2SA733P

2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Power Dissipation Ptot 250 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group C C Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 40 70 120 200 350 - 80 140 240 400 700 - -ICBO - - 100 nA -IEBO - - 100 nA Collector Base Breakdown Voltage at -IC = 100 µA -V(BR)CBO 60 - - V Collector Emitter Breakdown Voltage at -IC = 10 mA -V(BR)CEO 50 - - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA -VCE(sat) - - 0.3 V Base Emitter On Voltage at -VCE = 6 V, -IC = 1 mA -VBE(on) 0.5 - 0.8 V Gain Bandwidth Product at -VCE = 6 V, -IC = 10 mA fT 50 - - MHz Cob - 2.8 - pF Collector Base Cutoff Current at -VCB = 60 V Emitter Base Cutoff Current at -VEB = 5 V R O Y P L Collector Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated : 17/08/2016 Rev:01 2SA733 I C - VBE Total power dissipation vs. ambient temperature -200 VCE=-6V 300 -100 Free air Ta=75 C IC - mA P tot (mW) 250 200 150 50 C -10 25 C 0 C -25 C -1 100 50 0 25 75 50 100 -0.1 -0.4 -0.5 150 125 Tamb ( C) Collector current vs. collector emitter voltage -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -100 -80 -10 -45 -40 -8 -0.8 -35 -30 -0.6 -0.4 -40 -6 Ic - mA -60 Ic - mA -1 VBE , V Collector current vs. collector emitter voltage -25 -20 -4 -15 I B =-0.2mA -10 -20 -2 0 0 0 0 -0.2 -0.9 -0.8 -0.7 -0.6 -0.4 -0.6 -0.8 -1.0 IB=-5 A -10 -20 VCE, V -30 -40 -50 VCE, V hFE - I C hFE - I C 1000 1000 VCE=-6V Ta=75 C 50 C -1V 100 hFE hFE VCE=-6V 10 100 25 C -25 C 0 C 10 -0.1 -10 -1 -100 -0.1 I C, mA -10 -1 -100 I C, mA SEMTECH ELECTRONICS LTD. ® Dated : 17/08/2016 Rev:01 2SA733 VCE(sat), VBE(sat) - I C fT - I E VBE(sat) 500 VCE= -6V fT - MHz -1V -0.1 VCE(sat) IC/IB=10 -0.01 -1 100 IC/IB=10 10 1 -100 -10 I E, mA Normalized h-parameters vs. emitter current Normalized h-parameters vs. collector emitter voltage 100 100 VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 Normalized h parameters Normalized h parameters 100 10 I C, mA hfe=20s, hoe=28 s 10 hoe hre hfe hie 1 0.1 -0.1 hfe hre hoe hie -1 -10 -100 VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 hfe=20s, hoe=28 s hoe 10 hie hre 1 hfe hfe hoe 0.1 0.1 hre hie 1 10 100 IE, mA VCE, V Cob - VCB 100 f=1MHz Cob - pF VCE(sat), VBE(sat) - V -1 10 1 -1 -10 -100 VCB, V SEMTECH ELECTRONICS LTD. ® Dated : 17/08/2016 Rev:01