MXD8512A

MXD8512A 0.5~4.0GHz SPST Antenna Tuning Switch This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch General Description Applications The MXD8512A is a CMOS silicon-on-insulator  GSM/WCDMA/LTE band and mode switching (SOI), single-pole, single-throw (SPST) switch. The  Antenna tuning switch high linearity and ruggedness performance and extremely low insertion loss makes the device an ideal choice for GSM/WCDMA/LTE handset antenna tuning application. The MXD8512A SPST switch is provided in a compact 0.7mm x 1.1mm x 0.377mm 6-lead QFN package. A functional block diagram is shown in Figure 1. The pin configuration and package are Features  Broadband frequency range: 0.1 to 4.0 GHz  Low insertion 0.18dB @ 2.7 GHz  High P0.1dB of 43.5dBm  High Peak Vrf of 50V  Very Low Ron of 1.2 Ohm  Very Low Coff of 130fF  Positive low voltage control: VC = 1.0 to 3.0 shown in Figure 2. Signal pin assignments and V, VDD = 1.7 to 3.3 V, Small, QFN (6-pin, functional pin descriptions are provided in Table 1. 0.7mm x 1.1mm x 0.377mm) package， MSL1 Functional Block Diagram and Pin Function RF2 RF1 Logic and Supply 1 RF1 6 RF2 2 NC 5 GND 3 VDD 4 VC VC GND VDD Figure 1.Functional Block Diagram Figure 2.Pin-out (Top View) Page 2 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch Application Circuit 1 RF1 RF1 4 RF2 RF2 2 NC MXD 8512A 5 GND GND VDD 3 VDD 4 VC C1 100pF VC C2 100pF Figure 3. MXD8512A Application Circuit Table 1. Pin Description Pin No. 1 2 3 4 Name RF1 NC VDD VC Description Pin No. RF port 1 No connect DC power supply DC control voltage Name Description 5 6 GND RF2 Ground RF port 2 Symbol Min Typ Max f1 0.5 1.7 1.0 0 2.8 1.8 0 4.0 3.3 3.0 0.3 Truth Table Table 2. Active Path VC RF1 to RF2 OFF RF1 to RF2 ON 0 1 Note: “1” = 1.0 V to 3.00 V. “0” = –0 V to +0.3 V. Recommended Operation Range Table 3. Parameters Operation Frequency Power supply Switch Control Voltage High Switch Control Voltage Low VDD VCTL_H VCTL_L Units GHz V V V Page 3 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch Specifications Table 4.Electrical Specifications Parameter Symbol DC Specifications Control voltage: Low High Supply voltage Supply current VCTL_L VCTL_H VDD IDD Control current Min. 0 1.0 1.7 ICTL Specification Typical Max. Units Test Condition 0 1.8 2.8 100 0.3 3.0 3.3 150 V V V μA VDD = 2.8 V 1 5 μA VCTL= 1.8 V 0.12 0.18 0.25 0.3 dB dB dB dB dB dB dB dB dB 0.5 to 1.0 GHz 1.0 to 2.2 GHz 2.2 to 3.0 GHz 3.0 to 4.0 GHz 0.5 to 1.0 GHz 1.0 to 2.2 GHz 2.2 to 3.0 GHz 3.0 to 4.0 GHz 0.5 to 4.0 GHz RF Specifications Isolation ISO Return loss On Resistance (RF1/2 to ANT) OFF Capacitance (RF1/2 to ANT) Input 0.1 dB compression point Maximum RF operating voltage |S11| 0.10 0.12 0.18 0.25 28 22 18 17 22 Ron 1.2 1.4 Ω Switch on Path Coff 130 140 fF Switch off Path P0.1dB +43.5 dBm Vmax 50 V LTE TX harmonic (RF1/2 to ANT) 2f0 -110 -95 dBm 3f0 -105 -85 dBm GSM LB harmonic (RF1/2 to ANT) 2f0 -60 -50 dBm 3f0 -60 -50 dBm GSM HB harmonic (RF1/2 to ANT) 2f0 -60 -50 dBm 3f0 -60 -50 dBm IMD2 -115 -105 dBm IMD3 -115 -105 dBm Insertion loss Second order intermodulation Third order intermodulation Switching on time IL 25 20 15 14 5 10 μs Switching off time 5 10 μs Startup time 15 30 μs 0.5 to 4.0 GHz, ANT to RF1 and RF2 f0 = 500 to 4000 MHz, 25% duty cycle f0 = 500 to 4000 MHz, PIN = +26 dBm f0 = 824 to 915 MHz, PIN = +35 dBm f0 = 1710 to 2690 MHz, PIN = +33 dBm CW Carrier on RF Port, +20 dBm CW Interferer on ANT port, -15 dBm CW Carrier on RF Port, +20 dBm CW Interferer on ANT port, -15 dBm 50% VCTL to 90% RF 50% VCTL to 10% RF Power off state to any RF switch state Page 4 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch Table 5. IMD2 Test Conditions Band In-band freq MHz 1 Low 1 High 5 Low 5 High 2140 2140 881.5 881.5 CW Carrier MHz dBm CW Interferer MHz dBm 1950 1950 836.5 836.5 190 4090 45 1718 +20 +20 +20 +20 -15 -15 -15 -15 Table 6. IMD3 Test Conditions In-band freq MHz Band 1 5 2140 881.5 CW Carrier MHz dBm CW Interferer MHz dBm 1950 836.5 1760 791.5 +20 +20 -15 -15 Absolute Maximum Ratings Table 7. Maximum ratings Parameters Symbol Supply voltage Digital control voltage RF input power CW (50 Ohm) Operating temperature Storage temperature Electrostatic Discharge Human body model (HBM), Class 1C Machine Model (MM), Class A Charged device model (CDM), Class III VDD VCTL PIN TOP TSTG Minimum Maximum Units +3.6 +3.3 +40 +90 +150 V V dBm ℃ ℃ 0 -35 -55 ESD_HBM 1000 ESD_MM 100 ESD_CDM 500 V Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Page 5 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch Package Outline Dimension Figure 4. Package outline dimension Page 6 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8512A – 0.5~4.0GHz SPST Antenna Tuning Switch Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 7. Recommended Lead-Free Reflow Profile Table 8. Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.2.1 Page 7 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential