1N5819

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD DO - 41 SCHOTTKY BARRIER DIODES Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere 1N5817-1N5819 DO-41 FEATURES 1.0(25.4) MIN F Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency J High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications High temperature soldering guaranteed:260 C/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and 0.107(2.7) 0.080(2.0) DIA. 0.205(5.20) 0.161(4.10) WEEE 2002/96/EC 1.0(25.4) MIN MECHANICAL DATA 0.034(0.85) 0.028(0.71) DIA. Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Dimensions in inches and (millimeters) Polarity: color band denotes cathode end Mounting Position: Any Weight: 0.012ounce, 0.33 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.) Symbols VRRM VRMS VDC Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375"(9.5mm)lead length at TL=90 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) at TL=70 C Maximum instantaneous forward voltage at 1.0 A(note 1 ) Maximum instantaneous forward voltage at 3.0 A(note 1 ) Maximum instantaneous reverse T A=25 C current at rated DC blocking T A=100 C voltage(Note 1) Typical junction capacitance(Note 3) Typical thermal resistance(Note 2) Operating junction and storage temperature range 1N5817 1N5818 20 14 20 1N5819 Units 30 40 21 28 30 40 Volts Volts Volts I(AV) 1.0 Amp IFSM 25.0 Amps VF VF 0.450 0.750 0.550 0.875 0.5 IR 10.0 CJ R JA R JL TJ 、TSTG Volts Volts mA 110.0 PF 50.0 15.0 C/W -65 to +125 C Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , with 1.5X1.5"(38X38mm)copper pads 3.Measured at 1.0MHz and reverse voltage of 4.0 volts 1 0.600 0.900 RATINGS AND CHARACTERISTIC CURVES 1N5817 THRU 1N5819 FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1 30 0.75 25 PEAK FORWARD SURGE CURRENT(AMPERES) AVERAGE FORWARD CURRENT AMPERES FIG.1-FORWARD CURRENT DERATING CURVE 0.5 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5MM) LEAD LENGTH 0.25 0 0 20 40 60 80 100 120 140 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 20 15 10 5 0 LEAD TEMPERATURE ( C) 1 10 100 NUMBER OF CYCLES AT 60Hz FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS 100 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT( AMPERES) 20 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=125 C 1 TJ=25 C 0.1 10 TJ=125 C 1.0 0.1 TJ=100 C 0.01 0.01 TJ=25 C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE% FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/ W JUNCTION CAPACITANCE(pF) FIG.5-TYPICAL JUNCTION CAPACITANCE 400 TJ=25 C f=1.0MHZ Vsig=50mVp-p 100 10 0.1 1 10 100 100 10 1 0.1 0.01 0.1 1 REVERSE VOLTAGE. VOLTS T, PULSE DURATION ,sec. 2 10 100