2SC1623（L6）

2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES  High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA  High voltage:VCEO=50V  Surface Mount device  Complementary to 2SA812 SOT-23 MECHANICAL DATA     Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Collector Power Dissipation IC 100 mA PC 200 mW Thermal Resistance From Junction To Ambient RθJA 625 °C/W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Collector-base breakdown voltage V(BR)CBO 60 V IC=100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA，IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100uA，IC=0 Collector cut-off current ICBO 0.1 uA VCB=60V, IE=0 Emitter cut-off current IEBO hFE 0.1 600 uA VEB=5V, IC=0 VCE=6V, IC=1mA DC current gain 90 200 Collector-emitter saturation voltage VCE(sat) 0.3 V IC=100mA，IB=10mA Base-emitter saturation voltage VBE(sat) 1 V IC=100mA，IB=10mA Transition frequency CLASSIFICATION OF hFE fT 250 MHz VCE=6V, IC=10mA Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 Marking L4 L5 L6 L7 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/4 2SC1623 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Static Characteristic 4 10uA C 8uA COLLECTOR CURRENT I 7uA 6uA 2 5uA 4uA 3uA 1 —— IC Ta =100℃ DC CURRENT GAIN h FE (mA) 9uA 3 h FE 1000 COMMON EMITTER Ta =25℃ Ta =25℃ 100 2uA COMMON VCE = 6V IB=1uA 0 0 2 4 6 10 0.1 8 1 10 100 COLLECTOR CURRENT IC(mA) COLLECTOR-EMITTER VOLTAGE VCE (V) E —— IC 1000 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) Ta =25℃ Ta =100 ℃ β=10 100 0.1 1 10 COLLECTOR CURREMT IC IC Ta =25℃ β=10 1 —— VBE 1 COMMON VCE =6V 0.3 0.6 10 100 COLLECTOR CURREMT IC(mA) fT 1000 0.0 IC Ta =100 ℃ (mA) 10 0.1 —— 100 10 0.1 100 TRANSITION FREQUENCY fT(MHz) COLLECTOR CURRENT IC (mA) 100 VCEsat 300 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) VBEsat 2000 —— IC 100 COMMON VCE =6V Ta =25℃ 0.9 10 1.2 1 10 70 COLLECTOR CURRENT IC(mA) BASE-EMMITER VOLTAGE VB(V) E Cob/Cib —— VCB /VEB 50 a 200 10 C ib 150 COLLECTOR POWER DISSIPATIONPC(mW) C (pF) f=1MHz IE=0/IC=0 Ta =25 ℃ CAPACITANCE P C —— T 250 Cob 1 0.1 0.1 100 50 0 1 REVERSE VOLTAGE V (V) © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 10 20 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 100 Ta 125 150 (℃) 2/4 2SC1623 BIPOLAR TRANSISTOR (NPN) SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 2SC1623 BIPOLAR TRANSISTOR (NPN) SOT-23 Tape and Reel SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Trailer SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4