TMA7N65H

TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES l Fast switching l 100% avalanche tested l Improved dv/dt capability APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N65H TO-220F A7N65H TMP7N65H TO-220 P7N65H TMD7N65H TO-252 D7N65H TMU7N65H TO-251 U7N65H Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Value TO-220F TO-251 TO-252 TO-220 Unit VDSS 650 V ID 7 A IDM 28 A VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 198 mJ Avalanche Current (note1) IAR 3.5 A Repetitive Avalanche Energy (note1) EAR 40 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 63 TJ, Tstg 97 W -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220F TO-251 TO-252 Thermal Resistance, Junction-to-Case RthJC 1.98 1.29 Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 V3.0 1 TO-220 Unit ºC/W www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- V IDSS VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 1 μA IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 3.5A -- 1.1 1.35 Ω -- 891 -- -- 110 -- -- 14 -- -- 22 -- -- 4.3 -- Static Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 13 -- Turn-on Delay Time td(on) -- 15 -- Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 80 -- -- 35 -- -- -- 7.0 -- -- 28 Turn-off Fall Time VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 520V, ID = 7A, VGS = 10V VDD = 325V, ID = 7A, RG = 25 Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 7A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr -- 300 -- ns Reverse Recovery Charge Qrr VGS = 0V,IS = 7A, diF/dt =100A /μs -- 4.1 -- μC TC = 25 ºC A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% V3.0 2 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Body Diode Forward Voltage 20V 10V 8V 7V 6V 5V IS, Source Current (A) ID, Drain Current (A) Figure 1. Output Characteristics (TJ = 25ºC) VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Figure 4. BVDSS Variation vs. Temperature ID, Drain Current (A) BVDSS (Normalized) Figure 3. Drain Current vs. Temperature TJ, Case Temperature (ºC) TJ, Junction Temperature (ºC) Figure 6. On-Resistance vs. Temperature RDS(on), On-Resistance (Normalized) Figure 5. Transfer Characteristics ID, Drain Current (A) TJ = 25ºC TJ = 150ºC VGS, Gate-to-Source Voltage (V) V3.0 VGS = 0V ID = 250μA VGS = 10V ID=3.5A TJ, Junction Temperature (ºC) 3 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Capacitance Figure 8. Gate Charge VGS, Gate-to-Source Voltage (V) 104 Capacitance (pF) Ciss 103 Coss 102 Crss 101 VGS = 0V f = 1MHz VDD = 130V VDD = 325V VDD = 520V 100 VDS, Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Transient Thermal Impedance TO-220,TO-251,TO-252 101 TO-220F 101 ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) Figure 10. Transient Thermal Impedance 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-7 10-6 10-5 10-4 10-3 10-2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-1 Tp, Pulse Width (s) V3.0 100 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V3.0 5 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company TO-220 V3.0 6 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company TO-220F V3.0 7 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company TO-252 V3.0 8 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company TO-251 V3.0 9 www.tsinghuaicwx.com TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Tongfang does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Tongfang. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless. Customers using or selling Wuxi Tongfang products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Tongfang for any damages arising or resulting from such use or sale. Wuxi Tongfang disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Tongfang’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Tongfang Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Tongfang products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Wuxi Tongfang believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V3.0 10 www.tsinghuaicwx.com