SS545F

山东晶导微电子有限公司 SS545F Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 45V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS545 Simplified outline SMAF and symbol Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS545F Units Maximum Repetitive Peak Reverse Voltage V RRM 45 V Maximum RMS voltage V RMS 32 V Maximum DC Blocking Voltage V DC 45 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A VF 0.55 V IR 1 50 mA Cj 400 pF RθJA 60 °C/W Tj -55 ~ +150 °C T stg -55 ~ +150 °C Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T j = 25°C at Rated DC Reverse Voltage T j =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-S-SS545F-5A45V Page 1 of 3 山东晶导微电子有限公司 SS545F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Case Temperature (°C) 1 0.2 0.4 0.6 1000 500 100 20 10 0.1 0.8 175 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 100 Transient Thermal Impedance（ °C /W） Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 1 1 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 25 100 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 80 T j =25°C 0 Peak Forward Surage Current (A) 60 Fig.4 Typical Junction Capacitance 0.1 Fig.6- Typical Transient Thermal Impedance 100 10 Number of Cycles at 60Hz 2016.01 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 10 T J =75°C 10 2 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS545F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) SS545F Marking code SS545 1.8 (71) 1.6 (63) ∠ mm Unit ： (mil) 2016.01 XTH601156B0 Page 3 of 3