00000h-01FFFFFFh 1MB Upper 1/32 0 0 1 1 0 480 to 511 01E00000h-01FFFFFFh 2MB Upper 1/16 0 0 1 1 1 448 to 511 01C00000h-01FFFFFFh 4MB Upper 1/8 0 1 0 0 0 384 to 511 01800000h-01FFFFFFh 8MB Upper 1/4 0 1 0 0 1 256 to 511 01000000h-01FFFFFFh 16MB Upper 1/2 1 0 0 0 1 0 00000000h-0000FFFFh 64KB Lower 1/512 1 0 0 1 0 0 to 1 00000000h-0001FFFFh 128KB Lower 1/256 1 0 0 1 1 0 to 3 00000000h-0003FFFFh 256KB Lower 1/128 1 0 1 0 0 0 to 7 00000000h-0007FFFFh 512KB Lower 1/64 1 0 1 0 1 0 to 15 00000000h-000FFFFFh 1MB Lower 1/32 1 0 1 1 0 0 to 31 00000000h-001FFFFFh 2MB Lower 1/16 1 0 1 1 1 0 to 63 00000000h-003FFFFFh 4MB Lower 1/8 1 1 0 0 0 0 to 127 00000000h-007FFFFFh 8MB Lower 1/4 1 1 0 0 1 0 to 255 00000000h-00FFFFFFh 16MB Lower 1/2 X 1 1 0 X ALL 00000000h-01FFFFFFh 32MB ALL X 1 X 1 X ALL 00000000h-01FFFFFFh 32MB ALL 11 Uniform Sector Dual and Quad Serial Flash GD25Q256E 6 REGISTERS 6.1 Status Register Table 5. Status Register-SR No.1 No. Name Description Note S7 SRP0 Status Register Protection Bit Non-volatile writable S6 BP4 Block Protect Bit Non-volatile writable S5 BP3 Block Protect Bit Non-volatile writable S4 BP2 Block Protect Bit Non-volatile writable S3 BP1 Block Protect Bit Non-volatile writable S2 BP0 Block Protect Bit Non-volatile writable S1 WEL Write Enable Latch Volatile, read only S0 WIP Erase/Write In Progress Volatile, read only Table 6. Status Register-SR No.2 No. Name Description Note S15 SUS1 Erase Suspend Bit Volatile, read only S14 SRP1 Status Register Protection Bit Non-volatile writable S13 LB3 Security Register Lock Bit Non-volatile writable (OTP) S12 LB2 Security Register Lock Bit Non-volatile writable (OTP) S11 LB1 Security Register Lock Bit Non-volatile writable (OTP) S10 SUS2 Program Suspend Bit Volatile, read only S9 QE Quad Enable Bit Non-volatile writable S8 ADS Current Address Mode Bit Volatile, read only Table 7. Status Register-SR No.3 No. Name Description Note S23 HOLD/RST HOLD# or RESET# Function Non-volatile writable S22 DRV1 Output Driver Strength Bit Non-volatile writable S21 DRV0 Output Driver Strength Bit Non-volatile writable S20 ADP Power Up Address Mode Bit Non-volatile writable S19 EE Erase Error Bit Volatile, read only S18 PE Program Error Bit Volatile, read only S17 DC1 Dummy Configuration Bit Non-volatile writable S16 DC0 Dummy Configuration Bit Non-volatile writable The status and control bits of the Status Register are as follows: WIP bit The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When 12 Uniform Sector Dual and Quad Serial Flash GD25Q256E WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means the device is not in program/erase/write status register progress. WEL bit The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase command is accepted. BP4, BP3, BP2, BP1, BP0 bits The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in Table 4) becomes protected against Page Program (PP), Sector Erase (SE), Block Erase (BE), and Chip Erase (CE) commands. The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set. SRP1, SRP0 bits The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down or one time programmable protection. SRP1 SRP0 #WP Status Register 0 0 X Software Protected 0 1 0 Hardware Protected 0 1 1 Hardware Unprotected 1 0 X 1 1 X Power Supply LockDown(1)(2) One Time Program(2) Description The Status Register can be written to after a Write Enable command, WEL=1.(Default) WP#=0, the Status Register locked and cannot be written to. WP#=1, the Status Register is unlocked and can be written to after a Write Enable command, WEL=1. Status Register is protected and cannot be written to again until the next Power-Down, Power-Up cycle. Status Register is permanently protected and cannot be written to. NOTE: 1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state. 2. This feature is available on special order. Please contact GigaDevice for details. ADS bit The Address Status (ADS) bit is a read only bit that indicates the current address mode the device is operating in. The device is in 3-Byte address mode when ADS=0 (default), and in 4-Byte address mode when ADS=1. QE bit The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (It is best to set the QE bit to 0 to avoid short issues if the WP# or HOLD# pin is tied directly to the power 13 Uniform Sector Dual and Quad Serial Flash GD25Q256E supply or ground.) LB3, LB2, LB1 bits The LB3, LB2 and LB1 bits are non-volatile One Time Program (OTP) bits in Status Register (S13, S12 and S11) that provide the write protect control and status to the Security Registers. The default state of LB3, LB2 and LB1 bits are 0, the security registers are unlocked. The LB3, LB2 and LB1 bits can be set to 1 individually using the Write Register instruction. The LB3, LB2 and LB1 bits are One Time Programmable, once they are set to 1, the Security Registers will become readonly permanently. SUS1, SUS2 bits The SUS1 and SUS2 bits are read only bits in the status register (S15 and S10) that are set to 1 after executing an Erase/ Program Suspend (75H) command (The Erase Suspend will set the SUS1 bit to 1, and the Program Suspend will set the SUS2 bit to 1). The SUS1 and SUS2 bits are cleared to 0 by Erase/Program Resume (7AH) command, software reset (66H+99H) command, as well as a power-down, power-up cycle. DC1, DC0 bits The Dummy Configuration (DC) bits are non-volatile, which select the number of dummy cycles between the end of address and the start of read data output. Dummy cycles provide additional latency that is needed to complete the initial read access of the flash array before data can be returned to the host system. Some read commands require additional dummy cycles as the SCLK frequency increases. The following dummy cycle tables provide different dummy cycle settings that are configured. Command DC1, DC0 Dummy Cycles Freq.(MHz) 00 4 104 01 8 133 10 4 104 11 8 133 00 6 104 01 10 133 10 6 104 11 10 133 BBH, BCH EBH, ECH PE bit The Program Error (PE) bit is a read-only bit that indicates a program failure. It will also be set when the user attempts to program a protected array sector or access the locked OTP space. PE is cleared to "0" after program operation resumes. EE bit The Erase Error (EE) bit is a read-only bit that indicates an erase failure. It will also be set when the user attempts to erase a protected array sector or access the locked OTP space. EE is cleared to "0" after erase operation resumes ADP bit The Address Power-up (ADP) bit is a non-volatile writable bit that determines the initial address mode when the device is powered on or reset. This bit is only used during the power on or device reset initialization period. When ADP=0 (factory default), the device will power up into 3-Byte address mode, the Extended Address Register must be used to access memory 14 Uniform Sector Dual and Quad Serial Flash GD25Q256E regions beyond 128Mb. When ADP=1, the device will power up into 4-Byte address mode directly. Power Up Device Initialization & Status Register Refresh (Non-Volatile Cells) 3-Byte Address Standard SPI Dual SPI Quad SPI ADP bit value Enable 4-Byte (B7H) Disable 4-Byte (E9H) ADP = 1 4-Byte Address Software Reset (66H + 99H) Hardware Reset ADP = 0 Standard SPI Dual SPI Quad SPI DRV1, DRV0 bits The DRV1 and DRV0 bits are used to determine the output driver strength for the Read operations. Table 8. Driver Strength for Read Operations DRV1, DRV0 Driver Strength 00 100% 01 75% (default) 10 50% 11 25% HOLD/RST bit The HOLD/RST bit is used to determine whether HOLD# or RESET# function should be implemented on the hardware pin for 8-pin packages. When HOLD/RST=0, the pin acts as HOLD#, When the HOLD/RST=1, the pin acts as RESET#. However, the HOLD# or RESET# function are only available when QE=0, If QE=1, The HOLD# and RESET# functions are disabled, the pin acts as dedicated data I/O pin. 15 Uniform Sector Dual and Quad Serial Flash 6.2 GD25Q256E Extended Address Register Table 9. Extended Address Register No. Name Description Note EA7 Reserved Reserved Reserved EA6 Reserved Reserved Reserved EA5 Reserved Reserved Reserved EA4 Reserved Reserved Reserved EA3 Reserved Reserved Reserved EA2 Reserved Reserved Reserved EA1 Reserved Reserved Reserved EA0 A24 Address bit Volatile writable The bits of the Extended Address Register are as follows: A24 bit The Extended Address Bits are used only when the device is operating in the 3-Byte Address Mode, which are volatile writable by C5H command. A24 Address 0 0000 0000h-00FF FFFFh 1 0100 0000h-01FF FFFFh If the device powers up with ADP bit set to 1, or an “Enter 4-Byte Address Mode (B7H)” instruction is issued, the device will require 4-Byte address input for all address related instructions, and the Extended Address Bit setting will be ignored. Reserved bit It is recommended to set the value of the reserved bit as “0”. 16 Uniform Sector Dual and Quad Serial Flash 7 GD25Q256E COMMAND DESCRIPTIONS All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, with most significant bit first on SI, and each bit is latched on the rising edges of SCLK. Every command sequence starts with a one-byte command code. Depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command sequence has been completed. For the command of Read, Fast Read, Read Status Register or Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. All read instruction can be completed after any bit of the data-out sequence is being shifted out, and then CS# must be driven high to return to deselected status. For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is rejected, and is not executed. That is CS# must be driven high when the number of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset. Table 10. Commands (3- or 4-Byte Addr. Mode) Command Name Byte 1 Byte 2 Byte 3 Write Enable 06H Write Disable 04H Read Status Register-1 05H (S7-S0) (cont.) Read Status Register-2 35H (S15-S8) (cont.) Read Status Register-3 15H (S23-S16) (cont.) Write Status Register-1 01H S7-S0 Write Status Register-2 31H S15-S8 Write Status Register-3 11H S23-S16 C8H (EA7-EA0) C5H EA7-EA0 Read Extended Addr. Register Write Extended Addr. Register Volatile SR write Enable Set Burst with Wrap Chip Erase Enter 4-Byte Address Mode Exit 4-Byte Address Mode Byte 4 Byte 5 50H 77H dummy(1) dummy(1) dummy(1) W7-W0(1) C7/60H B7H E9H 17 Byte 6 Byte 7 Byte 8 Byte 9 Uniform Sector Dual and Quad Serial Flash Read Manufacturer/ Device ID 90H Read Identification 9FH Enable Reset 66H Reset 99H Program/Erase Suspend Program/Erase Resume Deep Power-Down Release From Deep Power-Down 00H (MID7MID0) 00H 00H (ID15-ID8) (ID7-ID0) GD25Q256E (MID7MID0) (ID7-ID0) (cont.) (cont.) 75H 7AH B9H ABH Release From Deep Power-Down and Read ABH dummy dummy dummy (ID7-ID0) (cont.) 5AH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (cont.) 13H A31-A24 A23-A16 A15-A8 A7-A0 (D7-D0) (cont.) 0CH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0) (cont.) 3CH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0)(2) (cont.) 6CH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0)(3) (cont.) Device ID Read Serial Flash Discoverable Parameter Read Data with 4-Byte Address Fast Read with 4-Byte Address Fast Read Dual Output with 4-Byte Address Fast Read Quad Output with 4-Byte Address Fast Read Dual I/O with 4-Byte Address Fast Read Quad I/O with 4-Byte Address Page Program with 4Byte Address Quad Page Program with 4-Byte Address Sector Erase with 4Byte Address Block Erase (32K) with 4-Byte Address Block Erase (64K) with 4-Byte Address BCH A31-A24(4) A23-A16(4) A15-A8(4) A7-A0(4) M7-M0(5) (D7-D0)(2) (cont.) ECH A31-A24(6) A23-A16(6) A15-A8(6) A7-A0(6) M7-M0(7) dummy dummy D7-D0 Next Byte 12H A31-A24 A23-A16 A15-A8 A7-A0 34H A31-A24 A23-A16 A15-A8 A7-A0 21H A31-A24 A23-A16 A15-A8 A7-A0 5CH A31-A24 A23-A16 A15-A8 A7-A0 DCH A31-A24 A23-A16 A15-A8 A7-A0 18 D7-D0(8) Next Byte (D7D0)(3) Uniform Sector Dual and Quad Serial Flash GD25Q256E Table 11. Commands (3-Byte Addr. Mode) Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 Read Data 03H A23-A16 A15-A8 A7-A0 (D7-D0) (cont.) Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (cont.) Dual Output Fast Read 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(2) (cont.) 6BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(3) (cont.) M7-M0(5) (D7-D0)(2) (cont.) M7-M0(7) dummy dummy (D7-D0)(3) (cont.) A7-A0 D7-D0 Next Byte D7-D0(8) Next Byte Quad Output Fast Read Dual I/O Fast Read BBH Quad I/O Fast Read EBH Page Program 02H A23-A16(9) A15-A8(9) A23A16(10) A23-A16 A7-A0(9) A15-A8(10) A7-A0(10) A15-A8 Quad Page Program 32H A23-A16 A15-A8 A7-A0 Sector Erase 20H A23-A16 A15-A8 A7-A0 Block Erase (32K) 52H A23-A16 A15-A8 A7-A0 Block Erase (64K) D8H A23-A16 A15-A8 A7-A0 Read Unique ID 4BH 00H 00H 00H 44H A23-A16 A15-A8 A7-A0 42H A23-A16 A15-A8 A7-A0 D7-D0 Next Byte 48H A23-A16 A15-A8 A7-A0 dummy (D7-D0) Erase Security Registers(11) Program Security Registers(11) Read Security Registers(11) dummy (UID7UID0) Byte 7 Byte 8 Byte 9 (cont.) (cont.) Table 12. Commands (4-Byte Addr. Mode) Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 Byte 7 Read Data 03H A31-A24 A23-A16 A15-A8 A7-A0 (D7-D0) (cont.) Fast Read 0BH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0) (cont.) Dual Output Fast Read 3BH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0)(2) (cont.) 6BH A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0)(3) (cont.) Quad Output Fast Read Byte 8 Dual I/O Fast Read BBH A31-A24(4) A23-A16(4) A15-A8(4) A7-A0(4) M7-M0(5) (D7-D0)(2) (cont.) Quad I/O Fast Read EBH A31-A24(6) A23-A16(6) A15-A8(6) A7-A0(6) M7-M0(6) dummy dummy Page Program 02H A31-A24 A23-A16 A15-A8 A7-A0 D7-D0 Next Byte Quad Page Program 32H A31-A24(6) A23-A16(6) A15-A8(6) A7-A0(6) D7-D0(8) Next Byte Sector Erase 20H A31-A24 A23-A16 A15-A8 A7-A0 Block Erase (32K) 52H A31-A24 A23-A16 A15-A8 A7-A0 Block Erase (64K) D8H A31-A24 A23-A16 A15-A8 A7-A0 19 Byte 9 (D7D0)(3) Uniform Sector Dual and Quad Serial Flash Read Unique ID Erase Security Registers(11) Program Security Registers(11) Read Security Registers(11) GD25Q256E dummy (UID7- 4BH 00H 00H 00H 00H 44H A31-A24 A23-A16 A15-A8 A7-A0 42H A31-A24 A23-A16 A15-A8 A7-A0 D7-D0 Next Byte 48H A31-A24 A23-A16 A15-A8 A7-A0 dummy (D7-D0) Note: 1. Dummy bits and Wrap Bits IO0 = (x, x, x, x, x, x, W4, x) IO1 = (x, x, x, x, x, x, W5, x) IO2 = (x, x, x, x, x, x, W6, x) IO3 = (x, x, x, x, x, x, x, x) 2. Dual Output data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) 3. Quad Output Data IO0 = (D4, D0, …) IO1 = (D5, D1, …) IO2 = (D6, D2, …) IO3 = (D7, D3, …) 4. Dual Input 4-Byte Address IO0 = A30, A28, A26, A24, A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0 IO1 = A31, A29, A27, A25, A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1 5. Dual Input Mode bit IO0 = M6, M4, M2, M0 IO1 = M7, M5, M3, M1 6. Quad Input 4-Byte Address IO0 = A28, A24, A20, A16, A12, A8, A4, A0 IO1 = A29, A25, A21, A17, A13, A9, A5, A1 IO2 = A30, A26, A22, A18, A14, A10, A6, A2 IO3 = A31, A27, A23, A19, A15, A11, A7, A3 7. Quad Input Mode bit IO0 = M4, M0 IO1 = M5, M1 IO2 = M6, M2 IO3 = M7, M3 8. Quad Output Data IO0 = D4, D0, … IO1 = D5, D1, … IO2 = D6, D2, … IO3 = D7, D3, … 20 UID0) (cont.) (cont.) Uniform Sector Dual and Quad Serial Flash GD25Q256E 9. Dual Input Address IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0 IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1 10. Quad Input Address IO0 = A20, A16, A12, A8, A4, A0 IO1 = A21, A17, A13, A9, A5, A1 IO2 = A22, A18, A14, A10, A6, A2 IO3 = A23, A19, A15, A11, A7, A3 11. Security Registers Address Security Register1: A23-A16=00H, A15-A12=1H, A11 = 0b, A10-A0= Byte Address; Security Register2: A23-A16=00H, A15-A12=2H, A11 = 0b, A10-A0= Byte Address; Security Register3: A23-A16=00H, A15-A12=3H, A11 = 0b, A10-A0= Byte Address; TABLE OF ID DEFINITIONS GD25Q256E Operation Code MID7-MID0 ID15-ID8 ID7-ID0 9FH C8 40 19 90H C8 18 ABH 18 21 Uniform Sector Dual and Quad Serial Flash 7.1 GD25Q256E Write Enable (WREN) (06H) The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Quad Page Program (QPP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR) and Erase/Program Security Registers command. The Write Enable (WREN) command sequence: CS# goes low  sending the Write Enable command  CS# goes high. Figure 3. Write Enable Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 06H High-Z SO 7.2 Write Disable (WRDI) (04H) The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit may be set to 0 by issuing the Write Disable (WRDI) command to disable Page Program (PP), Quad Page Program (QPP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register (WRSR), that require WEL be set to 1 for execution. The WRDI command can be used by the user to protect memory areas against inadvertent writes that can possibly corrupt the contents of the memory. The WRDI command is ignored during an embedded operation while WIP bit =1. The WEL bit is reset by following condition: Write Disable command (WRDI), Power-up, and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase commands. The Write Disable command sequence: CS# goes low Sending the Write Disable command CS# goes high. Figure 4. Write Disable Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI SO 04H High-Z 7.3 Read Status Register (RDSR) (05H or 35H or 15H) The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write in Progress (WIP) bit before sending a new command to the device. It is also possible to read the Status Register continuously. For command code of “05H” / “35H” / “15H”, the SO will output Status Register bits S7~S0 / S15~S8 / S23~S16. 22 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 5. Read Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Command 05H or 35H or 15H SI High-Z SO 7 Status Register 1/2/3 6 5 4 3 2 1 0 MSB 7 Status Register 1/2/3 6 5 4 3 2 1 0 7 MSB 7.4 Write Status Register (WRSR) (01H or 31H or 11H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) command has no effect on S19, S18, S15, S10, S8, S1 and S0 of the Status Register. For command code of “01H” / “31H” / “11H”, the Status Register bits S7~S0 / S15~S8 / S23~S16 would be written. CS# must be driven high after the eighth bit of the data byte has been latched in. Otherwise, the Write Status Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only. The Write Status Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode is entered. Figure 6. Write Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 01H/31H/11H 7 6 High-Z MSB SCLK Command SI SO 7.5 Status Register in 5 4 3 2 1 0 Read Extended Address Register (C8H) The Read Extended Address Register instruction is entered by driving CS# low and shifting the instruction code “C8H” into the SI pin on the rising edge of SCLK. The Extended Register bits are then shifted out on the SO pin at the falling edge of SCLK with most significant bit (MSB) first. 23 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 7 Read Extended Address Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 7 6 SCLK Command SI C8H High-Z SO 5 EAR out 4 3 2 MSB 7.6 1 0 7 6 5 EAR out 4 3 2 1 0 7 MSB Write Extended Address Register (C5H) The Write Extended Address Register instruction allows new Address bit values to be written to the Extended Address Register. A Write Enable (WREN) instruction must be executed previously to set the Write Enable Latch (WEL) bit before it can be accepted. The Write Extended Address Register instruction is entered by driving CS# low, sending the instruction code “C5H”, and then writing the Extended Register data Byte. Upon power up or the execution of a Software/Hardware Reset, the Extended Address Register bit values will be cleared to 0. Figure 8 Write Extended Address Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 C5H 7 Extended Addr. Register In 6 5 4 3 2 1 High-Z MSB SCLK Command SI SO 7.7 0 Write Enable for Volatile Status Register (50H) The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be issued prior to a Write Status Register command and any other commands can’t be inserted between them. Otherwise, Write Enable for Volatile Status Register will be cleared. The Write Enable for Volatile Status Register command will not set the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit values. 24 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 9. Write Enable for Volatile Status Register Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 50H High-Z SO 7.8 Read Data Bytes (03H/13H) The Read Data Bytes (READ) command is followed by a 3/4-Byte address, and each bit being latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit being shifted out, at a Max frequency fR, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 10. Read Data Bytes Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command SI 03H High-Z SO 24-bit address 23 22 21 3 2 1 0 MSB MSB 7 6 5 Data Out1 4 3 2 1 Data Out2 0 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.9 Read Data Bytes at Higher Speed (0BH/0CH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3/4-Byte address and a dummy Byte, and each bit being latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit being shifted out, at a Max frequency f C, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. 25 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 11. Read Data Bytes at Higher Speed Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 0BH 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 6 5 4 3 2 1 0 7 6 MSB SO Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.10 Dual Output Fast Read (3BH/3CH) The Dual Output Fast Read command is followed by 3/4-Byte address and a dummy Byte, and each bit being latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Figure 12. Dual Output Fast Read Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24-bit address 3BH 23 22 21 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks SI SO 6 4 2 0 6 4 2 0 6 Data Out1 Data Out2 7 5 3 1 7 5 3 1 MSB MSB 7 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.11 Quad Output Fast Read (6BH/6CH) The Quad Output Fast Read command is followed by 3/4-Byte address and a dummy Byte, and each bit being latched in 26 Uniform Sector Dual and Quad Serial Flash GD25Q256E on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad Output Fast Read command. Figure 13 Quad Output Fast Read Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command IO0 24-bit address 6BH 23 22 21 IO1 High-Z IO2 High-Z IO3 High-Z CS# 3 2 1 0 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Clocks IO0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 Byte1 Byte2 Byte3 Byte4 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.12 Dual I/O Fast Read (BBH/BCH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3/4Byte address and a “Continuous Read Mode” Byte 2-bit per clock by SI and SO, and each bit being latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each Byte of data is shifted out. Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-4) after the input 3- or 4-Byte address (A23-A0 or A31-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Dual I/O Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. If the “Continuous Read Mode” bits (M5-4) do not equal (1, 0), the next command requires the command code, thus returning to normal operation. A Reset command can be also used to reset (M7-0) before issuing normal command. 27 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 14 Dual I/O Fast Read Sequence Diagram ((M5-4) ≠ (1, 0)) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 6 4 2 0 6 5 3 1 7 SCLK Command IO0 BBH IO1 7 A23-16 CS# 4 2 0 6 5 3 1 7 A15-8 4 2 0 6 5 3 1 7 A7-0 4 2 0 5 3 1 M7-0 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SCLK IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. Figure 15 Dual I/O Fast Read Sequence Diagram ((M5-4) = (1, 0)) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 SCLK A23-16 CS# A15-8 A7-0 M7-0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK IO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 IO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte1 Byte2 Byte3 Byte4 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.13 Quad I/O Fast Read (EBH/ECH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3/4Byte address and a “Continuous Read Mode” Byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO2, IO3, and each bit being latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The first Byte addressed can be at any location. The address is automatically incremented to the next higher 28 Uniform Sector Dual and Quad Serial Flash GD25Q256E address after each Byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command. Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits (M7-0) after the input 3- or 4-Byte address (A23-A0 or A31-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the next command requires the command code, thus returning to normal operation. A Reset command can be also used to reset (M7-0) before issuing normal command. Figure 16 Quad I/O Fast Read Sequence Diagram ((M5-4) ≠ (1, 0)) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 4 0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 3 7 SCLK Command IO0 EBH A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. Figure 17 Quad I/O Fast Read Sequence Diagram ((M5-4) = (1, 0)) CS# 0 5 6 7 8 13 14 15 SCLK dummy Address IO[3:0] Addr. M7-4 M3-0 Byte 1 Byte 2 Data out Data out Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap” (77H) commands prior to EBH or ECH. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around” feature for the following EBH or ECH commands. When “Wrap Around” is enabled, the data being accessed can be limited to either an 8/16/32/64-Byte section of a 256-Byte page. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 8/16/32/64-Byte section, the output will wrap around the beginning boundary automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64-Byte) of data without issuing multiple read commands. The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the wrap around section within a page. 29 Uniform Sector Dual and Quad Serial Flash GD25Q256E 7.14 Set Burst with Wrap (77H) The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in standard SPI mode. The Set Burst with Wrap command sequence: CS# goes low  Send Set Burst with Wrap command  Send 24 dummy bits  Send 8 bits “Wrap bits”  CS# goes high. W6,W5 W4=0 W4=1 (default) Wrap Around Wrap Length Wrap Around Wrap Length 0, 0 Yes 8-byte No N/A 0, 1 Yes 16-byte No N/A 1, 0 Yes 32-byte No N/A 1, 1 Yes 64-byte No N/A If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with Wrap command should be issued to set W4=1. Figure 18. Set Burst with Wrap Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 x x x x x x 4 x IO1 x x x x x x 5 x IO2 x x x x x x 6 x IO3 x x x x x x x x SCLK Command IO0 77H W6-W4 7.15 Page Program (PP 02H or 4PP 12H) The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address Bytes and at least one data Byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes low  sending Page Program command  3 or 4-Byte address on SI  at least 1 Byte data on SI  CS# goes high. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 data Bytes are guaranteed to be programmed correctly within the same page. If less than 256 data Bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other Bytes of the same page. CS# must be driven high after the eighth bit of the last data Byte has been latched in; otherwise the Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page 30 Uniform Sector Dual and Quad Serial Flash GD25Q256E Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. Figure 19 Page Program Sequence Diagram (ADS=0) CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command 23 22 21 3 2 1 0 7 MSB 5 4 3 2 1 2078 2079 2076 2077 2075 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 CS# 6 0 MSB 2074 02H Data Byte 1 2073 SI 24-bit address 1 0 SCLK Data Byte 2 SI 7 6 5 4 3 2 MSB Data Byte 3 1 0 7 6 5 4 3 2 MSB Data Byte 256 1 0 7 6 5 4 3 2 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.16 Quad Page Program (32H/34H) The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address Bytes and at least one data Byte on IO pins. The command sequence is shown below. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 data Bytes are guaranteed to be programmed correctly within the same page. If less than 256 data Bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other Bytes of the same page. CS# must be driven high after the eighth bit of the last data Byte has been latched in; otherwise the Quad Page Program (PP) command is not executed. As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) is not executed. 31 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 20 Quad Page Program Sequence Diagram 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 543 0 542 CS# SCLK 0 4 0 4 0 Byte 256 4 0 IO1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 Command IO0 24-bit address 32H 23 22 21 3 2 Byte1 Byte2 1 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.17 Sector Erase (SE 20H or 4SE 21H) The Sector Erase (SE) command is erased the all data of the chosen sector. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered by driving CS# low, followed by the command code, and 3- or 4-address Byte on SI. Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence. The Sector Erase command sequence: CS# goes low  sending Sector Erase command  3-Byte or 4-Byte address on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bit is not executed. Figure 21. Sector Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 20H 24 Bits Address 23 22 MSB 2 1 0 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.18 32KB Block Erase (BE32 52H or 4BE32 5CH) The 32KB Block Erase command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block is a valid address for the 32KB Block Erase command. CS# must be driven low for the entire duration of the sequence. The 32KB Block Erase command sequence: CS# goes low  sending 32KB Block Erase command  3-Byte or 4-Byte 32 Uniform Sector Dual and Quad Serial Flash GD25Q256E address on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 32KB Block Erase command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE1) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits is not executed. Figure 22. 32KB Block Erase Sequence Diagram (ADS=0) CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 24 Bits Address 52H 23 22 MSB 2 1 0 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.19 64KB Block Erase (BE64 D8H or 4BE64 DCH) The 64KB Block Erase command is for erasing the all data of the chosen block. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase command. CS# must be driven low for the entire duration of the sequence. The 64KB Block Erase command sequence: CS# goes low  sending 64KB Block Erase command  3-Byte or 4-Byte address on SI  CS# goes high. CS# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64KB Block Erase command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE2) is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase command applied to a block which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits is not executed. Figure 23. 64KB Block Erase Sequence Diagram (ADS=0) CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI D8H 24 Bits Address 23 22 MSB 2 1 0 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.20 Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is for erasing the all data of the chip. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence. 33 Uniform Sector Dual and Quad Serial Flash GD25Q256E The Chip Erase command sequence: CS# goes low  sending Chip Erase command  CS# goes high. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration is t CE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is executed, if the no block is protected by the Block Protect bits. The Chip Erase (CE) command is ignored if one or more sectors are protected. Figure22. Chip Erase Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 60H or C7H 7.21 Enter 4-Byte Address Mode (EN4B) (B7H) The Enter 4-Byte Address Mode command enables accessing the address length of 32-bit for the memory area of higher density (larger than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit 11 (ADS bit) of status register will be automatically set to “1” to indicate the 4-Byte address mode has been enabled. Once the 4-Byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit. The sequence of issuing EN4B instruction is: CS# goes low  sending Enter 4-Byte mode command CS# goes high. Figure 24 Enter 4-Byte Address Mode Sequence Diagram CS# SCLK SI SO 0 1 2 3 4 5 6 7 Command B7H High-Z 7.22 Exit 4-Byte Address Mode (EX4B) (E9H) The Exit 4-Byte Address Mode command is executed to exit the 4-Byte address mode and return to the default 3-Byte address mode. After sending out the EX4B instruction, the bit 11 (ADS bit) of status register will be cleared to “0” to indicate the exit of the 4-Byte address mode. Once exiting the 4-Byte address mode, the address length will return to 24-bit. The sequence of issuing EX4B instruction is: CS# goes low  sending Exit 4-Byte Address Mode command CS# goes high. 34 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 25 Exit 4-Byte Address Mode Sequence Diagram CS# 0 SCLK 1 2 3 4 5 6 7 Command SI E9H High-Z SO 7.23 Read Manufacture ID/ Device ID (REMS) (90H) The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID. The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first. Figure 26. Read Manufacture ID/ Device ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 90H 23 22 21 3 2 1 0 High-Z SO CS# 24-bit address 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK SI SO 7 Manufacturer ID 6 5 4 3 2 1 MSB Device ID 0 7 6 5 4 3 2 1 0 MSB 7.24 Read Identification (RDID) (9FH) The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. The Read Identification (RDID) command while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued while the device is in Deep Power-Down Mode. The device is first selected by driving CS# low. Then, the 8-bit command code for the command is shifted in. This is followed by the 24-bit device identification, stored in the memory. Each bit is shifted out on the falling edge of Serial Clock. The Read Identification (RDID) command is terminated by driving CS# high at any time during data output. When CS# is driven high, the device is in the Standby Mode. Once in the Standby Mode, the device waits to be selected, so that it can receive, decode 35 Uniform Sector Dual and Quad Serial Flash GD25Q256E and execute commands. Figure 27. Read Identification ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 7 6 SCLK SI 9FH SO Manufacturer ID 5 4 3 2 1 0 MSB CS# 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCLK SI Memory Type ID15-ID8 7 6 5 4 3 2 1 0 SO MSB Capacity ID7-ID0 6 5 4 3 2 1 7 0 MSB 7.25 Read Unique ID (4BH) The Read Unique ID command accesses a factory-set read-only 128bit number that is unique to each device. The Unique ID can be used in conjunction with user software methods to help prevent copying or cloning of a system. The Read Unique ID command sequence: CS# goes low  sending Read Unique ID command  3- or 4-Byte Address (000000H or 00000000H) Dummy Byte128bit Unique ID Out CS# goes high. Figure 28. Read Unique ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK 24-bit address (000000H) 23 22 21 3 2 Command SI 4BH 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI 7 6 5 4 3 2 1 SO 0 7 6 MSB Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.26 Erase Security Registers (44H) The GD25Q256E provides 3x2048-Byte Security Registers which can be erased and programmed individually. These 36 Uniform Sector Dual and Quad Serial Flash GD25Q256E registers may be used by the system manufacturers to store security and other important information separately from the main memory array. The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The Erase Security Registers command sequence: CS# goes low  sending Erase Security Registers command  3- or 4-Byte address on SI  CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last address Byte has been latched in; otherwise the Erase Security Registers command is not executed. As soon as CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit (LB1, LB2, LB3) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security Registers will be permanently locked; the Erase Security Registers command will be ignored. Address A23-16 A15-12 A11 A10-0 Security Register #1 00H 0001b 0b Don't care Security Register #2 00H 0010b 0b Don't care Security Register #3 00H 0011b 0b Don't care Figure 29. Erase Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Command SI 44H 24 Bits Address 23 22 MSB 2 1 0 Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.27 Program Security Registers (42H) The Program Security Registers command is similar to the Page Program command. Each security register contains eight pages content. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Program Security Registers command. The Program Security Registers command is entered by driving CS# Low, followed by the command code (42H), three address Bytes and at least one data Byte on SI. As soon as CS# is driven high, the self-timed Program Security Registers cycle (whose duration is t PP) is initiated. While the Program Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. If the Security Registers Lock Bit (LB1, LB2, LB3) is set to 1, the Security Registers will be permanently locked. Program Security Registers command will be ignored. Address A23-16 A15-12 A11 A10-0 Security Register #1 00H 0001b 0b Byte Address Security Register #2 00H 0010b 0b Byte Address Security Register #3 00H 0011b 0b Byte Address 37 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 30. Program Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Command 23 22 21 3 2 Data Byte 1 1 0 7 MSB 5 4 3 2 1 0 2078 2079 6 2077 7 2076 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2073 MSB 2072 CS# 6 2075 42H 2074 SI 24-bit address 1 0 SCLK Data Byte 2 SI 7 6 5 4 3 Data Byte 3 2 1 0 7 MSB 6 5 4 3 Data Byte 256 2 1 0 MSB 5 4 3 2 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 7.28 Read Security Registers (48H) The Read Security Registers command is similar to Fast Read command. The command is followed by a 3- or 4-Byte address (A23-A0 or A31-A0) and a dummy Byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit is shifted out, at a Max frequency f C, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Once the A10-0 address reaches the last byte of the register (Byte 7FFH), it will reset to 000H, the command is completed by driving CS# high. Address A23-16 A15-12 A11 A10-0 Security Register #1 00H 0001b 0b Byte Address Security Register #2 00H 0010b 0b Byte Address Security Register #3 00H 0011b 0b Byte Address Figure 31. Read Security Registers command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 48H 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI SO 7 6 5 4 3 2 1 0 7 6 MSB Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Note: The device default is in 24-bit address mode. For 4-Byte mode or 4-Byte command, the address length is 32-bit. 38 Uniform Sector Dual and Quad Serial Flash GD25Q256E 7.29 Enable Reset (66H) and Reset (99H) If the Reset command is accepted, any on-going internal operation will be terminated and the device will return to its default power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Deep Power Down Mode, Continuous Read Mode bit setting (M7-M0) and Wrap Bit Setting (W6-W4). The “Enable Reset (66H)” and “Reset (99H)” command sequence as follow: CS# goes low  Sending Enable Reset command  CS# goes high  CS# goes low  Sending Reset command  CS# goes high. Once the Reset command is accepted by the device, the device will take approximately t RST / tRST_E to reset. During this period, no command will be accepted. Data corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset command sequence is accepted by the device. It is recommended to check the WIP bit and the SUS1/SUS2 bit in Status Register before issuing the Reset command sequence. Figure 32. Enable Reset and Reset command Sequence Diagram CS# 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCLK SI Command Command 66H 99H High-Z SO 7.30 Program/Erase Suspend (PES) (75H) The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase operation and then read data from any other sector or block. The Write Status Register command (01H, 31H, 11H) and Erase/Program Security Registers command (44H, 42H) and Erase commands (20H, 21H, 52H, 5CH, D8H, DCH, C7H, 60H) and Page Program command (02H, 12H, 32H, 34H) are not allowed during Program suspend. The Write Status Register command (01H, 31H, 11H) and Erase Security Registers command (44H) and Erase commands (20H, 21H, 52H, 5CH, D8H, DCH, C7H, 60H) are not allowed during Erase suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation. The Program/Erase Suspend command will be accepted by the device only if the SUS1/SUS2 bit in the Status Register equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS1/SUS2 bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared from 1 to 0 within “tsus” and the SUS1/SUS2 bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off during the suspend period will reset the device and release the suspend state. Figure 33. Program/Erase Suspend Sequence Diagram CS# 0 1 2 3 4 5 6 7 tSUS SCLK Command SI SO 75H High-Z Accept read command 39 Uniform Sector Dual and Quad Serial Flash GD25Q256E 7.31 Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a Program/Erase Suspend command. The Program/Erase Resume command will be accepted by the device only if the SUS1/SUS2 bit equal to 1 and the WIP bit equal to 0. After issued the SUS1/SUS2 bit in the status register will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the program operation. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend is active. Figure 34. Program/Erase Resume Sequence Diagram CS# 0 1 2 3 4 5 6 7 SCLK Command SI 7AH Resume Erase/Program 7.32 Deep Power-Down (DP) (B9H) Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase commands. Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command or software reset command. The Release from Deep Power-Down and Read Device ID (RDI) command releases the device from Deep Power-Down mode, also allows the Device ID of the device to be output on SO. The Deep Power-Down Mode automatically stops at Power-Down, and the device always in the Standby Mode after PowerUp. The Deep Power-Down command sequence: CS# goes low  sending Deep Power-Down command  CS# goes high. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a delay of t DP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep Power-Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 35. Deep Power-Down Sequence Diagram CS# 0 1 2 3 4 5 6 7 tDP SCLK Command SI Deep Power-down mode B9H 40 Uniform Sector Dual and Quad Serial Flash GD25Q256E 7.33 Release from Deep Power-Down and Read Device ID (RDI) (ABH) The Release from Power-Down and Read Device ID command is a multi-purpose command. It can be used to release the device from the Power-Down state or obtain the devices electronic identification (ID) number. To release the device from the Power-Down state, the command is issued by driving the CS# pin low, shifting the instruction code “ABH” and driving CS# high. Release from Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other command are accepted. The CS# pin must remain high during the tRES1 time duration. When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The ID7~ID0 are then shifted out on the falling edge of SCLK with most significant bit (MSB) first. The Device ID value is listed in Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by driving CS# high. When used to release the device from the Power-Down state and obtain the ID7~ID0, the command is the same as previously described, except that after CS# is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or Write cycle is in process (when WIP equals 1) the command is ignored and will not have any effects on the current cycle. Figure 36. Release Power-Down Sequence Diagram CS# 0 1 2 3 4 5 6 t RES1 7 SCLK Command SI ABH Deep Power-down mode Stand-by mode Figure 37. Release Power-Down/Read Device ID Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 SCLK Command SI SO ABH High-Z t RES2 3 Dummy Bytes 23 22 2 1 0 MSB 7 6 Device ID 5 4 3 2 MSB 1 0 Deep Power-down Mode Stand-by Mode 7.34 Read Serial Flash Discoverable Parameter (5AH) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216B. 41 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 38. Read Serial Flash Discoverable Parameter command Sequence Diagram CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI 24-bit address 5AH 23 22 21 3 2 1 0 High-Z SO CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Byte SI SO 7 6 5 4 3 2 1 0 7 6 MSB Data Out1 5 4 3 2 1 0 Data Out2 7 6 5 MSB Table 13. Signature and Parameter Identification Data Values (Please contact GigaDevice for Details) 42 Uniform Sector Dual and Quad Serial Flash 8 GD25Q256E ELECTRICAL CHARACTERISTICS 8.1 Power-On Timing Figure 39. Power-On Timing Sequence Diagram Vcc(max) Chip Selection is not allowed Vcc(min) tVSL Device is fully accessible VWI Time Table 14. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min. tVSL VCC (min.) to device operation 2.5 VWI Write Inhibit Voltage 1.5 Max. Unit ms 2.5 V 8.2 Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register contains 00H, except that DRV0 bit (S21) is set to 1. 8.3 Absolute Maximum Ratings Parameter Value Ambient Operating Temperature (TA) -40 to 85 Unit ℃ -40 to 105 -40 to 125 ℃ Storage Temperature -65 to 150 Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V Applied Input/Output Voltage -0.6 to VCC+0.4 V -0.6 to 4.2 V VCC 43 Uniform Sector Dual and Quad Serial Flash GD25Q256E Figure 40. Input Test Waveform and Measurement Level Maximum Negative Overshoot Waveform 20ns Maximum Positive Overshoot Waveform 20ns 20ns Vss Vcc + 2.0V Vss-2.0V Vcc 20ns 20ns 20ns 8.4 Capacitance Measurement Conditions Symbol Parameter Min. Typ. Max. Unit Conditions CIN Input Capacitance 6 pF VIN=0V COUT Output Capacitance 8 pF VOUT=0V CL Load Capacitance 30 pF Input Rise And Fall time 5 ns Input Pulse Voltage 0.1VCC to 0.8VCC V Input Timing Reference Voltage 0.2VCC to 0.7VCC V 0.5VCC V Output Timing Reference Voltage Figure 41. Absolute Maximum Ratings Diagram Input timing reference level 0.8VCC 0.7VCC 0.1VCC 0.2VCC Output timing reference level AC Measurement Level Note: Input pulse rise and fall time are
GD25Q256EYIGR 价格&库存

很抱歉,暂时无法提供与“GD25Q256EYIGR”相匹配的价格&库存,您可以联系我们找货

免费人工找货
GD25Q256EYIGR
  •  国内价格
  • 1+10.94001
  • 10+10.14001
  • 30+9.98000
  • 100+9.50000

库存:182

GD25Q256EYIGR
    •  国内价格
    • 1+25.25040
    • 10+23.12280
    • 30+21.79440
    • 100+11.93400
    • 500+11.31840
    • 1000+11.04840

    库存:2026

    GD25Q256EYIGR
      •  国内价格 香港价格
      • 1+29.970301+3.73580
      • 10+26.5301010+3.30700
      • 100+23.76630100+2.96250
      • 250+23.67300250+2.95080
      • 500+22.83340500+2.84620
      • 1000+21.748901000+2.71100
      • 3000+20.571103000+2.56420

      库存:0

      GD25Q256EYIGR
      •  国内价格
      • 1+31.33060

      库存:34