JSM3420S
20V N-ChannelEnhancement-Mode MOSFET
Features
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ID=6A@VGS=10V
ID=5A@VGS=4.5V
RDS(on)=19mΩ(Typ.)@VGS=10V
RDS(on)=23mΩ(Typ.)@VGS=4.5V
RDS(on)=31mΩ(Typ.)@VGS=2.5V
RDS(on)=42mΩ(Typ.)@VGS=1.8V
Low On-Resistance
Low input capacitance
Fast switching speed
Low input/output leakage
Application:
Power Management
Battery Power System
Automobile Electronics
Portable Appliances
Load Switch
DSC
● Package: SOT23, SOT23-3L
● Lead free and green device
Drain
Gate
Source
N-MOS
G. Gate
S. Source
D. Drain
O
CR
MI
JS
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
TC=25ºC
Drain Current a
Limit
Unit
VDS
20
V
VGS
±10
V
c
mi
Se
Drain-Source Voltage
6.0
ID
TC=70ºC
Drain Current –Pulsed a
IDM
Power Dissipation (TC=25ºC)
24
A
1.56
W
c
du
on
PD
Power Dissipation – Derate Above 25ºC
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance, Junction-to-Ambient1
0.012
W/ºC
TSTG
-55 ~ +150
ºC
TJ
-55 ~ +150
ºC
RθJA
90
ºC/W
Symbol
Condition
Off Characteristics
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
20
---
---
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V, TJ=25°C
---
---
1
nA
Gate-Body Leakage
IGSS
VGS=±10V, VDS=0V
---
---
±100
μA
VGS(th)
VDS=VGS, ID=250μA
0.4
0.75
1.1
V
VGS=10V, ID=6.0A
---
19
24
VGS=4.5V, ID=5.0A
---
22
28
VGS=2.5V, ID=4.0A
---
31
42
On Characteristics
VGS=0V, ID=250μA
r
to
Electrical Characteristics (TJ=25ºC unless otherwise noted)
Parameter
A
3.6
a
Gate Threshold Voltage
Drain-Source On-State Resistance
RDS(on)
Forward Transconductance
Drain-Source Diode Characteristics
Continuous Source Current
mΩ
VGS=1.8V, ID=2.0A
---
42
63
gfs
VDS=10V, ID=6A
---
9.5
---
S
IS
VG=VD=0V, Force Current
---
---
6.0
A
a
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第1/4页
JSM3420S
20V N-ChannelEnhancement-Mode MOSFET
Diode Forward Voltage
VSD
VGS=0V, IS=1A
---
---
1.2
---
600
---
---
113
---
Crss
---
60
---
Total Gate Charge
Qg
---
7.2
---
Gate-Source Charge
Qgs
---
1.5
---
Gate-Drain Charge
Qgd
---
1.9
---
Turn-On Delay Time
Td(on)
---
13
---
Tr
---
53
---
---
18.2
---
---
10.8
---
V
Dynamic Characteristics b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
CR
MI
JS
Fall Time
pF
b
Rise Time
Turn-Off Delay Time
VDS=10V, VGS=0V, F=1.0MHz
Td(off)
VDS=10V, VGS=4.5V, ID=6.0A
VDD=10V, VGS=4.5V
RG=3Ω, RL=1.5Ω
Tf
nC
ns
Notes: a. Repetitive Rating: Pulsed width limited by maximum junction temperature.
b. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%.
c. Guaranteed by design, not subject to production testing.
Switching Time Test Circuit and Waveforms
O
c
du
on
c
mi
Se
r
to
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第2/4页
JSM3420S
20V N-ChannelEnhancement-Mode MOSFET
Soldering Methods For Products
1.
2.
Storage environment : Temperature=10ºC~35ºC, Humidity=65%±15%
Reflow soldering of surface mount devices
CR
MI
JS
Figure : Temperature Profile
Profile Feature
Average ramp-up rate (TL to TP)
O
TSmax to TL
- Ramp-up rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Time within 5ºC of actual Peak Temperature (tP)
Ramp-down rate
Time 25ºC to Peak Temperature
3.
Pb devices
Pb-Free devices
< 3ºC/sec
100ºC
150ºC
60 ~ 120 sec
100ºC
200ºC
60 ~ 180 sec
< 3ºC/sec
< 3ºC/sec
183ºC
60 ~ 150 sec
217ºC
60 ~ 150 sec
240ºC +0/-5ºC
260ºC +0/-5ºC
10 ~ 30 sec
20 ~ 40 sec
< 6ºC/sec
< 6ºC/sec
< 6 minutes
< 8 minutes
Peak Temperature
Dipping Time
245ºC ±5ºC
260ºC +0/-5ºC
- 经锡炉或回焊炉的温度切勿超过 260 ºC (Max safe temperature: 260℃)。
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r
to
Flow (wave) soldering (solder dipping)
Product
< 3ºC/sec
c
du
on
Peak Temperature (TP)
Pb-Free Assembly
c
mi
Se
Preheat
- Temperature Min (TSmin)
- Temperature Max (TSmax)
- Time (Min to Max) (ts)
Sn-Pb Eutectic Assembly
5sec ±1sec
5sec ±1sec
第3/4页
JSM3420S
20V N-ChannelEnhancement-Mode MOSFET
尺寸图/PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
0.90
1.10
D
0.30
0.50
E
0.35
0.48
G
1.80
2.00
H
0.02
0.10
J
0.05
0.15
K
2.20
2.60
E
K
B
CR
MI
JS
J
D
G
O
H
C
All Dimensions in mm
0.95
0.95
c
du
on
c
mi
Se
SOLDERING FOOTPRINT
2.00
0.80
Unit: mm
r
to
0.90
包装信息/PACKAGE INFORMATION
Part No.
Package
Shipping
JSM3420S
SOT-23
3000pcs / Tape & Reel
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第4/4页
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