GPU100HF120D1SE

GPU100HF120D1SE 1200V/100A 2 in one-package Features：  1200V100A,VCE(sat)(typ)=2.30V  SPT（Soft Punch Through）technology     Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications： Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±30 V IC Continuous Collector Current TC = 25°C 200 TC = 100°C 100 A ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 400 W tsc Short Circuit Withstand Time > 10 µs TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C 1200 V Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current TC = 25°C 200 IF A Diode Continuous Forward Current IFM TC = 100°C 100 Diode Maximum Forward Current -1- www.daxin-semi.com 200 Rev.1 2018 A GPU100HF120D1SE Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Test Conditions Min 1200 BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector to Emitter Leakage Current VGE = 0V,VCE = VCES IGES Gate to Emitter Leakage Current VGE = ±30V, VCE = 0V VGE(th) Gate Threshold Voltage IC = 1mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage (Module Level) IC = 100A, VGE = 15V Typ Unit V 4.5 TJ = 25°C Max 2.30 1 mA 200 nA 5.7 V 2.50 V TJ = 125°C 2.70 Switching Characteristics of IGBT td(on) tr TJ = 25°C 25 TJ = 125°C 30 TJ = 25°C 50 TJ = 125°C 55 TJ = 25°C 290 TJ = 125°C 300 TJ = 25°C 90 TJ = 125°C 150 TJ = 25°C 4.50 TJ = 125°C 5.20 TJ = 25°C 2.30 TJ = 125°C 4.50 TJ = 25°C 780 nC TJ = 25°C 2.5 Ω TJ = 25°C 7.20 TJ = 25°C 1.10 TJ = 25°C 0.63 Turn-on Delay Time ns Turn-on Rise Time td(off) tf Turn-off Delay Time Turn-off Fall Time Eon ns ns VCC = 600V IC = 100A RG = 5.6Ω VGE = ±15V Inductive Load ns Turn-on Switching Loss Eoff mJ Turn-off Switching Loss Qg Total Gate Charge Rgint Integrated gate resistor Cies Input Capacitance mJ f = 1M; Vpp = 1V VCE = 25V VGE = 0V f = 1MHz Coes Output Capacitance Cres Reverse Transfer Capacitance RθJC Thermal Resistance, Junction-to-Case (IGBT) -2- www.daxin-semi.com nF 0.31 Rev.1 2018 °C/W GPU100HF120D1SE Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage IF = 100A , VGE = 0V Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr IF = 100A, di/dt=650A/μs, Vrr = 600V, Diode Reverse Recovery Energy Err RθJC 1.90 TJ = 125°C 1.90 TJ = 25°C 250 2.20 V ns Diode Reverse Recovery Charge Qrr TJ = 25°C TJ = 125°C 390 TJ = 25°C 75 TJ = 125°C 80 TJ = 25°C 8.50 TJ = 125°C 13.50 TJ = 25°C 2.30 TJ = 125°C 3.80 A nC mJ Thermal Resistance, Junction-to-Case (Diode) 0.46 °C/W Module Characteristics Parameter Min. Typ. Max. Unit Viso Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute RθCS Case-To-Sink(Conductive Grease Applied) M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight -3- 2500 V 0.1 °C/W 160 www.daxin-semi.com Rev.1 g 2018 GPU100HF120D1SE Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V -4- www.daxin-semi.com Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=±15V,RGon=5.6Ω,RGoff=5.6Ω,VCE=600V Rev.1 2018 GPU100HF120D1SE Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=±15V,IC=100A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE), VGE=±15V,RGoff=5.6Ω，Tvj=125℃ -5- www.daxin-semi.com Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ，IF=f(VF) Rev.1 2018 GPU100HF120D1SE Fig 9. switching losses Diode, Err=f(IF),,RGon=7.5Ω,VCE=600V -6- www.daxin-semi.com Fig 10. switching losses Diode, Err=f(RG),IF=100A,VCE=600V Rev.1 2018 GPU100HF120D1SE Internal Circuit: Package Dimension Dimensions in Millimeters -7- www.daxin-semi.com Rev.1 2018