SE30150B

Dec 2014 SE30150B N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device For a single MOSFET    VDS = 30V RDS(ON) = 1.6mΩ @ VGS=10 @IDS=30A RDS(ON) = 2.1mΩ @ VGS=4.5 @IDS=25A Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 150 340 A PD 90 W TJ -55 to 150 ℃ 1. SE30150B Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 24V, VGS=0V IGSS Gate-Body Leakage Current VGS=20 V Gate Threshold Voltage VDS= VGS, ID=250μA 1 1.7 VGS=4.5V, ID=25A - 2.1 VGS(th) RDS(ON) Static Drain-Source On-Resistance 2 30 VGS=10V, ID=30A V 1.6 1 μA 100 nA 3.0 V 1.9 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz 7032 pF 898 pF 743 pF 80 nC 19 nC 38 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=15V, 20 ns td(off) Turn-Off Delay Time RGEN=1Ω 80 ns td(r) Turn-On Rise Time ID=1A 36 ns td(f) Turn-Off Fall Time 33 ns VGS=10V, VDS=15V, ID=30A Thermal Resistance Symbol Parameter Typ Max Units RθJC Junction to Case - 2 ℃/W RθJA Junction to Ambient (t≦10s) - 50 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE30150B Test Circuits and Waveform ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE30150B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE30150B Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE30150B The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.