HSBA3056

HSBA3056 N-Ch 30V Fast Switching MOSFETs Applications ⚫ ⚫ Product Summary Power Management in Desktop Computer or DC/DC Converters Isolated DC/DC Converters in Telecom and Industrial. VDS 30 V RDS(ON),typ 3.2 mΩ ID 73 A Features ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology PRPAK5*6 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 73 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 46 A IDM Pulsed Drain Current2 120 A EAS Single Pulse Avalanche Energy3 80 mJ IAS Avalanche Current 40 A PD@TC=25℃ Total Power Dissipation4 38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 55 ℃/W --- 3.3 ℃/W 1 HSBA3056 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.021 --- V/℃ VGS=10V , ID=20A --- 3.2 3.9 VGS=4.5V , ID=15A --- 4.9 6.1 1.0 1.7 2.2 V --- -5.73 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S Rg Gate Resistance VDS=10V , VGS=0V , f=1MHz 0.7 1.65 2.6  Qg Total Gate Charge (4.5V) --- 14.6 --- Qgs Gate-Source Charge --- 5.8 --- Qgd Gate-Drain Charge --- 3.5 --- Td(on) VDS=15V , VGS=4.5V , ID=20A --- 7.5 --- Rise Time VDD=15V , VGS=10V , RG=3 --- 20.1 --- Turn-Off Delay Time ID=20A --- 21.6 --- Fall Time --- 4.4 --- Ciss Input Capacitance --- 1476 --- Coss Output Capacitance --- 556 --- Crss Reverse Transfer Capacitance --- 70 --- Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 30 A Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA3056 N-Ch 30V Fast Switching MOSFETs Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-charge Characteristics diode Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSBA3056 N-Ch 30V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform waveform www.hs-semi.cn Ver 2.0 4 HSBA3056 N-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSBA3056 www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5