AR0521D5

AR0521D5 1-Line Ultra Low Capacitance Bi-directional TVS Diode Description Mechanical Characteristics The AR0521D5 is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The AR0521D5 has an ultra-low capacitance with a typical value at 0.3pF, and complies with the IEC 61000-4-2 (ESD) with ±25kV air and ±22kV contact discharge. It is assembled into a SOD-523 leadfree package. The small size, ultra-low capacitance and high ESD surge protection make AR0521D5 an ideal choice to protect cell phone, digital visual interfaces and other high speed ports.  Package: SOD-523  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below  Marking Information: See Below Features  Ultra low capacitance: 0.3pF typical  Ultra low leakage: nA level  Operating voltage: 5V  Low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±22kV – IEC61000-4-5 (Lightning) 4A (8/20μs)  Applications  Cellular Handsets and Accessories  Display Ports  MDDI Ports  USB Ports  Digital Visual Interface (DVI)  PCI Express and Serial SATA Ports Marking Information 25= Device Marking Code RoHS Compliant Ordering Information Dimensions and Pin Configuration Circuit and Pin Schematic Revision, 12/2017 1 of 4 Part Number Packaging Reel Size AR0521D5 3000/Tape & Reel 7 inch AR0521D5 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 100 W Peak Pulse Current (8/20µs) IPP 4 A ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±22 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR 6.5 Max Unit Test Condition 5 V 9.5 V IT = 1mA 0.2 μA VRWM = 5V Reverse Leakage Current IR Clamping Voltage VC 12 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 25 V IPP = 4A (8 x 20µs pulse) Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz Revision, 12/2017 0.02 0.3 2 of 4 kV AR0521D5 Typical Performance Characteristics (TA=25°C unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve Note：Data is taken with a 10x attenuator ESD Clamping Voltage 8 X 20μs Pulse Waveform 8 kV Contact per IEC61000−4−2 Revision, 12/2017 3 of 4 AR0521D5 SOD-523 Package Outline Drawing SY M DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX A 0.51 -- 0.77 0.020 -- 0.031 A1 0.50 -- 0.70 0.020 -- 0.028 b 0.25 -- 0.35 0.010 -- 0.014 c 0.08 -- 0.15 0.003 -- 0.006 D 0.75 -- 0.85 0.030 -- 0.033 E 1.10 -- 1.30 0.043 -- 0.051 E1 1.50 -- 1.70 0.059 E2 L Θ 0.20REF 0.01 -7°REF 0.067 0.008REF 0.07 0.001 -- 0.003 7°REF Suggested Land Pattern Unit：mm Contact Information Applied Power Microelectronics Co., Ltd. Website: http://www.appliedpowermicro.com Email: sales@appliedpowermicro.com Phone: +86 (0519) 8399 3606 Applied Power Microelectronics Co., Ltd. (APM) reserves the right to make changes to the product specification and data in this document without notice. APM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APM assume any liability arising from the application or use of any products or circuits, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Revision, 12/2017 4 of 4