FEMDNN032G-58K73

Rev. 1.0 FEMDNN032G-58K73 FORESEE eMMC FEMDNN032G-58K73 Datasheet E-00696 Version: 1.0 2020.01.09 LONGSYS ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an “AS IS” basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Longsys Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other-wise. Longsys products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Longsys products, contact your nearest www.longsys.com Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 Longsys office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2018 Shenzhen Longsys Electronics Co., Ltd. All rights reserved. www.longsys.com Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 Revision History: Rev. Date Changes Remark 1.0 2020/01/09 Basic spec and architecture Preliminary www.longsys.com Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 CONTENTS 1. Introduction ................................................................................................. 1 2. Product List .................................................................................................. 1 3. Features ...................................................................................................... 1 4. Functional Description.................................................................................... 2 5. Product Specifications .................................................................................... 3 5.1 Performance ............................................................................................ 3 5.2 Power Consumption .................................................................................. 3 6. Pin Assignments ........................................................................................... 4 6.1 Ball Array view ......................................................................................... 4 6.2 Ball Array view ......................................................................................... 5 www.longsys.com Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 1. Introduction FORESEE eMMC is an embedded storage solution designed in the BGA package. The FORESEE eMMC consists of NAND flash and eMMC controller. The controller could manage the interface protocols， wear-leveling，bad block management and ECC. FORESEE eMMC has high performance at a competitive cost, high quality and low power consumption, and eMMC is compatible with JEDEC standard eMMC 5.1 specifications. 2. Product List Density Part Number 32GB FEMDNN032G-58K73 Capacity Package Package (User Density) Size(mm) Type 28.9GB 11.5x13x1.0 153 FBGA 3. Features Ø eMMC5.1 specification compatibility (Backward compatible to eMMC4.41/4.5/5.0) Ø Ø Ø Ø Global-wear-leveling Ø Supported features. Bus mode - HS400, HS200 - Data bus width: 1 bit (default), 4 bits, 8 bits - Partitioning, RPMB - MMC I/F Clock frequency : 0~200MHz - Boot feature, boot partition - HW Reset/SW Reset - Vcc(NAND) : 2.7 - 3.6V - Discard, Trim, Erase, Sanitize - Vccq(Controller) : 1.7 - 1.95V / 2.7 - 3.6V - Background operations, HPI - Enhanced reliable write - Operation (-25℃ ~ +85℃) - S.M.A.R.T. Health Report - Storage without operation (-40℃ ~ +85℃) - FFU - Sleep / awake Operating voltage range Temperature Ø Sudden-Power-Loss safeguard Ø Hardware ECC engine Ø Unique firmware backup mechanism www.longsys.com Ø Others - Compliance with the RoHS Directive Page 1 Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 4. Functional Description FORESEE eMMC with powerful L2P (Logical to Physical) NAND Flash management algorithm provides unique functions: Ø Host independence from details of operating NAND flash Ø Internal ECC to correct defect in NAND flash Ø Sudden-Power-Loss safeguard To prevent from data loss, a mechanism named Sudden-Power-Loss safeguard is added in the eMMC. In the case of sudden power-failure, the eMMC would work properly after power cycling. Ø Global-wear-leveling To achieve the best stability and device endurance, this eMMC equips the Global Wear Leveling algorithm. It ensures that not only normal area, but also the frequently accessed area, such as FAT, would be programmed and erased evenly. Ø IDA(Initial Data Acceleration) The eMMC prevents the pre-burned data from data-loss with IDA, in case of our customer had pre-burned data to eMMC, before the eMMC being SMT. Ø Cache The eMMC enhanced the data written performance with Cache, with which our customer would get more endurance and reliability. www.longsys.com Page 2 Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 5. Product Specifications 5.1 Performance Density Write Read 32GB Up to 120MB/s Up to 235 MB/s • Test Condition: Bus width x8, 200MHz DDR, 512KB data transfer, w/o file system overhead, measured on internal board • Test tool: uBOOT (Without O/S) • Chunk size: 1MB, • Test area: 100MB/ Full-range of LBA. 5.2 Power Consumption 5.2.1 Active power consumption during operation Density Icc Iccq 32GB 130mA 150mA • Power Measurement conditions: Bus configuration =x8 @200MHz DDR, 25℃. • Vcc:3.3V & Vccq：1.8V. • The measurement for max RMS current is the average RMS current consumption over a period of 100ms. 5.2.2 Low power mode (stand-by) Density Icc Iccq 32GB 120uA 160uA • Power Measurement conditions: Bus configuration =x8 @200MHz DDR, 25℃. • Standby: Nand Vcc & Controller Vccq power supply is switched on. • The measurement for max RMS current is the average RMS current consumption over a period of 100ms. 5.2.3 Low power mode (sleep) Density Icc Iccq 32GB 0 160uA • Power Measurement conditions: Bus configuration =x8 @200MHz DDR, 25℃. • Sleep: Nand Vcc power supply is switched off(Controller Vccq on) • The measurement for max RMS current is the average RMS current consumption over a period of 100ms. www.longsys.com Page 3 Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 6. Pin Assignments 6.1 Ball Array view FBGA153 - Ball Array (Top View through package) www.longsys.com Page 4 Longsys Electronics Rev. 1.0 FEMDNN032G-58K73 6.2 Ball Array view Signal Description CLOCK Each cycle of the clock directs a transfer on the command line and on the data (CLK) lines. This signal is a bidirectional command channel used for device initialization and command transfer. COMMAND The CMD Signal has 2 operation modes: open drain, for initialization, and (CMD) push-pull, for command transfer. Commands are sent from the host to the device, and responses are sent from the device to the host. These are bidirectional data signal. The DAT signals operate in push-pull mode. By default, after power-up or RESET, only DAT0 is used for data transfer. The controller can configure a wider data bus for data transfer wither using DAT DATA (DAT0-DAT7) [3:0](4bit mode)or DAT[7:0](8bit mode). Includes internal pull-up resistors for data lines DAT[7:1].Immediately after entering the 4-bit mode, the device disconnects the internal pull-up resistors on the DAT1 and DAT2 lines.(The DAT3 line internal pull-up is left connected.)Upon entering the 8bit mode, the device disconnects the internal pull-up on the DAT1, DAT2, and DAT[7:4]lines. Data Strobe (DS) RESET (RSTN) Vccq Vcc VDDi Vss,Vssq Newly assigned pin for HS400 mode. Data Strobe is generated from e.MMC to host. In HS400 mode, read data and CRC response are synchronized with Data Strobe. Hardware Reset Input Vccq is the power supply line for host interface, have two power mode: High power mode:2.7V~3.6V; Lower power mode:1.7V~1.95V Vcc is the power supply line for internal flash memory, its power voltage range is:2.7V~3.6V VDDi is internal power node, not the power supply. Connect 1uF capacitor VDDi to ground Ground lines. Note: NC: No Connect, shall be connected to ground or left floating. RFU: Reserved for Future Use, must be left floating for future use. VSF: Vendor Specific Function, must be left floating. www.longsys.com Page 5 Longsys Electronics