FKD3006

FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary Description BVDSS RDSON ID 30V 5.5mΩ 80A TO252 Pin Configuration The FKD3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V 1 80 A Continuous Drain Current, VGS @ 10V 1 57 A Continuous Drain Current, VGS @ 10V 1 27 17 A Continuous Drain Current, VGS @ 10V 1 23 14.5 A ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Pulsed Drain Current 10s Steady State 2 Single Pulse Avalanche Energy 3 Units 160 A 115.2 mJ IAS Avalanche Current PD@TC=25℃ Total Power Dissipation 4 48 A 53 W PD@TA=25℃ Total Power Dissipation 4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 6 2.4 W Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient (Steady State) RθJA Thermal Resistance Junction-Ambient (t ≤10s) RθJC 1 Thermal Resistance Junction-Case Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 1 1 Max. Unit --- 62 ℃/W --- 25 ℃/W --- 2.8 ℃/W 1 FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=30A --- 4.7 5.5 VGS=4.5V , ID=15A --- 7.5 9 1.0 1.5 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4  Qg Total Gate Charge (4.5V) --- 20 --- Qgs Gate-Source Charge --- 7.6 --- Qgd Gate-Drain Charge --- 7.2 --- Td(on) Turn-On Delay Time --- 7.8 --- Tr Td(off) Tf VDS=15V , VGS=4.5V , ID=15A Rise Time VDD=15V , VGS=10V , RG=3.3 --- 15 --- Turn-Off Delay Time ID=15A --- 37.3 --- uA nC ns Fall Time --- 10.6 --- Ciss Input Capacitance --- 2295 --- Coss Output Capacitance --- 267 --- Crss Reverse Transfer Capacitance --- 210 --- Min. Typ. Max. Unit --- --- 80 A --- --- 160 A VGS=0V , IS=1A , TJ=25℃ --- --- 1 V VDS=15V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current Conditions 1,5 2,5 2 VG=VD=0V , Force Current VSD Diode Forward Voltage trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , --- 14 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Typical Characteristics 180 9 ID=12A 120 VGS=10V 90 VGS=7V VGS=5V VGS=3V 8 RDSON (mΩ) ID Drain Current (A) 150 VGS=4.5V 6 60 5 30 0 3 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 ID =15A TJ=25℃ VGS , Gate to Source Voltage (V) TJ=150℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 12 18 24 30 QG , Total Gate Charge (nC) 36 42 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 -5 40 85 130 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKD3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss Crss 100 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.11 Unclamped Inductive Switching Waveform 4