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RS1B

RS1B

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    -

  • 描述:

    RS1B

  • 数据手册
  • 价格&库存
RS1B 数据手册
山东晶导微电子股份有限公司 RS1A THRU RS1M Jingdao Microelectronics co.LTD Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Fast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: RS1A~RS1M Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.055g / 0.002oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols RS1A RS1B RS1D RS1G RS1J RS1K RS1M Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c= 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Forward Voltage at 1 A VF 1.3 V IR 5 50 μA Cj 15 pF Parameter Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time Typical Thermal Resistance (1) (2) Operating and Storage Temperature Range t rr 150 RθJA T,j T stg 250 500 ns 75 °C/W -55 ~ +150 °C (1)Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A (2)P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas. 2015.11 SMA-F-RS1A ~RS1M-1A1KV Page 1 of 3 Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current( μ A) Fig.1 Forward Current Derating Curve 100 T J =125 °C 10 1.0 T J =25 °C 0.1 00 Fig.3 Typical Instaneous Forward Characteristics 40 60 80 100 120 140 Reverse Voltage (%) pF) Fig.4 Typical Junction Capacitance T J =25 °C JunctionCapacitance ( Instaneous Forward Current (A) 10 20 percent of Rated Peak Case Temperature (°C) 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 100 T J =25 °C 10 1 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2015.11 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 RS1A THRU RS1M Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil The recommended mounting pad size 2.4 (94) 0.3 12 Type number Marking code RS1A RS1A 1.8 (71) mm Unit : (mil) 2015.11 a Marking 1.8 (71) 1.8 (71) g e A D JD511214B6 RS1B RS1B RS1D RS1D RS1G RS1G RS1J RS1J RS1K RS1K RS1M RS1M Page 3 of 3

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