P5103EMA

P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 51mΩ @VGS = -10V -3.8A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS LIMITS Drain-Source Voltage SYMBOL VDS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current TA = 25 °C TA = 70 °C TJ, TSTG Junction & Storage Temperature Range A -3 -20 1 PD TA = 70 °C V -3.8 IDM TA = 25 °C Power Dissipation -30 ID 1 UNITS W 0.7 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 SYMBOL 2 RqJA TYPICAL MAXIMUM UNITS 117 °C / W Limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. REV 1.0 1 2014/4/24 P5103EMA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX -1.8 -3 UNIT STATIC V(BR)DSS VGS = 0V, ID = -250mA -30 VGS(th) VDS = VGS, ID = -250mA -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V , TJ = 70 °C -10 mA Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VGS = -4.5V, ID = -3.5A 65 85 VGS = -10V, ID = -3.8A 41 51 VDS = -5V, ID = -3.8A 7 gfs V mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 85 Qg(VGS=10V) 13.3 Total Gate Charge2 2 Gate-Drain Charge2 VDS = -15V, ID= -3.8A Qgs Qgd Turn-On Delay Time 2 tr Turn-Off Delay Time 2 td(off) 6.9 nC 1.9 22 VDS = -15V ID @ -3.8A, VGS= -10V, RGEN = 6Ω 23 nS 110 tf 58 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Change Qrr trr IF = -3.8A, VGS = 0V IF = -3.8A, dlF/dt = 100A /mS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. REV 1.0 pF 98 3.5 td(on) 2 Fall Time2 VGS = 0V, VDS = -15V, f = 1MHz Qg(VGS=4.5V) Gate-Source Charge Rise Time 562 2 -0.9 A -1.1 V 13.2 nS 6 nC 2014/4/24 P5103EMA P-Channel Enhancement Mode MOSFET REV 1.0 3 2014/4/24 P5103EMA P-Channel Enhancement Mode MOSFET REV 1.0 4 2014/4/24 P5103EMA P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/4/24