XB5608A
概述
单节锂离子/锂聚合物可充电电池组保护芯片
特性
XB5608A 产品 是单节锂离子/锂聚合物可
充 电电池组保护的高集成度解决方案。
XB5608A 包括了先进的功率 MOSFET,高
精 度的电压检测电路和延时电路。
XB5608A 使用一个超薄 SOT23-5 封装和
只 有一个外部器件,使电池的保护电路
空间 最小化。这使得该器件非常适合应
用于空 间限制得非常小的可充电电池组
应用。
XB5608A 具有过充,过放,过流,过温
及 短路等所有的电池所需保护功能,并
且工 作时功耗非常低。
该芯片不仅仅是为手机而设计,也适用于
一切需要锂离子或锂聚合物可充电电池长
时间供电的各种信息产品的应用场合,如
智能手环、手表、蓝牙耳机等产品。
应用
•充电器反向连接保护
•电池反向连接保护
•集成等效 16mΩ 的先进的功率 MOSFET
•超薄封装:SOT23-5
•只有一个外部电容器
•过温保护
•过充电流保护
•2 段过流保护
-过放电流 1
-负载短路电流
•充电器检测功能
•0V 电池充电功能
•延时时间内部设定
•高精度电压检测
•低静态耗电流 工作状
态:3.9μA 典型值. 过放模式
下:2.2μA 典型值.
•兼容 RoHS 和无铅标准·
单节锂离子电池
聚合物锂电池
图一、典型应用电路
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XB5608A
订货信息
产品型号
封装
过充电压
过充恢复电压
过放电压
[VCU] (V)
[VCL] (V)
[VDL] (V)
过放恢复电压 过流检测电流
[IOV1] (A)
[VDR] (V)
SO
4.30
4.10
2.40
T
23-5
注意: “YW”是生产日期, “Y” 是年份, “W” 是周号
XB5608A
3.0
9
丝印
5608AYW (note)
管脚图
图二、引脚配置
管脚描述
XB5608A 管脚号
管脚名称
1,2
GND
接地端,接电池芯负极
3
VDD
IC 供电端
4,5
VM
电池组的负端。内部 FET 开关连接到 GND
管脚描述
绝对最大额定值
(注意: 为保护器件,不允许超过以下最大额定值. 长时间工作在最大额定值条件下可能会影响产品的可靠性.)
参数
数值
单位
VDD 输入电压
-0.3 to 6
V
VM 输入电压
-6 to 10
V
工作环境温度
-40 to 85
°C
最大结温
125
°C
储存温度
-55 to 150
°C
300
°C
引脚温度 ( 焊接, 10 秒)
-2-
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XB5608A
环境温度 25°C 时的功耗
0.4
封装热限 (结温) θJA
250
W
°C/W
封装热阻 (结到环境) θJC
130
°C/W
ESD
2000
V
电气特性
除非特殊说明,所有指标均为 T=25°C 条件下
参数
标识
测试条件
最小值
典型值
最大值
单位
检测电压
过充检测电压
过充恢复电压
4.25
4.30
4.35
4.05
4.10
4.15
V
VCU
VCL
V
2.3
2.4
2.5
过放检测电压
VDL
过放恢复电压
VDR
过放电流 1 检测电流
*IIOV1
VDD=3.6V
负载短路检测电流
*ISHORT
VDD=3.6V
45
正常工作功耗
IOPE
VDD=3.6V
VM =0V
3.9
6
μA
关机功耗
IPDN
VDD=2.0V
VM pin 悬空
2.2
4
μA
VM 和 VDD 间内部电阻
*RVMD
VDD=2.0V
VM pin 悬空
320
VM 和 GND 间内部电阻
*RVMS
VDD=3.6V
VM=1.0V
25
*RSS(ON)
VDD=3.6V
V
2.9
3.0
3.1
V
检测电流
A
9
A
电流功耗
VM 端电阻
kΩ
kΩ
FET 导通电阻
FET 等效导通电阻
IVM =1.0A
16
mΩ
过温保护
过温保护温度
*TSHD+
120
过温保护恢复温度
*TSHD-
100
oC
检测延时
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XB5608A
过充检测延时
tCU
130
200
mS
过放检测延时
tDL
40
60
mS
过流检测延时
*tIOV
VDD=3.6V
8
mS
短路检测延时
*tSHOR
VDD=3.6V
200
uS
T
注:*—该参数设计保证,成测不测
Figure 3. Functional Block Diagram
FUNCTIONAL DESCRIPTION
The XB5608A monitors the voltage and
current of a battery and protects it from
being damaged due to overcharge voltage,
overdischarge voltage, overdischarge
current, and short circuit conditions by
disconnecting the battery from the load
or charger. These functions are required in
order to operate the battery cell within
specified limits.
The device requires only one external
capacitor. The MOSFET is integrated and
its RSS(ON) is as low as 16mΩ typical.
Normal operating mode
If no exception condition is detected,
charging and discharging can be carried
out freely. This condition is called the
normal operating mode.
Overcharge Condition
When the battery voltage becomes higher
than the overcharge detection voltage (VCU)
during charging under normal condition
and the state continues for the overcharge
detection delay time (tCU) or longer, the
XB5608A turns the charging control FET
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XB5608A
overcurrent 2 work. Detection of load shortcircuiting works regardless of the battery voltage.
off to stop charging. This condition is called
the overcharge condition. The overcharge
condition is released in the following two
cases:
1, When the battery voltage drops below
the overcharge release voltage (VCL), the
XB5608A turns the charging control FET
on and returns to the normal condition.
2, When a load is connected and
discharging starts, the XB5608A turns the
charging control FET on and returns to the
normal condition. The release mechanism
is as follows: the discharging current flows
through an internal parasitic diode of the
charging FET immediately after a load is
connected and discharging starts, and the
VM pin voltage increases about 0.7 V
(forward voltage of the diode) from the
GND pin voltage momentarily. The
XB5608A detects this voltage and releases
the overcharge condition. Consequently, in
the case that the battery voltage is equal to
or lower than the overcharge detection
voltage (VCU), the XB5608A returns to the
normal condition immediately, but in the
case the battery voltage is higher than the
overcharge detection voltage (VCU),the chip
does not return to the normal condition
until the battery voltage drops below the
overcharge detection voltage (VCU) even if
the load is connected. In addition, if the VM
pin voltage is equal to or lower than the
overcurrent 1 detection voltage when a
load is connected and discharging starts,
the chip does not return to the normal
condition.
Overdischarge Condition
When the battery voltage drops below the
overdischarge detection voltage (VDL)
during discharging under normal condition
and it continues for the overdischarge
detection delay time (tDL) or longer, the
XB5608A turns the discharging control
FET off and stops discharging. This
condition is called overdischarge condition.
After the discharging control FET is turned
off, the VM pin is pulled up by the RVMD
resistor
between VM and VDD in XB5608A.
Meanwhile when VM is bigger than 1.5
V (typ.) (the load short-circuiting detection
voltage), the current of the chip is reduced
to the power-down current (IPDN). This
condition is called power-down condition.
The VM and VDD pins are shorted by the
RVMD resistor in the IC under the
overdischarge and power-down conditions.
The power-down condition is released
when a charger is connected and the
potential difference between VM and VDD
becomes 1.3 V (typ.) or higher (load shortcircuiting detection voltage). At this time,
the FET is still off. When the battery
voltage becomes the overdischarge
detection voltage (VDL) or higher (see note),
the XB5608A turns the FET on and
changes to the normal condition from the
overdischarge condition.
Remark If the VM pin voltage is no less than the
charger detection voltage (VCHA), when the battery
under overdischarge condition is connected to a
charger, the overdischarge condition is released
(the discharging control FET is turned on) as usual,
provided that the battery voltage reaches the
overdischarge release voltage (VDU) or higher.
Remark If the battery is charged to a voltage higher
than the overcharge detection voltage (VCU) and
the battery voltage does not drops below the
overcharge detection voltage (VCU) even when a
heavy load, which causes an overcurrent, is
connected, the overcurrent 1 and overcurrent 2 do
not work until the battery voltage drops below the
overcharge detection voltage (VCU). Since an actual
battery has, however, an internal impedance of
several dozens of mΩ, and the battery voltage
drops immediately after a heavy load which causes
an overcurrent is connected, the overcurrent 1 and
Overcurrent Condition
When the discharging current becomes
equal to or higher than a specified value
(the VM pin voltage is equal to or higher
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XB5608A
than the overcurrent detection voltage)
during discharging under normal condition
and the state continues for the overcurrent
detection delay time or longer, the
XB5608A turns off the discharging control
FET to stop discharging. This condition is
called overcurrent condition. (The
overcurrent
includes overcurrent, or load shortcircuiting.)
The VM and GND pins are shorted
internally by the RVMS resistor under the
overcurrent condition. When a load is
connected, the VM pin voltage equals the
VDD voltage due to the load.
The overcurrent condition returns to the
normal condition when the load is released
and the impedance between the B+ and Bpins becomes higher than the automatic
recoverable impedance. When the load is
removed, the VM pin goes back to the
GND potential since the VM pin is shorted
the GND pin with the RVMS resistor.
Detecting that the VM pin potential is lower
than the overcurrent detection voltage
(VIOV), the IC returns to the normal
condition.
overdischarge detection voltage and the
overcharge detection delay time (tCU)
elapses.
Abnormal charge current detection is
released when the voltage difference
between VM pin and GND pin becomes
lower than the charger detection voltage
(VCHA) by separating the charger. Since the
0 V battery charging function has higher
priority than the abnormal charge current
detection function, abnormal charge
current may not be detected by the product
with the 0 V battery charging function while
the battery voltage is low.
Load Short-circuiting condition
If voltage of VM pin is equal or below
short circuiting protection voltage (VSHORT),
the XB5608A will stop discharging and
battery is disconnected from load. The
maximum delay time to switch current off is
tSHORT. This status is released when voltage
of VM pin is higher than short protection
voltage (VSHORT), such as when
disconnecting the load.
Delay Circuits
The detection delay time for overdischarge
current 2 and load short-circuiting starts
when overdischarge current 1 is detected.
As soon as overdischarge current 2 or load
short-circuiting is detected over detection
delay time for overdischarge current 2 or
load short- circuiting, the XB5608A stops
discharging. When battery voltage falls
below overdischarge detection voltage due
to overdischarge current, the XB5608A stop
discharging by overdischarge current
detection. In this case the recovery of battery
voltage is so slow that if battery voltage
after overdischarge voltage detection delay
time is still lower than overdischarge
detection voltage, the XB5608A shifts to
power-down.
Abnormal Charge Current Detection
If the VM pin voltage drops below the
charger detection voltage (VCHA) during
charging under the normal condition and it
continues for the overcharge detection
delay time (tCU) or longer, the XB5608A
turns the charging control FET off and
stops charging. This action is called
abnormal charge current detection.
Abnormal charge current detection works
when the discharging control FET is on
and the VM pin voltage drops below the
charger detection voltage (VCHA). When an
abnormal charge current flows into a
battery in the overdischarge condition, the
XB5608A consequently turns the charging
control FET off and stops charging after
the battery voltage becomes the
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XB5608A
is turned on to start charging. At this time,
the discharging control FET is off and the
charging current flows through the internal
parasitic diode in the discharging control
FET. If the battery voltage becomes equal
to or higher than the overdischarge release
voltage (VDU), the normal condition returns.
Note
(1) Some battery providers do not recommend
charging of completely discharged batteries. Please
refer to battery providers before the selection of 0 V
battery charging function.
(2) The 0V battery charging function has higher
priority than the abnormal charge current detection
function. Consequently, a product with the 0 V
battery charging function charges a battery and
abnormal charge current cannot be detected during
the battery voltage is low (at most 1.8 V or lower).
Figure 4. Overcurrent delay time
0V Battery Charging Function (1) (2) (3)
This function enables the charging of a
connected battery whose voltage is 0 V by
self-discharge. When a charger having 0 V
battery start charging charger voltage
(V0CHA) or higher is connected between B+
and B- pins, the charging control FET gate
is fixed to VDD potential. When the voltage
between the gate and the source of the
charging control FET becomes equal to or
higher than the turn-on voltage by the
charger voltage, the charging control FET
(3) When a battery is connected to the IC for
the first time, the IC may not enter the normal
condition in which discharging is possible. In
this case, set the VM pin voltage equal to the
GND voltage (short the VM and GND pins or
connect a charger) to enter the normal
condition.
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XB5608A
TIMING CHART
1.
Overcharge and overdischarge detection
Figure5-1 Overcharge and Overdischarge Voltage Detection
2.
Overdischarge current detection
Figure5-2 Overdischarge Current Detection
Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition
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XB5608A
3.
Charger Detection
Figure5-3 Charger Detection
4.
Abnormal Charger Detection
Figure5-4 Abnormal Charger Detection
Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)
Overcurrent condition
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XB5608A
TYPICAL APPLICATION
As shown in Figure 6, the bold line is the high density current path which must be kept as
short as possible. For thermal management, ensure that these trace widths are adequate.C1&
R1 is a decoupling capacitor & resistor which should be placed as close as possible to
XB5608A.
Fig 6 XB5608A in a Typical Battery Protection Circuit
Precautions
• Pay attention to the operating conditions for input/output voltage and load current so that the
power loss in XB5608A does not exceed the power dissipation of the package.
• Do not apply an electrostatic discharge to this XB5608A that exceeds the performance ratings of the
built-in electrostatic protection circuit.
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XB5608A
PACKAGE OUTLINE
SOT23-5 PACKAGE OUTLINE AND DIMENSIONS
SYMB
OL
DIMENSION
DIMENSION
IN
IN INCHES
MILIMETERS
MIN
MAX
A
1.050
1.250
0.041 0.049
A1
0.000
0.100
0.000 0.004
A2
1.050
1.150
0.041 0.045
b
0.300
0.400
0.012 0.016
c
0.100
0.200
0.004 0.008
D
2.820
3.020
0.111 0.119
E
1.500
1.700
0.059 0.067
E1
2.650
2.950
0.104 0.116
e
e1
L
0.950 TYP
1.800
2.000
0.700 REF
L1
0.300
0.600
θ
0°
8°
MIN
MAX
0.037 TYP
0.071 0.079
0.028 REF
0.012 0.024
0°
8°
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XB5608A
DISCLAIMER
The information described herein is subject to change without notice.
Xysemi Inc. is not responsible for any problems caused by circuits or
diagrams described herein whose ralated industial properties,patents,or
other rights belong to third parties. The application circuit examples
explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
When the products described herein are regulated products subject to the
Wassenaar Arrangement or other arrangements, they may not be exported
without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or
reproduction or copying without express permission of Xysemi Inc. is
strictly prohibited.
The products described herein cannot be used as part of any device or
equipment affecting the human body,such as exercise equipment ,medical
equipment, security systems, gas equipment,or any aparatus installed in
airplanes and other vehicles,without prior written pemission of Xysemi Inc.
Although Xysemi Inc. exerts the greatest possible effort to ensure high
quality and reliability, the failure or malfunction of semiconductor may
occur. The use of these products should therefore give thorough
consideration to safty design,including redundancy, fire-prevention
measure and malfunction prevention, to prevent any accidents,fires,or
community damage that may ensue.
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