BAV103

BAV101~BAV103 Silicon Epitaxial Planar Diodes High Voltage Switching Diodes LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage H C Symbol BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 VRRM E T M E S Continuous Forward Current IF Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current VR IFRM at t = 1 s at t = 100 μs at t = 1 μs Total Power Dissipation IFSM Ptot Junction Temperature Storage Temperature Range Value Unit 120 200 250 100 150 200 250 mA 625 mA V V 1 3 9 400 A mW Tj 175 O Tstg - 65 to + 175 O C Symbol Max. Unit VF 1 1.25 V 100 100 100 100 100 100 nA nA nA µA µA µA C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC at VR = 150 V, Tj = 150 OC at VR = 200 V, Tj = 150 OC BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 IR Diode Capacitance at VR = 0, f = 1 MHz Cd 5 pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr 50 ns SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 BAV101~BAV103 H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009