PB521BX

PB521BX P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 21mΩ @VGS = -4.5V -7.4A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) SYMBOL VDS LIMITS Drain-Source Voltage PARAMETERS/TEST CONDITIONS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current TA = 25 °C TA= 70 °C Power Dissipation -6.4 IDM TA= 25 °C Tj, Tstg Operating Junction & Storage Temperature Range A 29 2.1 PD TA= 70°C V -8 ID 1 UNITS -20 W 1.4 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL 2 TYPICAL RqJA 1 Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. REV 1.2 1 MAXIMUM UNITS 57 °C / W 2014/8/15 PB521BX P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) TEST CONDITIONS LIMITS PARAMETER SYMBOL Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -20 VGS(th) VDS = VGS, ID = -250mA -0.45 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55°C -10 mA MIN TYP MAX -0.6 -0.85 UNITS STATIC Gate Threshold Voltage Drain-Source On-State Resistance1 Forward Transconductance VGS = -1.8V, ID = -1A 24 40 VGS = -2.5V, ID = -2A 19 28 VGS = -4.5V, ID = -2.5A 15 21 VDS = -10V, ID = -2.5A 21 RDS(ON) 1 gfs V mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg 2 Qg Total Gate Charge 2 Qgs 2 td(on) Gate-Source Charge Gate-Drain Charge 2 Qgd Turn-On Delay Time Rise Time 2 tr Turn-Off Delay Time Fall Time2 2 td(off) 1727 VGS = 0V, VDS = -10V, f = 1MHz 155 VGS = 0V, VDS = 0V, f = 1MHz VDS = -10V , VGS = -4.5V, ID = -2.5A Ω 10 21 nC 1.8 4.9 28 VDD = -10V ID @ -2.5A, VGEN = -4.5V, RG = 6Ω 21 nS 81 tf 48 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Charge Qrr trr IF = -2.5A, VGS = 0V IF = -2.5A, dlF/dt = 100A / μS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. REV 1.2 pF 179 2 -1.7 A -1.2 V 35 nS 18 nC 2014/8/15 PB521BX P-Channel Enhancement Mode MOSFET REV 1.2 3 2014/8/15 PB521BX P-Channel Enhancement Mode MOSFET REV 1.2 4 2014/8/15 PB521BX P-Channel Enhancement Mode MOSFET REV 1.2 5 2014/8/15