ESD9B5VD-2/TR

ESD9B5VD ESD9B5VD 1-Line, Bi-directional, Normal-Capacitance, http//:www.sh-willsemi.com Transient Voltage Suppressors Descriptions The ESD9B5VD is a Bi-directional transient voltage suppressor (TVS) to protect sensitive electronic components from electrostatic discharge (ESD). It is SOD-923 particularly well-suited for cellular phones, PMP, MID, PDA, digital cameras and other electronic equipment. The ESD9B5VD is safely dissipating ESD strikes to meet the ESD immunity testing of IEC61000-4-2 level Pin1 Pin2 4. The ESD9B5VD is available in SOD-923 package. Standard products are Pb-free and Halogen-free. Pin configuration (Top view) Features  Reverse stand-off voltage : 5V Max  Peak power (tp=8/20μs) : 85W Max.  Peak current (tp=8/20μs) : 6.5A Max.  Transient protection IEC61000-4-2 9C : ±30kV air 9C = Device code : ±30kV contact  Low clamping voltage  Low leakage current  Small package Marking Order information Applications  Cell phone  PMP  MID  PDA  Digital camera  Other electronics equipments Will Semiconductor Ltd. 1 Device Package Shipping ESD9B5VD-2/TR SOD-923 10000/Tape&Reel Revision 2.5, 2015/01/16 ESD9B5VD Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20μs) Ppk 85 W Peak pulse current (tp=8/20μs) Ipp 6.5 A ESD according to IEC61000-4-2 air discharge ±30 VESD kV ESD according to IEC61000-4-2 contact discharge ±30 TJ 125 o Operating temperature TOP -40~85 o Lead temperature TL 260 o TSTG -55~150 o Junction temperature Storage temperature C C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Condition Max. Unit 5.0 V 1.0 μA 8.2 V Ipp = 1.0A, tp = 8/20μs 9 V Ipp = 6.5A, tp = 8/20μs 13 V 35 pF Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA Reveres breakdown voltage Clamping voltage 1) Junction capacitance Min. 5.6 Typ. 7.5 VCL CJ F=1MHz, VR=0V 20 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 2.5, 2015/01/16 ESD9B5VD o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (Ta=25 C, unless otherwise noted) 50 T2 10 0 0 10 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns 8/20μs waveform per IEC61000-4-5 Time (ns) Contact discharge current waveform per IEC61000-4-2 30 C - Junction capacitance (pF) 16 Pulse waveform: tp=8/20μs VC - Clamping voltage (V) t 60ns 30ns 30 12 8 f = 1MHz VAC = 50mV 25 20 15 4 0 2 4 6 10 8 0 1 2 3 4 Ipp - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 5 1000 % of Rated power Peak pulse power (W) 100 100 10 80 60 40 20 0 1 10 100 Pulse time (μs) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 2.5, 2015/01/16 ESD9B5VD o Typical characteristics (TA=25 C, unless otherwise noted) ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. (-8kV contact discharge per IEC61000-4-2) 4 Revision 2.5, 2015/01/16 ESD9B5VD Package outline dimensions SOD-923 E b D E1 A c θ A1 Symbol θ Recommend PCB Layout (Unit: mm) 0.60 Dimensions in millimeter Min. Typ. Max. A 0.35 - 0.45 A1 0.00 - 0.05 b 0.15 - 0.27 c - - 0.18 D 0.55 0.60 0.65 E 0.90 1.00 1.10 E1 0.75 0.80 0.85 θ o 7 Ref. 0.30 0.40 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 5 Revision 2.5, 2015/01/16