HSK0008

HSK0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSK0008 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSK0008 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ VDS 100 V RDS(ON),max 310 mΩ ID 2.2 A SOT89 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 2.2 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 1.7 A IDM Pulsed Drain Current2 5.8 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 85 ℃/W --- 36 ℃/W 1 HSK0008 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Conditions Min. Typ. Max. Unit 100 --- --- V VGS=10V , ID=2A --- 260 310 VGS=4.5V , ID=1A --- 270 320 VGS=0V , ID=250uA m Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 5.4 --- S Qg Total Gate Charge (10V) --- 9.7 --- Qgs Gate-Source Charge --- 1.6 --- Qgd Gate-Drain Charge --- 1.7 --- VDS=80V , VGS=10V , ID=1A nC --- 1.6 --- Rise Time VDD=50V , VGS=10V , RG=3.3 --- 19 --- Turn-Off Delay Time ID=1A --- 13.6 --- Fall Time --- 19 --- Ciss Input Capacitance --- 508 --- Coss Output Capacitance --- 29 --- Crss Reverse Transfer Capacitance --- 16.4 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2.2 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Trr Reverse Recovery Time --- 17 --- nS Qrr Reverse Recovery Charge --- 14 --- nC IF=2A,dI/dt=100A/us, TJ=25℃ \ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSK0008 N-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 2 IS Source Current(A) 1.6 1.2 0.8 TJ=150℃ 0.4 TJ=25℃ 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 2.4 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.6 1 1.2 0.6 0.8 0.2 0.4 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 TJ , Junction Temperature (℃) Ver 2.0 3 HSK0008 N-Ch 100V Fast Switching MOSFETs 1000 100.00 F=1.0MHz Capacitance (pF) Ciss 10.00 100us 1.00 10ms ID (A) 100 100ms 0.10 1s Coss TA=25℃ Single Pulse 10 1 5 9 13 17 21 DC 0.01 Crss 0.00 25 0.1 VDS Drain to Source Voltage (V) Fig.7 Capacitance 1 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSK0008 N-Ch 100V Fast Switching MOSFETs Ordering Information Part Number HSK0008 www.hs-semi.cn Package code SOT-89 Ver 2.0 Packaging 4000/Tape&Reel 5