HSBA3014

HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS 30 V RDS(ON),max 12 mΩ ID 50 A PRPAK5X6 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 30 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 10 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 8 A IDM Pulsed Drain Current2 100 A EAS Single Pulse Avalanche Energy3 24.2 mJ IAS Avalanche Current 22 A PD@TC=25℃ Total Power Dissipation4 41.7 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 62 ℃/W --- 3 ℃/W 1 HSBA3014 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=15A --- --- 12 VGS=4.5V , ID=10A --- --- 16.5 1.0 --- 2.5 V --- -5.08 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 ---  Qg Total Gate Charge (4.5V) --- 9.82 --- Qgs Gate-Source Charge --- 4.2 --- Qgd Gate-Drain Charge --- 3.6 --- Td(on) VDS=15V , VGS=4.5V , ID=15A --- 4 --- Rise Time VDD=15V , VGS=10V , RG=3.3 --- 8 --- Turn-Off Delay Time ID=15A --- 31 --- Fall Time --- 4 --- Ciss Input Capacitance --- 940 --- Coss Output Capacitance --- 131 --- Crss Reverse Transfer Capacitance --- 108 --- Min. Typ. Max. Unit --- --- 50 A --- --- 100 A --- --- 1 V --- 8.5 --- nS --- 2.2 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ If=20A,dI/dt=100A/us, TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA3014 N-Ch 30V Fast Switching MOSFETs Typical Characteristics 12 22 VGS=10V VGS=7V ID=12A VGS=5V VGS=4.5V 8 18 6 RDSON (mΩ) ID Drain Current (A) 10 VGS=3V 4 14 2 0 10 0 0.25 0.5 0.75 VDS , Drain-to-Source Voltage (V) 1 2 Fig.1 Typical Output Characteristics 8 10 10 ID=12A VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 8 6 4 2 0 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 0 1.2 Fig.3 Forward Characteristics of Reverse 7.5 15 22.5 QG , Total Gate Charge (nC) 30 Fig.4 Gate-charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 6 VGS (V) Fig.2 On-Resistance vs. G-S Voltage 12 IS Source Current(A) 4 1 1.5 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature ( ℃) 175 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSBA3014 N-Ch 30V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 10us 100us Capacitance (pF) 10.00 Ciss 1000 ID (A) 1ms 10ms 100ms 1.00 Coss DC 100 Crss 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSBA3014 N-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSBA3014 www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5