GPU150HF120D1SE

GPU150HF120D1SE 1200V/150A 2 in one-package Features：  1200V150A,VCE(sat)(typ)=2.30V  SPT（Soft Punch Through）technology     Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications： Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 300 TC = 100°C 150 A ICM Pulse Collector Current TJ = 150°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 500 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C 1200 V Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data IF Diode Continuous Forward Current IFM Diode Maximum Forward Current -1- www.daxin-semi.com TC = 25°C 300 TC = 100°C 150 A 300 Rev.1 A 2018 GPU150HF120D1SE Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 150A, VGE = 15V Min Typ Max 1200 Unit V 4.5 TJ = 25°C 2.30 TJ = 125°C 2.70 1 mA 200 nA 5.7 V 2.50 V Switching Characteristics of IGBT td(on) tr TJ = 25°C 35 TJ = 125°C 40 TJ = 25°C 55 TJ = 125°C 60 TJ = 25°C 340 Turn-on Delay Time ns Turn-on Rise Time td(off) tf Turn-off Delay Time Turn-off Fall Time Eon ns ns VCC = 600V IC = 150A RG = 4.7Ω VGE = ±15V Inductive Load TJ = 125°C 370 TJ = 25°C 90 TJ = 125°C 120 TJ = 25°C 6.30 TJ = 125°C 8.00 TJ = 25°C 4.10 TJ = 125°C 7.20 TJ = 25°C 1140 nC TJ = 25°C 2.5 Ω TJ = 25°C 10.8 TJ = 25°C 1.65 TJ = 25°C 0.94 ns Turn-on Switching Loss Eoff mJ Turn-off Switching Loss mJ Qg Total Gate Charge Rgint Integrated gate resistor Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance RθJC Thermal Resistance, Junction-to-Case (IGBT) -2- f = 1M; Vpp = 1V VCE = 25V VGE = 0V f = 1MHz www.daxin-semi.com nF 0.25 Rev.1 2018 °C/W GPU150HF120D1SE Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 150A , VGE = 0V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr IF = 150A, di/dt=2600A/μs, Vrr = 600V, Diode Reverse Recovery Energy Err RθJC 1.90 2.20 V TJ = 125°C 1.90 TJ = 25°C 150 TJ = 125°C 200 TJ = 25°C 165 ns Diode Reverse Recovery Charge Qrr TJ = 25°C A TJ = 125°C 190 TJ = 25°C 14.50 TJ = 125°C 21.00 TJ = 25°C 4.50 TJ = 125°C 7.30 nC mJ Thermal Resistance, Junction-to-Case (Diode) 0.38 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute RθCS Case-To-Sink(Conductive Grease Applied) M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight -3- 2500 V 0.1 °C/W 160 www.daxin-semi.com Rev.1 g 2018 GPU150HF120D1SE Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V -4- www.daxin-semi.com Rev.1 2018 GPU150HF120D1SE Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=150A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=±15V,RGoff=4.7Ω，Tvj=125℃ -5- www.daxin-semi.com Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ， IF=f(VF) Rev.1 2018 GPU150HF120D1SE Fig 9. switching losses Diode, Err=f(IF),,RGon=4.7Ω,VCE=600V -6- www.daxin-semi.com Fig 10. switching losses Diode, Err=f(RG),IF=150A,VCE=600V Rev.1 2018 GPU150HF120D1SE Internal Circuit: Package Dimension Dimensions in Millimeters -7- www.daxin-semi.com Rev.1 2018