BT139X-600E,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -2 20F BT139X-600E 4Q Triac 1 May 2015 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT186A "full pack" plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended for gate triggering by low power drivers and microcontrollers. 2. Features and benefits • • • • • • Direct triggering from low power drivers and logic ICs High blocking voltage capability Isolated package Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications • • General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 155 A IT(RMS) RMS on-state current - - 16 A - 2.5 10 mA - 4 10 mA full sine wave; Th ≤ 38 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT139X-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; - 5 10 mA - 11 25 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number BT139X-600E BT139X-600E Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 BT139X-600E NXP Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 38 °C; Fig. 1; Fig. 2; Min Max Unit - 600 V - 16 A - 155 A - 170 A Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I t I2t for fusing tp = 10 ms; SIN - 120 A s dIT/dt rate of rise of on-state current IG = 20 mA; T2+ G+ - 50 A/µs IG = 20 mA; T2+ G- - 50 A/µs IG = 50 mA; T2- G+ - 10 A/µs IG = 20 mA; T2- G- - 50 A/µs 2 2 IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period aaa-009683 50 IT(RMS) (A) 40 001aab095 20 IT(RMS) (A) 38 °C 15 30 10 20 5 10 0 10-2 10-1 f = 50 Hz; Th = 38 °C Fig. 1. 0 -50 1 10 surge duration (s) Fig. 2. RMS on-state current as a function of surge duration; maximum values BT139X-600E Product data sheet 50 100 Th (°C) 150 RMS on-state current as a function of heatsink temperature; maximum values All information provided in this document is subject to legal disclaimers. 1 May 2015 0 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 BT139X-600E NXP Semiconductors 4Q Triac 001aab096 25 Ptot (W) 20 conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 15 25 Th(max) (°C) α = 180° α 45 120° 90° α 65 60° 30° 10 85 5 105 0 0 5 10 15 125 20 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 001aab092 103 ITSM (A) 102 (1) ITSM IT t (2) tp 10 10-2 Tj(init) = 25 °C max 10-1 1 10 Tp (ms) 102 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 BT139X-600E NXP Semiconductors 4Q Triac 001aab102 160 ITSM (A) 120 80 IT 40 0 ITSM t 1/f Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 BT139X-600E NXP Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full or half cycle with heatsink compound; Fig. 6 - - 4 K/W full or half cycle without heatsink compound; Fig. 6 - - 5.5 K/W thermal resistance from junction to ambient in free air - 55 - K/W Rth(j-a) 001aab097 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 BT139X-600E NXP Semiconductors 4Q Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - 3.2 30 mA - 16 40 mA - 4 30 mA - 5.5 40 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 4 45 mA VT on-state voltage IT = 20 A; Tj = 25 °C; Fig. 10 - 1.2 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; (VDM = 67% - 50 - V/µs - 2 - µs Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 20 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/µs BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 BT139X-600E NXP Semiconductors 4Q Triac 001aab089 3 IGT(Tj) IGT(25°C) IL IL(25°C) (1) (2) 2 001aab100 3 2 (3) (4) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2+ G+ (2) T2+ G(3) T2- G(4) T2- G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 001aab099 3 001aab094 50 IT (A) IH IH(25°C) (1) (2) (3) 40 2 30 20 1 10 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 1.195 V; Rs = 0.018 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 BT139X-600E NXP Semiconductors 4Q Triac 001aab101 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 BT139X-600E NXP Semiconductors 4Q Triac 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 12. Package outline TO-220F (SOT186A) BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 BT139X-600E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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BT139X-600E Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 13 BT139X-600E NXP Semiconductors 4Q Triac grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 13 BT139X-600E NXP Semiconductors 4Q Triac 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Isolation characteristics ........................................6 10 Characteristics ....................................................... 7 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 May 2015 BT139X-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13