TTB145N08A

TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd 80V N-Channel Trench MOSFET FEATURES  High Density Cell Design for Ultra Low Rdson  Fully Characterized Avalanche Voltage and Current  Good Stability with High EAS  Excellent Package for Good Heat Dissipation APPLICATIONS  Power Switching Application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply Device Marking and Package Information Device Package Marking TTB145N08A TO-263 145N08A TTP145N08A TO-220 145N08A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDSS 82 V ID 145 A IDM 580 A VGSS ±20 V EAS 271 mJ Avalanche Current IAS 42.5 A Power Dissipation (TC = 25ºC) PD 272.7 W TJ, Tstg -55~+175 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.55 Thermal Resistance, Junction-to-Ambient RthJA 62.5 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Operating Junction and Storage Temperature Range Thermal Resistance Parameter ºC/W V1.0 1 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 82 -- -- VDS = 82V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 82V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 3 4 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 30A -- 4.8 5.9 mΩ gfs VDS = 5V, ID = 20A -- 36 -- S -- 8200 -- -- 416 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 40V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 300 -- Total Gate Charge Qg -- 160 -- Gate-Source Charge Qgs -- 30 -- Gate-Drain Charge Qgd -- 35 -- Turn-on Delay Time td(on) -- 24 -- Turn-on Rise Time tr -- 45 -- Turn-off Delay Time td(off) -- 79 -- -- 30 -- -- -- 145 -- -- 580 Turn-off Fall Time VDD = 40V, ID = 20A, VGS = 10V VDD = 40V, ID = 20A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Time trr -- 50 -- ns Reverse Recovery Charge Qrr IF = 20A, diF/dt = 100A/μs -- 110 -- nC Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V1.0 2 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 10V 8V 6V 5V 4.5V 4V 100 80 ID, Drain Current (A) ID, Drain Current (A) 120 60 40 20 VDS = 10V 100 TJ = 25ºC 80 60 40 TJ = 150ºC 20 0 0 0 1 2 3 4 5 0 VDS, Drain-to-Source Voltage (V) 4 5 6 105 VGS = 10V TJ = 25ºC 6.5 Ciss Capacitance (pF) RDS(on), On-Resistance (mΩ) 3 Figure 4. Capacitance 7 6 5.5 5 4.5 104 Coss 103 Crss 102 4 101 VGS = 0 f = 1MHz 3.5 3 0 20 40 60 80 100 100 120 0 ID, Drain Current (A) 20 40 60 80 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 12 102 VDS = 40V 10 101 IS, Source Current (A) VGS, Gate-to-Source Voltage (V) 2 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current 8 6 4 2 TJ = 125ºC 100 10-1 10-2 TJ = 25ºC 10-3 10-4 0 10-5 0 30 60 90 120 150 180 Qg, Total Gate Charge (nC) V1.0 1 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Temperature Figure 8. Threshold Voltage vs. Temperature 1 VGS = 10V ID = 30A 2 0.5 VGS(th), (Variance) RDS(on), (Normalized) 2.5 1.5 1 ID = 250µA 0 -0.5 -1 0.5 -1.5 0 -50 0 50 100 -50 150 TJ, Junction Temperature (ºC) VBR(DSS), (Normalized) 1.1 1 0.9 0.8 100 150 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (Normalized) ID = 250µA 1.2 50 100 150 Figure 10. Transient Thermal Impedance 1.3 0 50 TJ, Junction Temperature (ºC) Figure 9. Breakdown voltage vs. Junction Temperature -50 0 101 100 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 Tp, Pulse Width (s) Figure 11. Safe operation area for ID, Drain Current(A) 103 102 101 100 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 10-1 10-2 10-2 10-1 100 101 102 103 VDS, Drain-Source Voltage(V) V1.0 4 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.0 5 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd TO-220 V1.0 6 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd TO-263 V1.0 7 www.tsinghuaicwx.com TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics Co.,Ltd Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. 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