GPU300HF120D2

GPU300HF120D2 1200V/300A 2 in one-package Features：     1200V300A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 62mm half bridge module General Applications： Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 600 TC = 100°C 300 A ICM Pulse Collector Current TJ = 150°C 600 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1315 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C 1200 V Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage IF Diode Continuous Forward Current IFM Diode Maximum Forward Current -1- www.daxin-semi.com Preliminary Data TC = 25°C 600 TC = 100°C 300 A 600 Rev.1 A 2018 GPU300HF120D2 Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min 1200 BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 300A, VGE = 15V Typ Max Unit V 4.5 TJ = 25°C 3.00 TJ = 125°C 3.60 5 mA 400 nA 5.7 V 3.20 V Switching Characteristics of IGBT td(on) tr TJ = 25°C 130 TJ = 125°C 140 TJ = 25°C 105 TJ = 125°C 110 TJ = 25°C 820 Turn-on Delay Time ns Turn-on Rise Time td(off) tf Turn-off Delay Time Turn-off Fall Time Eon ns ns VCC = 600V IC = 300A RG = 3.3Ω VGE = ±15V Inductive Load TJ = 125°C 890 TJ = 25°C 110 TJ = 125°C 130 TJ = 25°C 11.5 TJ = 125°C 15.5 TJ = 25°C 22.5 TJ = 125°C 26.0 TJ = 25°C 2550 nC TJ = 25°C 2.5 Ω TJ = 25°C 25 TJ = 25°C 3.5 TJ = 25°C 2.0 ns Turn-on Switching Loss Eoff mJ Turn-off Switching Loss mJ Qg Total Gate Charge Rgint Integrated gate resistor Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance RθJC Thermal Resistance, Junction-to-Case (IGBT) -2- f = 1M; Vpp = 1V VCE = 25V VGE = 0V f = 1MHz www.daxin-semi.com nF 0.095 Rev.1 2018 °C/W GPU300HF120D2 Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 300A , VGE = 0V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr IF = 300A, di/dt=2780A/μs, Vrr = 600V, Diode Reverse Recovery Energy Err RθJC 1.90 2.20 V TJ = 125°C 1.90 TJ = 25°C 200 TJ = 125°C 300 TJ = 25°C 230 ns Diode Reverse Recovery Charge Qrr TJ = 25°C A TJ = 125°C 290 TJ = 25°C 27.50 TJ = 125°C 46.50 TJ = 25°C 10.00 TJ = 125°C 17.50 nC mJ Thermal Resistance, Junction-to-Case (Diode) 0.115 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute RθCS Case-To-Sink(Conductive Grease Applied) M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight -3- 2500 V 0.1 °C/W 315 www.daxin-semi.com Rev.1 g 2018 GPU300HF120D2 Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=3.3Ω,RGoff=3.3Ω,VCE=600V -4- www.daxin-semi.com Rev.1 2018 GPU300HF120D2 i： ri（K/W）： τi（s）： Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=300A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=±15V,RGoff=3.3Ω，Tvj=125℃ -5- www.daxin-semi.com 1 0.009826 0.000510 2 0.07291 0.01232 3 4 0.1082 0.07171 0.1688 2.639 Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ， IF=f(VF) Rev.1 2018 GPU300HF120D2 Fig 9. switching losses Diode, Err=f(IF),,RGon=3.3Ω,VCE=600V -6- www.daxin-semi.com Fig 10. switching losses Diode, Err=f(RG),IF=300A,VCE=600V Rev.1 2018 GPU300HF120D2 Internal Circuit: Package Dimension Dimensions in Millimeters -7- www.daxin-semi.com Rev.1 2018