MMBT3904(1AM)

MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 02 MMBT3904 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Current Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Storage Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA Fall Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE 40 70 100 60 30 300 - - ICBO - 50 nA IEBO - 50 nA V(BR)CBO 60 - V V(BR)CEO 40 - V V(BR)EBO 6 - V VCE(sat) VCE(sat) - 0.2 0.3 V V VBE(sat) VBE(sat) 0.65 - 0.85 0.95 V V fT 300 - MHz Cob - 4 pF td - 35 ns tr - 35 ns ts - 200 ns tf - 50 ns SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 02 MMBT3904 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 02