BC337/338(NPN)
TO-92 Bipolar Transistors
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Features
Power dissipation
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Value
BC337
50
BC338
30
BC337
45
BC338
25
Units
V
V
Dimensions in inches and (millimeters)
5
V
Collector Current -Continuous
800
mA
PD
Total Device Dissipation
625
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337
BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCBO
conditions
MIN
IC= 10mA ,
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
Transition frequency
fT
Collector Output Capacitance
Cob
ht t p : //
TYP
MAX
UNIT
IC= 100uA, IE=0
50
30
V
V
45
25
5
V
V
V
IB=0
VCEO
Base-emitter voltage
Revision:20170701-P1
Test
IE= 10uA, IC=0
VCB= 45V, IE=0
VCB= 25V, IE=0
VCE= 40V, IB=0
VCE= 20V, IB=0
VEB= 4 V, IC=0
VCE=1V, IC= 100mA
VCE=1V, IC= 300mA
IC=500mA, IB= 50mA
IC= 500mA, IB=50mA
100
100
160
250
60
VCE=1V, IC= 300mA
VCE= 5V, IC= 10mA
f = 100MHz
VCB=10V,IE=0
f=1MHZ
www.lgesem i .c o m
210
0.1
0.1
0.2
0.2
0.1
630
250
400
630
uA
0.7
1.2
V
V
1.2
V
uA
uA
MHz
15
pF
mail:lge@lgesemi.com
BC337/338(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
Revision:20170701-P1
ht t p : //
www.lgesem i .c o m
mail:lge@lgesemi.com
BC337/338(NPN)
TO-92 Bipolar Transistors
Revision:20170701-P1
ht t p : //
www.lgesem i .c o m
mail:lge@lgesemi.com
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