HX2300A

HX2300A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION SCHEMATIC DIAGRAM The HX2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES     S VDS =20V，ID =2.5A RDS(ON)(Typ.)=61mΩ @VGS=2.5V RDS(ON)(Typ.)=46mΩ @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package PIN ASSIGNMENT SOT-23 (TOP VIEW) D 3 APPLICATION   PWM applications Load switch A2SHB PACKAGE  SOT-23 1 2 G S ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel -55°C to +150°C SOT-23 A2SHB 3000 HX2300A ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V TA=25°C Continuous drain current (TJ = 150 °C) a TA=70°C ID 2.5 2.0 Pulsed drain current b IDM 10 Continuous source current (diode conduction) a IS 0.6 TA=25°C Power dissipation a TA=70°C Operating junction and storage temperature range REV.1.0 ~1~ PD TJ, Tstg 0.71 0.46 -55—150 A W ℃ HX2300A THERMAL CHARACTERISTICS Parameter Maximum junction-to-ambient a Symbol ≤5s Max 120 145 140 175 62 78 RθJA Steady-State Steady-State Maximum junction-to-foot Typ RθJC Unit ℃/W Notes a. Surface mounted on 1" x 1" FR4 board b. Pulse width limited by maximum junction temperature ELECTRICAL CHARACTERISTICS (TA=25℃ Parameter Symbol unless otherwise noted) Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 20 - - V Zero gate voltage drain current IDSS VDS=20V, VGS=0V - - 1 µA Gate-body leakage IGSS VDS=0V, VGS=±12V - - ±100 nA VDS=VGS, ID=250µA 0.5 0.65 1.0 V VGS=4.5V, ID=2.5A - 46 60 61 85 - 5 - - 180 - - 38 - - 20 - - 8 - - 7 - - 30 - - 7 - - 3.5 - - 0.6 - - 0.45 - - 0.76 1.16 ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance a RDS(ON) Forward transconductance a gfs VGS=2.5V, ID=1A VDS=5V, ID=2A mΩ S Dynamic Characteristics b Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=10V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time Rise time Turn-off delay time Fall time tD(ON) tr tD(OFF) tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD=10V RL=3 ohm VGEN=4.5V RGEN=6ohm VDS=10V ID=2.5A VGS=4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=2.5A Notes a. Pulse test: Pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing REV.1.0 ~2~ V HX2300A TYPICAL CHARACTERISTICS REV.1.0 (25 °C, unless otherwise noted) ~3~ HX2300A REV.1.0 ~4~ HX2300A PACKAGE INFORMATION  SOT-23 Symbol Dimensions In Millimeters Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 2.250 2.550 0.089 0.100 E1 1.200 1.400 0.047 0.055 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 L1 θ REV.1.0 Dimensions In Inches 0.550 REF. 0 o 0.022 REF. 8 ~5~ o 0 o 8o HX2300A RECOMMENDED MINIMUM PADS FOR SOT-23 REV.1.0 ~6~