FKBB3004

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 30V 9mΩ 46A PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 46 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 29 A Continuous Drain Current, VGS @ 10V1 11 A Continuous Drain Current, VGS @ 10V1 9 A 92 A 57.8 mJ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current 34 A Total Power Dissipation4 29 W Total Power Dissipation4 1.67 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance Data and specifications subject to change without notice. www.fetek.com.tw Ver : A Typ. 1 Max. Unit --- 75 ℃/W --- 4.32 ℃/W 1 FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=15A --- --- 9 VGS=4.5V , ID=10A --- --- 15 1.0 --- 2.5 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 9.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---  Qg Total Gate Charge (4.5V) --- 12.8 --- --- 3.3 --- VDS=20V , VGS=4.5V , ID=12A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 6.5 --- Td(on) Turn-On Delay Time --- 4.5 --- nC Rise Time VDD=12V , VGS=10V , RG=3.3 --- 10.8 --- Turn-Off Delay Time ID=5A --- 25.5 --- Fall Time --- 9.6 --- Ciss Input Capacitance --- 1317 --- Coss Output Capacitance --- 163 --- Crss Reverse Transfer Capacitance --- 131 --- Min. Typ. Max. Unit --- --- 46 A --- --- 92 A --- --- 1 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=34A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Typical Characteristics 12 12 ID=12A VGS=10V VGS=7V 10 11 VGS=4.5V RDSON (mΩ) ID Drain Current (A) VGS=5V 8 VGS=3V 6 9 4 8 2 6 0 0 0.25 0.5 2 0.75 4 6 8 10 VGS (V) VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 12 VDS=20V VGS , Gate to Source Voltage (V) IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 ID=12A 8 6 4 2 0 0 0 0.3 0.6 0 0.9 Fig.3 Forward Characteristics Of Reverse 12 18 24 30 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON DSON vs. TJ J 3 FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 10000 100.00 10us 100us F=1.0MHz 10.00 1ms 1000 10ms ID (A) Capacitance (pF) Ciss Coss 100ms 1.00 DC 100 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 VDS , Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.11 Unclamped Inductive Switching Waveform 4