TIP31C

TIP31/31A/31B/31C NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・Complement to type TIP32/32A/32B/32C APPLICATIONS ・Medium power linear switching applications PIN JS PINNING DESCRIPTION MI Base 2 Collector;connected to mounting base 3 Emitter TO-220 O CR 1 Absolute maximum ratings(Ta=25℃) PARAMETER CONDITIONS Se SYMBOL TIP31 Collector-base voltage TIP31A Collector-emitter voltage IC Collector current (DC) ICM Collector current-Pulse IB Base current PC Collector power dissipation V 80 TIP31C Emitter-base voltage 40 60 Open base TIP31B VEBO 100 r to uc nd TIP31 V 80 co TIP31C VCEO 60 Open emitter TIP31B UNIT 40 mi TIP31A VCBO VALUE 100 Open collector 5 V 3 A 5 A 1 A TC=25℃ 40 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ www.jsmsemi.com 第１／４页 TIP31/31A/31B/31C NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) CONDITIONS 40 TIP31A 60 MAX TIP31C 100 Base-emitter on voltage UNIT V 80 CR IC=3A IB=0.375A 1.2 V IC=3A ; VCE=4V 1.8 V 0.2 mA 0.3 mA 1.0 mA TIP31 VCE=40V; VEB=0 TIP31A VCE=60V; VEB=0 TIP31B VCE=80V; VEB=0 O ICES TYP. IC=30mA; IB=0 TIP31B Collector-emitter saturation voltage Collector cut-off current MIN TIP31 MI VBE Collector-emitter sustaining voltage JS VCEsat PARAMETER Se TIP31/31A VCE=30V; IB=0 TIP31B/31C VCE=60V; IB=0 co Collector cut-off current VCE=100V; VEB=0 mi ICEO TIP31C Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V hFE-2 DC current gain IC=3A ; VCE=4V Transiton frequency IC=0.5A ; VCE=10V fT r to uc nd IEBO www.jsmsemi.com 25 10 3 50 MHz 第２／４页 TIP31/31A/31B/31C NPN Power Transistors PACKAGE OUTLINE O CR MI JS r to uc nd co mi Se Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) www.jsmsemi.com 第３／４页 TIP31/31A/31B/31C NPN Power Transistors O CR MI JS r to uc nd co mi Se 4 www.jsmsemi.com 第４／４页