BZT52C8V2S-WD

BZT52C2V0S THRU BZT52C75S Zener Voltage - 2 to 75 Volts Peak Pulse Power - 0.2 W SURFACE MOUNT ZENER DIODE Features  Total power dissipation: Max. 200mW.  Wide zener reverse voltage range 2.0V to 75V.  Small plastic package suitable for surface mounted design.  Tolerance approximately±5% PINNING PIN DESCRIPTION 1 Cathode 2 Anode Mechanical Data 2 Case : JEDEC SOD-323 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.00019 ounce, 0.00548 grams 1 Top View Simplified outline SOD-323 and symbol Ordering Information Marking Type No. See table 2 BZT52C2V0S-BZT52C75S MAXIMUM RATING SOD-323 @ Ta=25℃ unless otherwise specified Parameter Forward Voltage Package Code @ IF=10mA Power Dissipation Typical thermal resistance juncting to ambient (1) Symbol Value Unit VF 0.9 V Pd 200 mW RθJA 417 ℃/W Junction temperature Tj -55-150 ℃ Storage temperature range Tstg -55-150 ℃ Fig.1 Maximum Continuous Power Derating 0.35 Power Dissipation ( W ) 0.3 0.25 0.2 0.15 0.1 0.05 0.0 25 50 75 100 125 150 T c ,Case Temperature (°C) 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） DN:T19819A0 https://www.microdiode.com Rev:2019A0 Page :1 BZT52C2V0S THRU BZT52C75S Zener Voltage - 2 to 75 Volts Peak Pulse Power - 0.2 W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Dynamic Impedance Zener Voltage Range （1） Type Marking BZT52C2V0S WY V ZT（at I ZT） Reverse Current I ZT Z ZT（at I ZT） IR at V R Min（V） Nom（V） Max（V） (mA) Max (Ω) Max（μA） （V） 1.8 2 2.15 5 100 120 0.5 BZT52C2V2S WZ 2.08 2.2 2.33 5 100 120 0.7 BZT52C2V4S WX 2.28 2.4 2.56 5 100 120 1 BZT52C2V7S W1 2.5 2.7 2.9 5 110 120 1 BZT52C3V0S W2 2.8 3 3.2 5 120 50 1 BZT52C3V3S W3 3.1 3.3 3.5 5 130 20 1 BZT52C3V6S W4 3.4 3.6 3.8 5 130 10 1 BZT52C3V9S W5 3.7 3.9 4.1 5 130 5 1 BZT52C4V3S W6 4 4.3 4.6 5 130 5 1 BZT52C4V7S W7 4.4 4.7 5 5 130 2 1 BZT52C5V1S W8 4.8 5.1 5.4 5 130 2 1.5 BZT52C5V6S W9 5.2 5.6 6 5 80 1 2.5 BZT52C6V2S WA 5.8 6.2 6.6 5 50 1 3 5 30 0.5 3.5 30 0.5 4 5 BZT52C6V8S WB 6.4 6.8 7.2 BZT52C7V5S WC 7 7.5 7.9 5 BZT52C8V2S WD 7.7 8.2 8.7 5 30 0.5 BZT52C9V1S WE 8.5 9.1 9.6 5 30 0.5 6 BZT52C10S WF 9.4 10 10.6 5 30 0.1 7 BZT52C11S WG 10.4 11 11.6 5 30 0.1 8 BZT52C12S WH 11.4 12 12.7 5 35 0.1 9 BZT52C13S WI 12.4 13 14.1 5 35 0.1 10 BZT52C15S WJ 13.8 15 15.6 5 40 0.1 11 BZT52C16S WK 15.3 16 17.1 5 40 0.1 12 BZT52C18S WL 16.8 18 19.1 5 45 0.1 13 BZT52C20S WM 18.8 20 21.2 5 50 0.1 15 BZT52C22S WN 20.8 22 23.3 5 55 0.1 17 BZT52C24S WO 22.8 24 25.6 5 60 0.1 19 BZT52C27S WP 25.1 27 28.9 2 70 0.1 21 BZT52C30S WQ 28 30 32 2 80 0.1 23 BZT52C33S WR 31 33 35 2 80 0.1 25 BZT52C36S WS 34 36 38 2 90 0.1 27 BZT52C39S WT 37 39 41 2 100 0.1 30 BZT52C43S WU 40 43 46 2 130 0.1 33 BZT52C47S WV 44 47 50 2 150 0.1 36 BZT52C51S WW 48 51 54 2 180 0.1 39 BZT52C56S XW 52 56 60 2 200 0.1 43 BZT52C62S 6E 58 62 66 2 215 0.1 47 BZT52C68S 6F 64 68 72 2 240 0.1 52 BZT52C75S 6H 70 75 79 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) https://www.microdiode.com Rev:2019A0 Page :2 BZT52C2V0S THRU BZT52C75S Zener Voltage - 2 to 75 Volts Peak Pulse Power - 0.2 W PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 S O D - 3 2 3 me m e c h a n i c a l da data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm ( mil) https://www.microdiode.com Rev:2019A0 Page :3