FKBB3002

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary Description BVDSS RDSON ID 30V 18mΩ 28A PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS ±20 V Continuous Drain Current, VGS @ 10V1 28 A Continuous Drain Current, VGS @ 10V1 18 A 55 A 22.1 mJ Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current 21 A PD@TC=25℃ Total Power Dissipation4 20 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance Data and specifications subject to change without notice. www.fetek.com.tw Ver : A Typ. 1 Max. Unit --- 75 ℃/W --- 6 ℃/W 1 FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ VGS=10V , ID=10A --- --- 18 VGS=4.5V , ID=5A --- --- 30 1.0 --- 2.5 V --- -5.1 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=1A --- 4.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 ---  Qg Total Gate Charge (4.5V) --- 7.2 --- --- 1.4 --- VDS=20V , VGS=4.5V , ID=10A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.2 --- Td(on) Turn-On Delay Time --- 4.1 --- nC Rise Time VDD=12V , VGS=10V , RG=3.3 --- 9.8 --- Turn-Off Delay Time ID=5A --- 15.5 --- Fall Time --- 6.0 --- Ciss Input Capacitance --- 572 --- Coss Output Capacitance --- 81 --- Crss Reverse Transfer Capacitance --- 65 --- Min. Typ. Max. Unit --- --- 28 A --- --- 55 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Typical Characteristics 12 28 VGS=10V ID=9A VGS=7V 24 VGS=5V 8 VGS=4.5V RDSON (mΩ) ID , Drain Current (A) 10 VGS=3V 6 20 4 16 2 0 12 0 0.5 1 1.5 2 2 4 6 VDS , Drain-to-Source Voltage (V) 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 6 10 VGS Gate to Source Voltage (V) VDS=20V IS Source Current(A) 8 ID=10A 4.5 6 TJ=150℃ TJ=25℃ 4 3 1.5 2 0 0 0 0.3 0.6 0 0.9 2.5 5 7.5 10 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode 2.1 Normalized On Resistance 1.8 1.8 Normalized VGS(th) 1.4 1.5 1.2 1 0.9 0.6 0.6 0.3 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 10us 100us 10.00 100 ID (A) Capacitance (pF) Ciss Coss 10ms 100ms DC 1.00 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 VDS Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.11 Unclamped Inductive Waveform 4