AO3401A

R UMW SMD Type UMW AO3401A P-Channel Enhancement MOSFET SOT–23 ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 1. GATE 2. SOURCE 3. DRAIN D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Ta = 25℃ ID Ta = 70℃ Pulsed Drain Current Power Dissipation IDM Ta = 25℃ PD Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Thermal Resistance.Junction- to-Ambient RthJA -3.5 1.4 1 W 90 125 Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 1 A -30 60 www.umw-ic.com V -4.2 RthJC Thermal Resistance.Junction- to-Case Unit ℃/W ℃ 友台半导体有限公司 R UMW SMD Type UMW AO3401A P-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Test Conditions ID=-250μA, VGS=0V VDS=0V, VGS=±12V Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA Static Drain-Source On-Resistance RDS(On) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg -0.4 VGS=-2.5V, ID=-1A 120 -25 7 pF 115 77 VGS=0V, VDS=0V, f=1MHz 6 Gate Drain Charge Qgd 3 Turn-On DelayTime td(on) 6.3 Turn-On Rise Time tr Turn-Off DelayTime td(off) Ω 9.4 VGS=-4.5V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=6Ω nC 2 3.2 ns 38.3 12 tf Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/μs 20.2 Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/μs 11.2 IS=-1A,VGS=0V -0.75 www.umw-ic.com S 954 VGS=0V, VDS=-15V, f=1MHz Qg IS VSD mΩ A 11 Qgs Maximum Body-Diode Continuous Current V 65 Gate Source Charge Diode Forward Voltage -1.3 VGS=-4.5V, ID=-4A Total Gate Charge Turn-Off Fall Time nA 50 VDS=-5V, ID=-5A μA ±100 VGS=-10V, ID=-4.2A VGS=-4.5V, VDS=-5V Unit V -5 IGSS gFS -30 VDS=-24V, VGS=0V, TJ=55℃ Gate-Body leakage current ID(ON) Max -1 IDSS On state drain current Typ VDS=-24V, VGS=0V Zero Gate Voltage Drain Current Forward Transconductance Min 2 nC -2.2 A -1 V 友台半导体有限公司 R UMW SMD Type UMW AO3401A P-Channel Enhancement MOSFET ■ Typical Characterisitics 10 25.00 -10V V DS =-5V -4.5V 20.00 8 6 15.00 -ID(A) -ID (A) -3V -2.5V 10.00 V GS =-2V 5.00 0.00 0.00 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 V GS =-2.5V V GS =-4.5V 60 40 V GS =-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 V GS =-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 I D=-2A 1.0E-01 130 125°C -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 www.umw-ic.com 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 友台半导体有限公司 R UMW SMD Type UMW AO3401A P-Channel Enhancement MOSFET ■ Typical Characterisitics 1400 5 V DS =-15V ID =-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 C iss 800 600 400 C oss 1 C rss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics T J(Max) =150°C T A =25°C 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 T J(Max) =150°C T A =25°C 10 µs R DS(ON) 10.0 limited 30 100 µs Power (W) -ID (Amps) 100.0 5 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0.1 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe . Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on /T T J,PK =T A +P DM .ZθJA .RθJA R θJA =90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 R UMW SMD Type UMW AO3401A P-Channel Enhancement MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° X1PV 3R Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3401A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司