VS2622AE

VS2622AE 20V/56A N-Channel Advanced Power MOSFET V DS 20 V R DS(on),TYP@ VGS=10V 4.8 mΩ  N-Channel，2.5V logic level control R DS(on),TYP@ VGS=4.5V 5.6 mΩ  Enhancement mode ID 56 A Features  Low on-resistance RDS(on) @ VGS=2.5 V PDFN3333  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant Part ID Package Type Marking VS2622AE PDFN3333 2622AE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 20 V VGS Gate-Source voltage ±12 V IS Diode continuous forward current TA=25°C 56 A TC =25°C 56 A ID Continuous drain current @VGS=4.5V TC =100°C 35 A TC =25°C 220 A TA=25°C 20 A TA=70°C 16 A 33 mJ IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=4.5V ② EAS Avalanche energy, single pulsed PD Maximum power dissipation TC =25°C 29 W PDSM Maximum power dissipation ③ TA=25°C 3.6 W TSTG , TJ Storage and junction temperature range -55 to 150 °C Typical Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 4.3 °C/W R JA Thermal Resistance, Junction-to-Ambient 35 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 www.vgsemi.com VS2622AE 20V/56A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=20V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=20V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 0.4 0.7 1 V RDS(ON) Drain-Source On-State Resistance ④ VGS=10V, ID=15A -- 4.8 6.7 mΩ RDS(ON) Drain-Source On-State Resistance ④ VGS=4.5V, ID=10A -- 5.6 7.8 mΩ RDS(ON) Drain-Source On-State Resistance ④ VGS=2.5V, ID=4A -- 7.7 10.8 mΩ 1040 1290 1540 pF 130 200 270 pF 120 180 240 pF -- 2.5 -- Ω -- 18 -- nC -- 7.5 -- nC -- 8.5 -- nC -- 3.1 -- μs V(BR)DSS IDSS Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V,VGS=0V, f=1MHz f=1MHz VDS=10V,ID=10A, VGS=4.5V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=10A, -- 4.6 -- μs t d(off) Turn-Off Delay Time RG=3Ω, -- 9 -- μs tf Turn-Off Fall Time -- 9.4 -- μs VDD=10V, VGS=4.5V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=10A,VGS=0V -- 0.8 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=10A, -- 13 -- ns Qrr Reverse Recovery Charge -- 17 -- nC VGS=0V di/dt=500A/μs NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH, RG = 25Ω, IAS = 20A, VGS =4.5V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 www.vgsemi.com VS2622AE 20V/56A N-Channel Advanced Power MOSFET VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Normalized Threshold Voltage (Vth) ID, Drain-Source Current (A) Typical Characteristics Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature Tc, Case Temperature (°C) Normalized On Resistance ID, Drain-Source Current (A) Fig2. Maximum Drain Current Vs.Case Temperature Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VS2622AE 20V/56A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Qg - Total Gate Charge (nC) Fig7. Typical Capacitance Vs. Drain-Source Voltage Fig8. Typical Gate Charge Vs. Gate-Source Voltage VSD, Source-Drain Voltage (V) Thermal Resistance) ZqJA Normalized Transient Fig7. Typical Source-Drain Diode Forward Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 www.vgsemi.com VS2622AE 20V/56A N-Channel Advanced Power MOSFET Marking Information Vs 2622AE XXXYWW 1st line： 2nd line： 3rd line： Dot： Vanguard Code（Vs） Part Number（2622AE） Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code，(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW： Week Code (01 to 53) Pin1 identification Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 www.vgsemi.com VS2622AE 20V/56A N-Channel Advanced Power MOSFET PDFN3333 Package Outline Data Symbol DIMENSIONS ( unit : mm ) Min Typ Max A 0.7 0.75 0.8 Notes: b 0.25 0.3 0.35 1. Follow JEDEC MO-240 variation CA. C 0.1 0.15 0.25 2. Dimensions "D1" and "E1" do NOT include mold flash D 3.25 3.35 3.45 protrusions or gate burrs. D1 3 3.1 3.2 3. Dimensions "D1" and "E1" include interterminal flash or D2 1.78 1.88 1.98 protrusion. Interterminal flash or protrusion shall not exceed D3 -- 0.13 -- E 3.2 3.3 3.4 E1 3 3.15 3.2 E2 2.39 2.49 2.59 0.65 BSC e H 0.3 0.39 0.5 L 0.3 0.4 0.5 L1 -- 0.13 -- θ -- 10° 12° M * * 0.15 * Not specified Copyright Vanguard Semiconductor Co., Ltd Rev A – JUN, 2018 0.25mm per side. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com