BT139-800E,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -2 20A B BT139-800E 4Q Triac 27 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (T0-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • • • • • Direct triggering from low power drivers and logic ICs High blocking voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications • • General purpose phase control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 800 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 155 A IT(RMS) RMS on-state current - - 16 A - 2.5 10 mA - 4 10 mA - 5 10 mA full sine wave; Tmb ≤ 99 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT139-800E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number BT139-800E BT139-800E Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 2 / 13 BT139-800E NXP Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; Min Max Unit - 800 V - 16 A - 155 A - 170 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 120 A s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs 2 2 T2+ G+ IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- GIT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C BT139-800E Product data sheet over any 20 ms period All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 3 / 13 BT139-800E NXP Semiconductors 4Q Triac 001aab090 50 001aab091 20 IT(RMS) (A) 40 IT(RMS) (A) (1) 15 30 10 20 5 10 0 10- 2 10- 1 0 - 50 1 10 surge duration (s) f = 50 Hz; Tmb = 99 °C Fig. 1. 0 50 100 Tmb (°C) 150 (1) Tmb = 99 °C RMS on-state current as a function of surge duration; maximum values Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values 001aab093 25 Ptot (W) 20 95 Tmb(max) (°C) 101 α= 180 120 90 15 107 60 30 10 α 5 0 119 α 0 5 10 15 113 IT(RMS) (A) 125 20 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values. BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 4 / 13 BT139-800E NXP Semiconductors 4Q Triac 001aab102 160 ITSM (A) IT ITSM 120 T t Tj(initial) = 25 °C max 80 40 0 1 102 10 103 n f = 50 Hz; n = number of cycles Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 001aab092 103 ITSM (A) 102 (1) IT (2) 10 10- 2 ITSM T t Tj(initial) = 25 °C max 10- 1 1 10 T (ms) 102 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 5 / 13 BT139-800E NXP Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 1.7 K/W full cycle; Fig. 6 - - 1.2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 001aab098 10 Zth(j-mb) (K/W) (1) 1 (2) 10- 1 PD 10- 2 t tp 10- 3 10- 5 10- 4 10- 3 10- 2 10- 1 1 tp (s) 10 (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 6 / 13 BT139-800E NXP Semiconductors 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - 3.2 30 mA - 16 40 mA - 4 30 mA - 5.5 40 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 4 45 mA VT on-state voltage IT = 20 A; Tj = 25 °C; Fig. 10 - 1.2 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 800 V; Tj = 125 °C - 0.1 0.5 mA VDM = 536 V; Tj = 125 °C; (VDM = 67% - 50 - V/µs - 2 - µs Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/µs BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 7 / 13 BT139-800E NXP Semiconductors 4Q Triac 001aab448 3 IGT (Tj) IGT(25°C) 001aab100 3 IL IL(25°C) (1) (2) 2 2 (3) (4) 1 0 - 50 1 0 50 100 Tj (°C) 0 - 50 150 (1) T2- G+ (2) T2+ G(3) T2- G(4) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 001aab099 3 001aab094 50 IT (A) 40 IH IH(25°C) (1) (2) (3) 2 30 20 1 10 0 - 50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 1.195 V; Rs = 0.018 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 8 / 13 BT139-800E NXP Semiconductors 4Q Triac 001aab101 1.6 VGT VGT(25°C) 1.2 0.8 0.4 - 50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 9 / 13 BT139-800E NXP Semiconductors 4Q Triac 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 10 / 13 BT139-800E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. BT139-800E Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 11 / 13 BT139-800E NXP Semiconductors 4Q Triac grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 12 / 13 BT139-800E NXP Semiconductors 4Q Triac 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 7 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 September 2013 BT139-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013. All rights reserved 13 / 13